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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67060-S7216-A001 BTS3118N
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| OCR Text |
...nel vertical power FET in Smart SIPMOS protection functions.
M Drain Pin 2 and 4 (TAB)
2004-02-02
BTS 3118 N Maximum Ratings at T j...tm = 200 s ID(lim) ID(Nom) 2.17 10 15 20 RDS(on) 70 130 100 200 A IIN(on) RDS(on) 90 160 120 240 VIN... |
| Description |
Protected Low Side Switch
SMART LOWSIDE POWER SWITCH 智能LOWSIDE电源开
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| File Size |
246.49K /
10 Page |
 View
it Online |
Download Datasheet
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INFINEON[Infineon Technologies AG]
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| Part No. |
BTS141
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| OCR Text |
...nel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD M
D ra...tm = 350 s, Tj = -40...+150 C Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew r... |
| Description |
Smart Lowside Power Switch
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| File Size |
195.67K /
9 Page |
View
it Online |
Download Datasheet |
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Infineon Technologies A...
INFINEON[Infineon Technologies AG]
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| Part No. |
BTS133
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| OCR Text |
...nel vertical power FET in Smart SIPMOS chip on chip technology. Fully protected by embedded protected functions.
V bb
+
LOAD M
D ra...tm = 350 s, Tj = -40...+150 C Dynamic Characteristics Turn-on time Turn-off time Slew rate on Slew r... |
| Description |
Smart Lowside Power Switch
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| File Size |
195.72K /
9 Page |
View
it Online |
Download Datasheet |
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INFINEON[Infineon Technologies AG]
Infineon Technologies A...
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| Part No. |
BTS933 BTS933E3062A
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| OCR Text |
...nel vertical power FET in Smart SIPMOS (R) chip on chip technology. Fully protected by embedded protected functions.
V bb
General Descri...tm = 350 s, Tj = -40...+150 C, without RCC VIN = 10 V, VDS = 12 V, tm = 350 s, Tj = -40...+150 C, RC... |
| Description |
HITFET Smart Low Side Power Switch
Smart Lowside Power Switch
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| File Size |
181.35K /
11 Page |
View
it Online |
Download Datasheet |
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