PART |
Description |
Maker |
IS42VM32400G-75BI IS42VM32400G-75BLI IS42SM32400G- |
1M x 32Bits x 4Banks Mobile Synchronous DRAM All pins are compatible with LVCMOS interface
|
Integrated Silicon Solu...
|
IS46LR32200B |
512K x 32Bits x 4Banks Mobile DDR SDRAM
|
Integrated Silicon Solu...
|
IS45SM32400H-6BLA1 |
1M x 32Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
IS42SM32200G |
512K x 32Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
HMC550 HT6740 HYB25S1G800TCL-37 HFV6 HY5V22LF-P HY |
GAAS MMIC SPST FAILSAFE SWITCH, DC - 6 GHz 13.56MHz RFID Transponder MEMORY SPECTRUM AUTOMOTIVE RELAY 4 Banks x 1M x 32Bit Synchronous DRAM 4Banks x 2M x 32bits Synchronous DRAM 3.3 VOLT HIGH-DENSITY SUPERSYNC II36-BIT FIFO
|
美国讯泰微波有限公司上海代表 Holtek Semiconductor Inc. Infineon Technologies AG 厦门宏发电声股份有限公司 Hynix Semiconductor Inc. Integrated Device Technology, Inc.
|
TCS59SM804BFTL-80 TCS59SM808BFTL-80 TCS59SM808BFT- |
8M×4Banks×8Bits Synchronous DRAM(4M×8位同步动态RAM) 8M×4Banks×8Bits Synchronous DRAM(48M×8位同步动态RAM) 4M×4Banks×16Bits Synchronous DRAM(44M×16位同步动态RAM) 4米4Banks × 16位同步DRAM米16位同步动态RAM)的 16M×4Banks×4Bits Synchronous DRAM(46M×4位同步动态RAM) 1,600 × 4Banks × 4Bits同步DRAM4,600 × 4位同步动态RAM)的
|
Toshiba Corporation Toshiba, Corp.
|
W9812G2GB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
W9812G2IB |
1M x 4 BANKS x 32BITS SDRAM
|
Winbond
|
W9864G2IH |
512K × 4 BANKS × 32BITS SDRAM
|
Winbond
|
RMS132UAW-10E RMS132UAW-6E RMS132UAW-75E RMS132UAW |
512K x 32Bits x 2Banks Low Power Synchronous DRAM
|
Emerging Memory & Logic Solutions Inc
|
W9864G2GH-6I W9864G2GH-6C |
512K X 4 BANKS X 32BITS SDRAM 2M X 32 SYNCHRONOUS DRAM, 5 ns, PDSO86
|
Winbond Electronics, Corp.
|
HYE18L512320BF-7.5 HYB18L512320BF-7.5 |
DRAMs for Mobile Applications 512-Mbit SDR Mobile-RAM
|
http:// Qimonda AG
|