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Hanbit Electronics Co.,Ltd.
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| Part No. |
HCPMEM-512
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| OCR Text |
...me is controlled exclusively by tcac . Operation with the tRAD (max) limit insures that tRAC (max) can be met, tRAD (max) is specified as a reference point only; if tRAD is greater than the specified tRAD (max) limit, then access time is co... |
| Description |
EDO DRAM Board 512Mbyte ( 32M x 144-Bit ) organized as 4Banks of 8Mx144, 4K Ref., 3.3V, ECC EDO公司的DRAM局512Mbyte2M的144位）筹办8Mx144K的参Banks。，3.3伏，环境保护运动委员
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| File Size |
811.68K /
21 Page |
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it Online |
Download Datasheet
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Fujitsu Limited
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| Part No. |
MB81V4400C-60 MB81V4400C-70
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| OCR Text |
... when tRCD (max.) is satisfied. tcac : from the falling edge of CAS when tRCD is greater than tRCD (max.). tAA : from column address input when tRAD is greater than tRAD (max.). tOEA : from the falling edge of OE when OE is brought Low afte... |
| Description |
CMOS 1M x 4 Bit Fast Page Mode Dynamic RAM(CMOS 1M x 4位快速页模式动态RAM)
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| File Size |
302.15K /
26 Page |
View
it Online |
Download Datasheet |
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Fujitsu Limited
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| Part No. |
MB814400C-60 MB814400C-70
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| OCR Text |
... when tRCD (max.) is satisfied. tcac : from the falling edge of CAS when tRCD is greater than tRCD (max.). tAA : from column address input when tRAD is greater than tRAD (max.). tOEA : from the falling edge of OE when OE is brought Low afte... |
| Description |
CMOS 1 M ×4BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
CMOS 1 M ×4 BIT
Fast Page Mode DRAM(CMOS 1 M ×4 位快速页面存取模式动态RAM)
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| File Size |
327.16K /
27 Page |
View
it Online |
Download Datasheet |
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