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For w 4w Found Datasheets File :: 2928 Search Time::1.453ms
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				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	...tic Gain (VDD = 26 V, POUT = 3 w, IDQ = 155 mA, f = 1.93, 1.99 GHz) Power Output at 1 dB Compression (VDD = 26 V, IDQ = 155 mA, f = 1.99 GH...4w Digi-Key 220QBK-ND TMM4, .030" Dielectric Thickness, 2 oz. copper, er = 4.5, Rogers Assembly D...
Description	12 watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10137
OCR Text	...0 mA f = 960 MHz Output Power (w) 40 A-1 234 101 37 5 699 42 5 20 0 0.0 0.2 0.4 0.6 0 Input Power (watts) ...4w N/A 4 Turn, 20 AwG, .120 I.D. .028" Dielectric Thickness, er = 4.0, AlliedSignal, G200, 2 oz. cop...
Description	12 watts, 1.0 GHz GOLDMOS Field Effect Transistor 12瓦，1.0 GHz的GOLDMOS场效应晶体管 12 watts 1.0 GHz GOLDMOS Field Effect Transistor
File Size	174.57K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10139
OCR Text	...wer Gain (VDD = 28 V, POUT = 60 w, IDQ = 500 mA, f = 960 MHz) Power Output at 1 dB Compression (VDD = 28 V, IDQ = 500 mA, f = 960 MHz) Drain...4w Digi-key 220qbk-no .031" thick, er = 4.0, 2 Oz Copper, G200,Allied Signal l1 l2 l3 l4 l4 l4 l5...
Description	60 watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
File Size	114.14K / 6 Page	View it Online	Download Datasheet

				Sanyo Electric Co., Ltd. SANYO[Sanyo Semicon Device]
Part No.	STK4122 STK4122II
OCR Text	... 150 125 -30 to +125 2 Unit V C/w C C C s Recommended Operating Conditions at Ta = 25C Parameter Recommended supply voltage Load resista...4w max. at load resistance 8 and 31.2w max. at load resistance 4 (simultaneous drive of 2 channels) ...
Description	AF Power Amplifier (Split Power Supply) (15w 15w min, THD = 0.4%) 自动对焦功率放大器（斯普利特电源）（安永安永分钟，总谐波失真\u003d 0.4％）
File Size	210.34K / 8 Page	View it Online	Download Datasheet

				TELCOM[TelCom Semiconductor, Inc]
Part No.	TC4422CPA TC4422EPA TC4421 TC4421EPA TC4421CAT TC4421CPA TC4421MJA TC4422 TC4422MJA TC4422CAT
OCR Text	.............................. 10C/w Storage Temperature ............................ - 65C to +150C Operating Temperature (Chip) ................................ 150C Operating Temperature (Ambient) C Version ....................................
Description	(TC4421 / TC4422) 9A HIGH-SPEED MOSFET DRIVERS
File Size	74.65K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	TDA8190 -TDA8190
OCR Text	...01.TBL 8190-02.TBL Unit V w w C THERMAL DATA Symbol R th j-pins R th j-amb Parameter Thermal Resistance Junction-pins Thermal Resi...4w of power into a 16 load with 24V of supply voltage. The power output stage is a class B type. - P...
Description	TV SOUND CHANNEL wITH DC CONTROLS
File Size	181.90K / 11 Page	View it Online	Download Datasheet

				ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
Part No.	TDA8191
OCR Text	....3 1 - 40 to 150 Unit V VPP A A w w C THERMAL DATA Rth (j-pins) R th (j-a) Junction-pins Thermal Resistance Junction-ambient Thermal Resistance Max Max 14 80 C/w C/w 8191-02.TBL 8191-03.TBL Symbol Parameter Value Unit EL...
Description	TV SOUND CHANNEL
File Size	132.94K / 6 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics] ST Microelectronics
Part No.	TEA2037 TEA2037A 1268 -TEA2037A
OCR Text	...yp. Max. Value 15 45 120 Unit C/w o C/w o o C ELECTRICAL CHARACTERISTICS (Tamb = 25oC) Symbol SUPPLY (shunt regulator) (Pin 16) 9.8 ...4w (heatsink required) * Adjustments : * Vertical amplitude * Vertical Linearity * Vertical frequenc...
Description	From old datasheet system HORIZONTAL AND VERTICAL DEFLECTION MONITOR
File Size	92.79K / 9 Page	View it Online	Download Datasheet

For w 4w Found Datasheets File :: 2928 Search Time::1.453ms
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