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Samsung Electronic
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| Part No. |
M464S0424FTS
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| OCR Text |
...s of four cmos 4m x 16 bit with 4banks synchronous drams in tsop-ii 400mil package and a 2k eeprom in 8-pin tssop package on a 144-pin glass- epoxy substrate. three 0.1uf decoupling capacitors are mounted on the printed circuit board in par... |
| Description |
4Mx64 SDRAM SODIMM based on 4Mx16, 4banks, 4K Refresh, 3.3V Synchronous DRAMs with SPD Data Sheet
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| File Size |
83.86K /
11 Page |
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Hynix Semiconductor, Inc.
Hynix Semiconductor Inc.
HYNIX[Hynix Semiconductor]
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| Part No. |
HY57V641620HGT-6I HY57V641620HGT-7I HY57V641620HGT-55I HY57V641620HGT-5I HY57V641620HGT-HI HY57V641620HGLT-HI HY57V641620HG-I HY57V641620HGLT-5I HY57V641620HGLT-8I HY57V641620HGLT-PI HY57V641620HGLT-SI HY57V641620HGT-8I HY57V641620HGT-KI HY57V641620HGT-PI HY57V641620HGLT-KI HY57V641620HGT-SI HY57V641620HGLT-55I HY57V641620HGLT-7I HY57V641620HGT HY57V641620HGTP-7I HY57V641620HGTP-8I
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| OCR Text |
.... HY57V641620HG is organized as 4banks of 1,048,576x16. HY57V641620HG is offering fully synchronous operation referenced to a positive edge of the clock. All inputs and outputs are synchronized with the rising edge of the clock input. The d... |
| Description |
SDRAM - 64Mb
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 6 ns, PDSO54
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 5 ns, PDSO54
x16 SDRAM x16内存
4 Banks x 1M x 16Bit Synchronous DRAM 4M X 16 SYNCHRONOUS DRAM, 4.5 ns, PDSO54
CAP 0.01UF 50V 10% X7R SMD-0805 TR-13 PLATED-NI/SN
Ceramic Multilayer Capacitor; Capacitance:10000pF; Capacitance Tolerance: /- 10 %; Working Voltage, DC:50V; Dielectric Characteristic:X7R; Package/Case:0805; Series:MLCC; Dielectric Material:Ceramic; Leaded Process Compatible:Yes
CAP SMD 0805 .01UF 50V 5%
CONNECTOR ACCESSORY
From old datasheet system
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| File Size |
142.41K /
12 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5PS12821F-Y6
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| OCR Text |
...s 128mx4 organization 32m x 4 x 4banks row address a0 - a13 column address a0-a9, a11 bank address ba0, ba1 auto precharge flag a10 refresh 8k
rev. 0.6 / apr.2003 ... |
| Description |
64M X 8 DDR DRAM, PBGA60
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| File Size |
885.74K /
67 Page |
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it Online |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-L
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| OCR Text |
...x8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k
rev. 1.1 /june. 2006 ... |
| Description |
16M X 16 DDR DRAM, 0.75 ns, PDSO66
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| File Size |
235.08K /
29 Page |
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HYNIX SEMICONDUCTOR INC
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| Part No. |
HY5DU561622ELTP-JI
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| OCR Text |
...x8 16mx16 organization 8m x 8 x 4banks 4m x 16 x 4banks row address a0 - a12 a0 - a12 column address a0-a9 a0-a8 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50 49 ... |
| Description |
16M X 16 DDR DRAM, 0.7 ns, PDSO66
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| File Size |
235.26K /
29 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
M464S3323BN0-C1H/L1H M464S3323BN0-C1L/L1L
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| OCR Text |
...f sixteen cmos 16m x 8 bit with 4banks synchronous drams in stsop2 package and a 2k eeprom in 8-pin tssop package on a 144-pin glass-epoxy substrate. two 0.1uf decoupling capacitors are mounted on the printed circuit board in parallel for e... |
| Description |
144pin SDRAM SODIMM 144Pin支持内存的SODIMM
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| File Size |
82.96K /
9 Page |
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Hynix Semiconductor Inc.
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| Part No. |
HY5DU56422BT-D4 HY5DU56422BT-D4/D43 HY5DU56822BT-D4/D43
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| OCR Text |
...x4 32mx8 organization 16m x 4 x 4banks 8m x 8 x 4banks row address a0 - a12 a0 - a12 column address a0-a9, a11 a0-a9 bank address ba0, ba1 ba0, ba1 auto precharge flag a10 a10 refresh 8k 8k 66 65 64 63 62 61 60 59 58 57 56 55 54 53 52 51 50... |
| Description |
256M-P DDR SDRAM
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| File Size |
228.53K /
32 Page |
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it Online |
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