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ruggedness Datasheet PDF File

For ruggedness Found Datasheets File :: 10353 Search Time::2.156ms
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				FUJI[Fuji Electric] FUJI ELECTRIC HOLDINGS CO., LTD.
Part No.	2SK3596-01L 2SK3596-01S 2SK3596-01SJ
OCR Text	...1. Guaranteed mark of avalanche ruggedness. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. 1 2 3 1 GATE 2 DRAIN 3 SOURCE Note: 1. Guaranteed m...
Description	N-CHANNEL SILICON POWER MOSFET 30 A, 200 V, 0.066 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	119.46K / 4 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-025
OCR Text	...nductor Company! * Excellent ruggedness * Excellent ruggedness * 48V Supply Voltage Supply The high48VSupply Voltage power HVV1214-075 High Power Gain Voltage device is a high 48V *voltage silicon enhancement mode RF transistor High P...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200楼矛s Pulse, 10% Duty for Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty for Ground Based Radar Applications
File Size	642.96K / 2 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF31451
OCR Text	...WR Output Load VSWR Output Load ruggedness Output Load Impedance Note: VRAMP,MAX =3/8*VBATT +0.18<1.6V -86 -84 -25 -5 dBm dBm dBm dBm dBm dBm -30 -7 -36 -20 50 2.5:1 6:1 10:1 50 2 of 18 7628 Thorndike Road, Greensbo...
Description	QUAD-BAND GSM/EDGE/GSM850/DCS/PCS POWER AMPLIFIER MODULE
File Size	310.65K / 18 Page	View it Online	Download Datasheet

				RF Micro Devices
Part No.	RF5146PCBA-41X
OCR Text	...Width=1154s Output Load VSWR ruggedness 10:1 Output Load Impedance Power Control VRAMP Power Control Range Notes: VRAMP_RP =VRAMP set for 34.2dBm at nominal conditions. Rev A1 DS050928 7628 Thorndike Road, Greensboro, NC ...
Description	QUAD-BAND GSM850/GSM900/DCS/PCS POWER AMP MODULE
File Size	624.48K / 13 Page	View it Online	Download Datasheet

				FUJI ELECTRIC HOLDINGS CO., LTD. FUJI[Fuji Electric]
Part No.	2SK3512-01L 2SK3512-S 2SK3512-SJ 2SK3512 2SK3512-01S
OCR Text	...1. Guaranteed mark of avalanche ruggedness. 1. ( ) : Reference dimensions. 2. The metal part is covered with the solder plating, part of cutting is without the solder plating. DIMENSIONS ARE IN MILLIMETERS. Note: 1. Guaranteed mark of...
Description	N-CHANNEL SILICON POWER MOSFET N沟道功率MOSFET MOSFETs 12 A, 500 V, 0.52 ohm, N-CHANNEL, Si, POWER, MOSFET
File Size	123.43K / 4 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	RMPA1850
OCR Text	...echnology GPRS class 12 capable ruggedness 10:1 50 dB power control range General Description The RMPA1850 power amplifier module (PAM) is designed for GSM/GPRS cellular handset applications. The PAM a fully input and output 50 matched....
Description	Quad Band GSM/GPRS Power Amplifier Module
File Size	116.02K / 9 Page	View it Online	Download Datasheet

				HVVi Semiconductors, Inc.
Part No.	HVV1214-100 HVV1214-100-EK
OCR Text	ruggedness TM L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200s Pulse, 10% Duty For Ground Based Radar Applications FeatuRes * Silicon MOSFET Technology * Operation from 24V to 50V * High Power Gain * Extreme ruggedness * Int...
Description	L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200渭s Pulse, 10% Duty For Ground Based Radar Applications L-Band Radar Pulsed Power Transistor 1200-1400 MHz, 200μs Pulse, 10% Duty For Ground Based Radar Applications
File Size	784.41K / 5 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP61K25HR6 MRFE6VP61K25HSR6
OCR Text	... Field Effect Transistors High ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aeros...
Description	RF Power Field Effect Transistors High ruggedness N--Channel Enhancement--Mode
File Size	924.80K / 13 Page	View it Online	Download Datasheet

				ANADIGICS, Inc
Part No.	AWT6123
OCR Text	...lity, temperature stability and ruggedness. Passive matching networks are integrated to provide internal matching to 50 at both the RF inputs and outputs. Internal DC blocks are provided at the RF inputs. APPLICATIONS GSM850/GSM900/DCS/...
Description	GSM850/GSM900/DCS/PCS Quad Band Power Amplifier
File Size	211.23K / 10 Page	View it Online	Download Datasheet

				Freescale Semiconductor, Inc
Part No.	MRFE6VP61K25HR6 MRFE6VP61K25HR611 MRFE6VP61K25HSR6
OCR Text	... Field Effect Transistors High ruggedness N--Channel Enhancement--Mode Lateral MOSFETs These high ruggedness devices are designed for use in high VSWR industrial (including laser and plasma exciters), broadcast (analog and digital), aeros...
Description	RF Power Field Effect Transistors Enhancement--Mode Lateral MOSFETs
File Size	925.75K / 13 Page	View it Online	Download Datasheet

For ruggedness Found Datasheets File :: 10353 Search Time::2.156ms
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