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    BLV103

Philips Semiconductors
Part No. BLV103
OCR Text ... nF in parallel 50 50 50 43 9 mm x 2.4 mm 23 mm x 2.4 mm 16 mm x 2.4 mm 3 mm x 3 mm int. dia. 3 mm; length 5 mm; leads 2 mm x 5 mm 4312 020 36642 int. dia. 4 mm; length 5 mm; leads 2 mm x 5 mm 43 50 10 14.5 mm x 3 mm 4.5 mm x 2.4 mm ...
Description UHF power transistor

File Size 89.32K  /  10 Page

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    BUK7607-55B-15

NXP Semiconductors
Part No. BUK7607-55B-15
OCR Text ...0 300 0246810 v ds (v) i d (a) 9 10 20 v gs = 8.5 (v) 8 7.5 7 6.5 6 5.5 5 4.5 03nn62 0 5 10 15 20 25 5101520 v gs (v) r dson (m ) 03aa35 v gs (v) 06 4 2 10 ?4 10 ?5 10 ?2 10 ?3 10 ?1 i d (a) 10 ?6 min typ max 03nn60 0 20 40 60 0 25 50 7...
Description N-channel TrenchMOS standard level FET

File Size 181.51K  /  14 Page

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    BT258U-800R BT258U-600R BT258U BT258U-500R

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BT258U-800R BT258U-600R BT258U BT258U-500R
OCR Text ...rees a 30 4 60 2.8 90 2.2 120 1.9 180 1.57 BT150 Tmb(max) / C a = 1.57 1.9 109 111 113 115 117 119 121 123 80 70 60 50 40 30 20 ...mb (K/W) BT150 1 2 1.5 1 0.5 0 -50 0.01 10us 0.1ms 1ms 10ms tp / s 0.1s 1s 0.1 P D tp ...
Description Thyristors logic level 8 A, 800 V, SCR, TO-251

File Size 50.55K  /  6 Page

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    BUK220-50Y BUK220-50Y_1

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PHILIPS[Philips Semiconductors]
Part No. BUK220-50Y BUK220-50Y_1
OCR Text ...A; tp = 300 s battery to ground 9 V VBG 16 V VLG = 0 V Tmb = 25C 4 MIN. 50 50 18 20 TYP. 55 55 23 25 MAX. 65 65 28 30 UNIT V V V V 5.5 - 35 V A A A A mA A IB IL IG IL Currents Quiescent current3 Off-state lo...
Description From old datasheet system
TOPFET high side switch SMD version of BUK219-50Y

File Size 38.65K  /  8 Page

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    BUK221-50DY

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK221-50DY
OCR Text ...current VLG = VIG = 0 V; Figure 9 Tmb = 150 C Tmb = 25 C IL(off) off-state load current VBL = VBG; per channel Tmb = 150 C Tmb = 25 C IG(on) IL(nom) Resistance RBLon battery-load on-state resistance 9 VBG 35 V; IL = 4 A; Figure 4 Tmb = 25...
Description Dual channel high-side TOPFET

File Size 90.52K  /  16 Page

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    BUK7213-40A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7213-40A
OCR Text ...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 40 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VGS...
Description TrenchMOS standard level FET
TrenchMOS?? standard level FET
Trenchmos (tm) standard level FET

File Size 103.12K  /  14 Page

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    BUK7227-100B

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7227-100B
OCR Text ...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 185 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C Tj = 185 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VG...
Description TrenchMOS standard level FET

File Size 86.14K  /  12 Page

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    BUK7240-100A

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK7240-100A
OCR Text ...ge ID = 1 mA; VDS = VGS; Figure 9 Tj = 25 C Tj = 175 C Tj = -55 C IDSS drain-source leakage current VDS = 100 V; VGS = 0 V Tj = 25 C Tj = 175 C IGSS RDSon gate-source leakage current drain-source on-state resistance VGS = 20 V; VDS = 0 V VG...
Description TrenchMOS standard level FET
TrenchMOS TM standard level FET
TrenchMOS⑩ standard level FET

File Size 106.46K  /  13 Page

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    BT134-600G-127

NXP Semiconductors
Part No. BT134-600G-127
OCR Text ...(degrees) form factor a 3 0 6 0 9 0 120 180 4 2.8 2.2 1.9 1.57 # # = 1 8 0 120 9 0 6 0 3 0 = conduction angle a = form factor = i t(rm...mb) thermal resistance from junction to mounting base full cycle; fig. 6 - - 3 k/w r th(j-a) therma...
Description Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications

File Size 167.93K  /  13 Page

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    BYV118-25

NXP SEMICONDUCTORS
Part No. BYV118-25
OCR Text ...c 012345 0 1 2 3 4 5 a = 1.57 1.9 2.2 2.8 4 byv116 rs = 0.046 ohms vo = 0.31 v average forward current, if(av) (a) forward dissipation, pf (...mb (k/w) d = t p t p t t p t d march 1998 3 rev 1.000 philips semiconductors product specificatio...
Description 25 V, SILICON, RECTIFIER DIODE, TO-220AB

File Size 42.87K  /  6 Page

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