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  rds Datasheet PDF File

For rds Found Datasheets File :: 33712    Search Time::1.859ms    
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    IRF9240 IRF9240-SMD

TT electronics Semelab Limited
International Rectifier
SEME-LAB[Seme LAB]
Part No. IRF9240 IRF9240-SMD
OCR Text ... VGS = 0V , Tcase = 125C ID(ON) rds(ON) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS On State Drain Current 1 Static Drain - Source On-State Resistance Forward Transconductance 1 Input capacitance Output capacitance Reverse tran...
Description CAP CER 250VAC 150PF X7R 1808
P-CHANNEL POWER MOSFET

File Size 25.33K  /  2 Page

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    IRF9410

International Rectifier
Part No. IRF9410
OCR Text ...SS = 30V 3 6 4 5 rds(on) = 0.030 T o p V ie w Recommended upgrade: IRF7403 or IRF7413 Lower profile/smaller equivalent: IRF7603 Description Fifth Generation HEXFETs from International Rectifier utilize advanced proces...
Description Power MOSFET(Vdss=30V, rds(on)=0.030ohm)

File Size 103.18K  /  7 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ...ption l l D VDSS = -100V rds(on) = 0.48 G ID = -6.8A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, comb...
Description Power MOSFET(Vdss=-100V/ rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ...ed D VDSS = -100V G S rds(on) = 0.48 ID = -6.8A Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, co...
Description Power MOSFET(Vdss=-100V rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9520 FN2281

INTERSIL[Intersil Corporation]
Part No. IRF9520 FN2281
OCR Text ...7501. Features * 6A, 100V * rds(ON) = 0.600 * Single Pulse Avalanche Energy Rated * SOA is Power Dissipation Limited * Nanosecond Switching Speeds * Linear Transfer Characteristics * High Input Impedance Symbol D Ordering Informa...
Description 6A, 100V, 0.600 Ohm, P-Channel Power MOSFET(6A, 100V, 0.600 惟, P娌?????MOS?烘?搴??)
From old datasheet system
6A 100V 0.600 Ohm P-Channel Power MOSFET
6A/ 100V/ 0.600 Ohm/ P-Channel Power MOSFET

File Size 57.36K  /  7 Page

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    TEF7018HN TEF7016HN

NXP Semiconductors
Part No. TEF7018HN TEF7016HN
OCR Text ...rds such as radio data s ystem (rds), radio broadcast data system (rbds), traffic message channel (tmc), darc (vics and rtic) and optional support of digital radio via a co-processor (hd radio and drm). the devices are following the indus...
Description Scalable advanced background receiver

File Size 120.13K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ...ption l l D VDSS = -100V rds(on) = 0.20 G ID = -14A S Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combi...
Description Power MOSFET(Vdss=-100V/ rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ...nche Rated D VDSS = -100V rds(on) = 0.20 G ID = -14A S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This b...
Description Power MOSFET(Vdss=-100V, rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    Analog Power
Part No. AM7151P
OCR Text ...0.6 0.65 0.7 0.75 0.8 0 1 2 3 4 rds(on) - on - resistance( ) id - drain current (a) 4.0v 3.5v 6v,8v,10v 4.5v 0 0.5 1 1.5 2 2.5 3 3.5 4 0 1 2 3 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v ...
Description P-Channel 150-V (D-S) MOSFET

File Size 270.10K  /  5 Page

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