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  vcesat Datasheet PDF File

For vcesat Found Datasheets File :: 8493    Search Time::1.015ms    
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    BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 BCX78 BCX79 BCX78-IX BCX78-VII BCX78-VIII BCX78-X Q62702-C626 Q62702-C

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCX79-IX BCX79-VII BCX79-VIII BCX79-X Q62702-C718 BCX78 BCX79 BCX78-IX BCX78-VII BCX78-VIII BCX78-X Q62702-C626 Q62702-C627 Q62702-C628 Q62702-C629 Q62702-C630 Q62702-C631 Q62702-C632 Q62702-C633 Q62702-C717
OCR Text ...= 5 V IC = 100 mA, VCE = 1 V 1) vcesat VBEsat VBE(on) - 0.55 - 0.52 0.65 0.93 - 0.75 - - - - - 0.6 1.0 V Values typ. max. Unit 1) Pulse test: t 300 s, D 2 %. Semiconductor Group 4 BCX 78 BCX 79 Electrical Characteristics...
Description From old datasheet system
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 32 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
RES,SMC,681,0HM,1/4W/1%,1 100 mA, 45 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92
PNP Silicon AF Transistors (High current gain Low collector-emitter saturation voltage) 自动对焦进步党硅晶体管(高电流增益低集电极发射极饱和电压

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    DO1608-103 DO1608-223 DO1608-472 CD43-100 LT1945 LT1945EMS LQH3C100 CDRH4D18-100 CDRH4D18-4R7 LQH3C220 LQH3C4R7 CD43-4R7

Linear Technology, Corp.
Linear Technology Corporation
LINER[Linear Technology]
Part No. DO1608-103 DO1608-223 DO1608-472 CD43-100 LT1945 LT1945EMS LQH3C100 CDRH4D18-100 CDRH4D18-4R7 LQH3C220 LQH3C4R7 CD43-4R7
OCR Text ...tes with VIN as Low as 1.2V Low vcesat Switch: 250mV at 300mA Uses Small Surface Mount Components High Output Voltage: Up to 34V Tiny 10-Pin MSOP Package APPLICATIO S s s s s Small TFT LCD Panels Handheld Computers Battery Backup Dig...
Description Dual Micropower DC/DC Converter with Positive and Negative Outputs 双微功率DC / DC变换器的正,负输
CONNECTOR ACCESSORY 连接器附
Dual 250mA Micropower DC/DC Converter

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    LPT80 LPT80A Q68000-A7852

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. LPT80 LPT80A Q68000-A7852
OCR Text ... > 0.25 3.2 10 s tr, tf vcesat 150 mV Semiconductor Group 3 1998-11-16 LPT 80 A Relative spectral sensitivity Srel = f () 100 OHF01420 Photocurrent IPCE = f (Ee) , VCE = 5 V PCE 10 1 mA OHFD1422 Tota...
Description CAP CER DISC 82PF 3KV SL 5% RAD
NPN-Silizium-Fototransistor Silicon NPN Phototransistor
From old datasheet system

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    LT1307B LT1307BCMS8 LT1307BCS8 LT1307BIS8 LT1307CMS8 LT1307CN8 LT1307CS8 LT1307IS8 13077BF LT1307

LINER[Linear Technology]
Part No. LT1307B LT1307BCMS8 LT1307BCS8 LT1307BIS8 LT1307CMS8 LT1307CN8 LT1307CS8 LT1307IS8 13077BF LT1307
OCR Text ...ing at Light Load (LT1307B) Low vcesat Switch: 295mV at 500mA APPLICATIONS s s s s s s s Pagers Cordless Telephones GPS Receivers Battery Backup Portable Electronic Equipment Glucose Meters Diagnostic Medical Instrumentation TYPIC...
Description From old datasheet system
Single Cell Micropower 600kHz PWM DC/DC Converters

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    MCA230 MCA231 MCA255

Siemens Group
Infineon
Siemens Semiconductor Group
Part No. MCA230 MCA231 MCA255
OCR Text ...O MCA230/231 MCA55 ICEO Package vcesat 0.8 1.0 1.0 1.0 1.2 V V V V V ICE=2 mA, IF=16 mA IC=IF=50 mA IC=2 mA, IF=1 mA IC=10 mA, IF=5 mA IC=50 mA, IF=10 mA 30 30 7 30 55 100 V V V V V nA IC=100 A, IF=0 mA IC=100 A, IF=0 mA IE=10 A, IF=0 mA IC...
Description From old datasheet system
PHOTODARLINGTON OPTOCOUPLER

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    Q62702-P1673 SFH310-3 SFH310FA Q62702-P874 SFH310FA-3 SFH310 SFH310-2 SFH310FA-2

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-P1673 SFH310-3 SFH310FA Q62702-P874 SFH310FA-3 SFH310 SFH310-2 SFH310FA-2
OCR Text ... 8 1.6 8.6 12 mA mA s vcesat 150 150 150 150 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () Semi...
Description Neu: NPN-Silizium-Fototransistor New: Silicon NPN Phototransistor
From old datasheet system

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    Q62702-P174 SFH309-3 SFH309-4 SFH309-5 SFH309-6 Q62702-P180 Q62702-P941 Q62702-P1000 SFH309 SFH309FA-5 Q62702-P176 Q6270

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. Q62702-P174 SFH309-3 SFH309-4 SFH309-5 SFH309-6 Q62702-P180 Q62702-P941 Q62702-P1000 SFH309 SFH309FA-5 Q62702-P176 Q62702-P178 Q62702-P859 Q62702-P997 Q62702-P998 Q62702-P999 SFH309F SFH309F-2 SFH309F-3 SFH309F-4 SFH309F-5 SFH309FA SFH309FA-2 SFH309FA-3 SFH309FA-4 SIEMENSAG-Q62702-P999
OCR Text ...1.5 4.5 7.2 mA 2.8 5 6 7 8 s vcesat 200 200 200 200 mV IPCEmin ist der minimale Fotostrom der jeweiligen Gruppe IPCEmin is the min. photocurrent of the specified group Directional characteristics Srel = f () Semic...
Description NPN-Silizium-Fototransistor Silicon NPN Phototransistor Silizium - Fototransistor硅npn型光电晶体管
From old datasheet system

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    BCP54-10 BCP54BCP56 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2125 Q62702-C2123 BCP54 BCP56 BCP56-10 BCP55 Q62702-C

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Siemens Semiconductor G...
Part No. BCP54-10 BCP54BCP56 Q62702-C2120 Q62702-C2148 Q62702-C2122 Q62702-C2125 Q62702-C2123 BCP54 BCP56 BCP56-10 BCP55 Q62702-C2149 BCP54-16 BCP55-10 BCP55-16 BCP56-16 Q62702-C2106 Q62702-C2117 Q62702-C2119
OCR Text ...B0 - - IEB0 hFE 25 40 63 100 25 vcesat VBE - - - - 100 160 - - - - 250 160 250 - 0.5 1 V - - - - 100 20 10 nA A A Values typ. max. Unit V - - - - - - - - - - - - - - 5 - 1) Pulse test conditions: t 300 s, D = 2 %. ...
Description    NPN Silicon AF Transistors (For AF driver and output stages High collector current)
NPN Silicon AF Transistors (For AF driver and output stages High collector current) NPN硅晶体管自动对焦(为自动驱动器和输出级高集电极电流)
NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1000 mA, 80 V, NPN, Si, SMALL SIGNAL TRANSISTOR
From old datasheet system

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    BCP54M BCP54MBCP56M BCP55M BCP56M Q62702-C2595 Q62702-C2607 Q62702-C2606

Siemens Semiconductor G...
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BCP54M BCP54MBCP56M BCP55M BCP56M Q62702-C2595 Q62702-C2607 Q62702-C2606
OCR Text ...(BR)EBO I CBO I CBO hFE hFE hFE vcesat VBE(ON) 5 25 40 25 - I E = 10 A, I C = 0 Collector cutoff current nA A V VCB = 30 V, I E = 0 Collector cutoff current VCB = 30 V, I E = 0 , TA = 150 C DC current gain 1) I C = 5 mA, V...
Description    NPN Silicon AF Transistors (For AF driver and output stages High collector current)
From old datasheet system
NPN Silicon AF Transistors (For AF driver and output stages High collector current) 1 mA, 45 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 BCP56 BCP55 BCP56-16/T1

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Microchip Technology, Inc.
Part No. BCP54 BCP54-16 BCP56-10 BCP56-16 BCP55-10 BCP55-16 BCP56 BCP55 BCP56-16/T1
OCR Text ...0; 56-10 BCP54-16; 55-16; 56-16 vcesat VBE fT h FE1 ----------h FE2 collector-emitter saturation voltage base-emitter voltage transition frequency DC current gain ratio of the complementary pairs IC = 0.5 A; IB = 50 mA IC = 0.5 A; VCE = 2 V...
Description    NPN medium power transistors
TRANSISTOR MEDIUM POWER 晶体管中功率

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For vcesat Found Datasheets File :: 8493    Search Time::1.015ms    
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