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    Fujitsu
Part No. MB85RS256A
OCR Text ... mb85rs256a ds501-00007-0v01-e 9 ? read the read command reads fram memory cell array dat a. arbitrary 16 bits address and op-code of read are input to si. the most significant address bit is inva lid. then, 8-cycle clock is input to sck....
Description 256 K (32 K X 8) Bit SPI

File Size 238.77K  /  20 Page

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    PH3230S PH3230S115

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PH3230S PH3230S115
OCR Text ... V ID = 1 mA; VDS = VGS; Figure 9 VDS = 30 V; VGS = 0 V VGS = 20 V; VDS = 0 V VGS = 10 V; ID = 25 A; Figure 7 and 8 VGS = 4.5 V; ID = 25 A; Figure 8 Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr for...
Description N-channel Trenchmos (tm) logic level FET; Package: SOT669 (LFPAK); Container: Tape reel smd 107 A, 30 V, 0.0065 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235AA
N-channel TrenchMOS logic level FET
N-channel TrenchMOS⑩ logic level FET

File Size 87.13K  /  12 Page

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    PH3230

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PH3230
OCR Text ...= 10 V; ID = 25 A; Figure 8 and 9 VGS = 4.5 V; ID = 25 A; Figure 9 Dynamic characteristics gfs Qg(tot) Qgs Qgd Ciss Coss Crss td(on) tr td(off) tf VSD trr forward transconductance total gate charge gate-source charge gate-drain (Miller) cha...
Description N-channel enhancement mode field-effect transistor

File Size 94.11K  /  13 Page

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    Nanya Technology Corpor...
Part No. NT5TU32M16EG-ACI
OCR Text ... nanya technology corp. ? 0 9 /201 4 ...mb sdram ? jedec ddr2 compliant - double - data rate on dq s , dqs , dm bus - 4...
Description DDR2 512Mb SDRAM

File Size 3,336.74K  /  96 Page

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    PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3

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PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Part No. PHD12NQ15T PHP12NQ15T PHB12NQ15T PHB12NQ15T/T3
OCR Text ...Unclamped inductive load, IAS = 9.5 A; tp = 100 s; Tj prior to avalanche = 25C; VDD 25 V; RGS = 50 ; VGS = 10 V; refer to fig:15 MIN. MAX. ...mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDI...
Description N-channel TrenchMOS transistor 12.5 A, 150 V, 0.2 ohm, N-CHANNEL, Si, POWER, MOSFET

File Size 110.51K  /  12 Page

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    MB85RS256A

Fujitsu Component Limited.
Part No. MB85RS256A
OCR Text ... mb85rs256a ds501-00007-0v01-e 9 ? read the read command reads fram memory cell array dat a. arbitrary 16 bits address and op-code of read are input to si. the most significant address bit is inva lid. then, 8-cycle clock is input to sck....
Description Memory FRAM 256 K (32 K x 8) Bit SPI

File Size 221.50K  /  20 Page

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    PHD5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHD5N20E
OCR Text ...te resistance MAX. 200 5.0 60 0.9 UNIT V A W PINNING - SOT428 PIN 1 2 3 tab gate drain source DESCRIPTION PIN CONFIGURATION tab ...mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to amb...
Description PowerMOS transistor

File Size 50.47K  /  7 Page

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    PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. PHD66NQ03LT PHP66NQ03LT PHB66NQ03LT
OCR Text ... 25 A; Tj = 25 C Tmb = 25 C Typ 9.1 12.3 Max 25 66 57 93 175 12 16 Unit V A A W C m m drain-source voltage (DC) drain current (DC) Symbol Pa...mb) Rth(j-a) Thermal characteristics Conditions Figure 4 vertical in still air; SOT78 package mounte...
Description Turret Lug, for 1.6mm panel thickness 66 A, 25 V, 0.0136 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
N-channel TrenchMOS transistor

File Size 112.35K  /  14 Page

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    PHP5N20E

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. PHP5N20E
OCR Text ...te resistance MAX. 200 5.0 60 0.9 UNIT V A W PINNING - TO220AB PIN 1 2 3 tab gate drain source drain DESCRIPTION PIN CONFIGURATION ...mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to amb...
Description PowerMOS transistor

File Size 47.45K  /  7 Page

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