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				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK553-100A BUK553-100B BUK553-100A/B
OCR Text	...C Tmb = 25 C MIN. - 55 -100A 13 9 52 75 175 175 MAX. 100 100 15 20 -100B 12 8.5 48 UNIT V V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction t...
Description	TRANSISTOR UNIVERSAL MOSFET SOT PowerMOS transistor Logic level FET 12 A, 100 V, 0.22 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	52.23K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK553-48C
OCR Text	... V(CL)DSR / V BUK5Y3-48C Fig.9. Typical transconductance. gfs = f(ID); conditions: VDS = 25 V V(CL)DSR / V 150 25 -55 51 50 49 48 58 56 54 52 BUK5Y3-48C Tmb / degC = 47 50 46 45 44 43 0 2 4 6 ID / A 8 Tmb / degC = 150 ...
Description	PowerMOS transistor Voltage clamped logic level FET
File Size	65.33K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK553-60A BUK553-60B
OCR Text	... SUB-THRESHOLD CONDUCTION 10 9 8 7 6 5 4 3 2 1 0 1E-01 1E-02 2% 98 % 1E-03 typ 1E-04 1E-05 1E-06 0 10 20 ID / A 30 40 0 0.4 0.8 1.2 VGS / V 1.6 2 2.4 Fig.8. Typical transconduct...
Description	PowerMOS transistor Logic level FET
File Size	49.79K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-100 BUK555-100A BUK555-100B BUK555-100A/B
OCR Text	...80 10 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 13 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz April 1...
Description	PowerMOS transistor Logic level FET TRANSISTOR LOGIK MOSFET TO 220
File Size	68.49K / 7 Page	View it Online	Download Datasheet

				PHILIPS[Philips Semiconductors] NXP Semiconductors N.V.
Part No.	BUK555-200 BUK555-200A BUK555-200B
OCR Text	...175 MAX. 200 200 15 20 -200B 13 9.2 52 UNIT V V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. TYP. 60 MAX. 1.2 U...
Description	PowerMOS transistor Logic level FET 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	70.01K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK555-60A BUK555-60B
OCR Text	...80 10 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 20 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz April 1...
Description	PowerMOS transistor Logic level FET 35 A, 60 V, 0.055 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
File Size	51.28K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BUK555-60H
OCR Text	... 1 VDS / V 10 100 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 20 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz August ...
Description	PowerMOS transistor Logic level FET
File Size	64.82K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-200A
OCR Text	... resistance; VGS = 5 V MAX. 200 9.2 90 175 0.4 UNIT V A W C PINNING - SOT404 PIN 1 2 3 mb gate drain source drain DESCRIPTION PIN CONFIGURATION mb SYMBOL d g 2 1 3 s LIMITING VALUES Limiting values in accordance with...
Description	PowerMOS transistor Logic level FET 9.2 A, 200 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	72.99K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
Part No.	BUK564-60H
OCR Text	... 0 20 VDS / V 40 Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 20 A; VGS = 5 V Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz August ...
Description	PowerMOS transistor Logic level FET 39 A, 60 V, 0.042 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	62.01K / 7 Page	View it Online	Download Datasheet

				NXP Semiconductors PHILIPS[Philips Semiconductors]
Part No.	BYM357DX
OCR Text	...VR = VRWM Tj = 100 C TYP 1.05 0.9 1.3 10 100 MAX. 1.25 1.03 1.45 50 350 UNIT V V V A A IR Reverse current. February 2000 2 Re...mb (K/W) 1 1 0.1 0.1 0.01 P D tp D= tp T t 0.01 P D tp D= ...
Description	Damper-Modulator fast, high-voltage
File Size	50.64K / 7 Page	View it Online	Download Datasheet

For 9-mb Found Datasheets File :: 12933 Search Time::9.437ms
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