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  rds Datasheet PDF File

For rds Found Datasheets File :: 33682    Search Time::1.593ms    
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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...ed up to Tjmax G VDSS = 55V rds(on) = 3.3m Description Specifically designed for Automotive applications, this HEXFET(R) Power MOSFET utilizes the latest processing techniques to achieve extremely low onresistance per silicon area. ...
Description AUTOMOTIVE MOSFET

File Size 358.50K  /  12 Page

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ...q q q q q VDSS = 75V G S rds(on) = 0.007 ID = 106AV Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET (R) Power MOSFET utilizes the latest processing techniques to achieve extremely...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ...q q q q q VDSS = 75V G S rds(on) = 0.007 ID = 140AV Description Designed specifically for Automotive applications, this Advanced Planar Stripe HEXFET (R) Power MOSFET utilizes the latest processing techniques to achieve extremely...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF460

SEME-LAB[Seme LAB]
Part No. IRF460
OCR Text ...) 12.70 (0.50) VDSS ID(cont) rds(on) 500V 21A 0.27 29.9 (1.177) 30.4 (1.197) Pin 1 - Gate 16.64 (0.655) 17.15 (0.675) Pin 2 - Source Case - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated) VDSS ...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 16.77K  /  2 Page

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    Analog Power
Part No. AM7102NA
OCR Text ...s 0 0.02 0.04 0.06 0 5 10 15 20 rds(on) - on - resistance( ) id - drain current (a) 3.5v 3v 4v,4.5v,6v,8v,10v 0 5 10 15 20 0 0.2 0.4 0.6 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v,4.5v,4v ...
Description N-Channel 100-V (D-S) MOSFET

File Size 334.75K  /  5 Page

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    Analog Power
Part No. AM4990NE
OCR Text ...0.08 0.1 0.12 0.14 0 2 4 6 8 10 rds(on) - on - resistance ( ) id - drain current (a) 4.0v 3.5v 4.5v 6v,8v,10v 0 1 2 3 4 5 6 7 8 9 10 0 0.5 1 1.5 2 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,...
Description Dual N-Channel 100-V (D-S) MOSFET

File Size 296.17K  /  5 Page

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    TDA7703RTR

STMicroelectronics
Part No. TDA7703RTR
OCR Text ... high performance pll for fast rds system am/fm mixers with hi gh image rejection integrated am-lna and am-pindiode automatic self alignmen t for image rejection digital if signal processing, high performance and drift-free integrat...
Description Highly integrated tuner

File Size 208.01K  /  32 Page

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    2SK3692-01

Fuji Electric
Part No. 2SK3692-01
OCR Text ...2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 rds(on) [ ? ] id [a] typical drain-source on-state resistance rds(on)=f(id):80 s pulse test,tch=25 c 10v 20v 8v 7.5v 7.0v vgs=6.5v -50 -25 0 25 50 75 100 125 150 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0....
Description N-CHANNEL SILICON POWER MOSFET

File Size 103.94K  /  4 Page

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    IRF530A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF530A
OCR Text ...10 A (Max.) @ VDS = 100V Lower rds(ON) : 0.092 (Typ.) IRF530A BVDSS = 100 V rds(on) = 0.11 ID = 14 A TO-220 1 2 3 1.Gate 2. Drain 3. Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL...
Description N-CHANNEL POWER MOSFET
Advanced Power MOSFET

File Size 253.11K  /  7 Page

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    New Jersey Semi-Conductor Products, Inc.
Part No. MTP3055E
OCR Text ... mosfet type mtp3055e vdss 60 v rds(on) < 0.15 a id 12 a typical rds(on) = 0.1 q avalanche rugged technology 100% avalanche tested 175c operating temperature application oriented characterization applications high current, high speed switch...
Description N-CHANNEL 60V-0.1Q-12A TO-220 STripFET MOSFET

File Size 111.92K  /  3 Page

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