| PART |
Description |
Maker |
| HY5W2B6DLF-HE HY5W2B6DLFP-HE |
4Banks x 2M x 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS45SMVM16800H IS42RMVM16800H |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16320D |
8M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16800H-6BLI IS42VM16800H-75BI IS42VM16800H-7 |
2M x 16Bits x 4Banks Mobile Synchronous DRAM
|
Integrated Silicon Solu...
|
| IS42VM16400G |
1M x 16Bits x 4Banks Low Power Synchronous DRAM
|
Integrated Silicon Solution, Inc
|
| HY57V281620HCST-6I HY57V281620HCST-KI HY57V281620H |
128Mbit (4 banks x 2M x 16bits) synchronous DRAM, LVTTL, 166MHz
4 Banks x 2M x 16bits Synchronous DRAM
|
HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
|
| TCS59S6408CFTL-80 TCS59S6408CFT-80 TCS59S6408CFTL- |
2M×4Banks×8Bits Synchronous DRAM(2M×8位同步动态RAM) 200万4Banks × 8位同步DRAM00万8位同步动态RAM）的
4M?4Banks?4Bits Synchronous DRAM(4缁?M?4浣??姝ュ???AM)
|
Toshiba Corporation
Toshiba, Corp.
|
| TC58DAM72A1FT00 TC58DVM72A1F |
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM 128兆位6米x 8 BITS/8M x 16位）的CMOS NAND型E2PROM
(TC58DxM72) 128-MBIT (16M x 8 BITS/8M x 16BITS) CMOS NAND E2PROM
|
Toshiba Semiconductor
Toshiba, Corp.
|
| HY5V26CF |
(HY5V26CxF) 4 Banks X 2M X 16bits Synchronous DRAM
|
Hynix Semiconductor
|
| IS42S16100 |
512K Words x 16Bits x 2 Banks Synchronous Dynamic RAM
|
Integrated Silicon Solution Inc
|
| HY62SF16404E |
High speed, super low power and 4M bit full CMOS SRAM organized as 256K words by 16bits
|
HYNIX
|
