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  vdmos Datasheet PDF File

For vdmos Found Datasheets File :: 706    Search Time::4.64ms    
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    LK702

POLYFET[Polyfet RF Devices]
Part No. LK702
OCR Text vdmos and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedbac...
Description SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

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    SK702

POLYFET[Polyfet RF Devices]
Part No. SK702
OCR Text vdmos and LDMOS transistors designed specifically for broadband RF applications. Suitable for Militry Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. "Polyfet" process features low feedbac...
Description    SILICON GATE ENHANCEMENT MODE RF POWER vdmos TRANSISTOR

File Size 34.81K  /  2 Page

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    INTERSIL[Intersil Corporation]
Part No. FRF9150H FRF9150R FRF9150D FN3243
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ...
Description 23A/ -100V/ 0.140 Ohm/ Rad Hard/ P-Channel Power MOSFETs
23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 48.36K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. FRK9150H FRK9150R FRK9150D FN3266
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ...
Description 26A/ -100V/ 0.125 Ohm/ Rad Hard/ P-Channel Power MOSFETs
26A, -100V, 0.125 Ohm, Rad Hard, P-Channel Power MOSFETs
From old datasheet system

File Size 47.84K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. FRL234R FN3229 FRL234D FRL234H
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ...
Description 4A/ 250V/ 0.700 Ohm/ Rad Hard/ N-Channel Power MOSFETs
4A, 250V, 0.700 Ohm, Rad Hard, N-Channel Power MOSFETs
From old datasheet system

File Size 47.20K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. FRM450H FRM450D FN3236 FRM450R
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to exhibit minimal characteristic changes to total dose (GAMMA) and neutron (no) exposures. Design and processing efforts are also directed to enhance ...
Description 10A, 500V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFETs
10A/ 500V/ 0.600 Ohm/ Rad Hard/ N-Channel Power MOSFETs
From old datasheet system

File Size 47.16K  /  6 Page

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    INTERSIL[Intersil Corporation]
Part No. FSF9150R FSF9150D FN4089 FSF9150R4 FSF9150D1 FSF9150D3 FSF9150R1 FSF9150R3
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte...
Description 22A/ -100V/ 0.140 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs
22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs
From old datasheet system

File Size 44.38K  /  8 Page

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    INTERSIL[Intersil Corporation]
Intersil, Corp.
Part No. FSL234R FSL234D FN4030 FSL234R4 FSL234D1 FSL234D3 FSL234R1 FSL234R3
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte...
Description    4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs
4A/ 250V/ 0.610 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs
From old datasheet system
4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs 4 A, 250 V, 0.61 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-205AF

File Size 45.36K  /  8 Page

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    FSPL234F FSPL234R FN4881 FSPL234R4

Intersil Corporation
Part No. FSPL234F FSPL234R FN4881 FSPL234R4
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specifically designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching conve...
Description Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs(抗辐射N沟道MOS场效应管)
TRANSISTOR | MOSFET | N-CHANNEL | 250V V(BR)DSS | 7A I(D) | TO-205AF
From old datasheet system

File Size 81.68K  /  8 Page

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    INTERSIL[Intersil Corporation]
Part No. FSYA9150R FSYA9150D FN4582 FSYA9150R4 FSYA9150D1 FSYA9150D3 FSYA9150R1 FSYA9150R3
OCR Text ...ransistor of the vertical DMOS (vdmos) structure. It is specially designed and processed to be radiation tolerant. The MOSFET is well suited for applications exposed to radiation environments such as switching regulation, switching converte...
Description Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs
Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
From old datasheet system

File Size 55.68K  /  8 Page

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For vdmos Found Datasheets File :: 706    Search Time::4.64ms    
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