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HER08 3DD5040 N0417 MT4600 SMBJ160 A1972 P2010 2SAR554P
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  rg-8 Datasheet PDF File

For rg-8 Found Datasheets File :: 36235    Search Time::1.36ms    
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    BCR1AM-8

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR1AM-8
OCR Text ...to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.5A, Instantaneous mea...8 400 2 V/s 2. Rate of decay of on-state commutating current (di/dt)c=-0.5A/ms 3. Peak off-state vol...
Description LOW POWER USE PLANAR PASSIVATION TYPE

File Size 93.19K  /  5 Page

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    CY20AAJ-8 CY20AAJ-8-T13

Renesas Electronics Corporation
Part No. CY20AAJ-8 CY20AAJ-8-T13
OCR Text ...) 120 Tc = 70C CM = 400 F RG = 30 80 40 0 0 2 4 6 8 Gate-Emitter Voltage VGE (V) Rev.2.00 Jul 07, 2006 page 2 of 4 CY20AAJ-8 Application Example IXe Vtrig CM + - Trigger Signal V...
Description Nch IGBT for Strobe Flash

File Size 151.88K  /  5 Page

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    CY25AAJ-8 CY25AAJ-8-T13

Renesas Electronics Corporation
Part No. CY25AAJ-8 CY25AAJ-8-T13
OCR Text ...) 120 Tc = 70C CM = 400 F RG = 30 80 40 0 0 2 4 6 8 Gate-Emitter Voltage VGE (V) Rev.2.00 Jul 07, 2006 page 2 of 4 CY25AAJ-8 Application Example IXe Vtrig CM + - Trigger Signal V...
Description Nch IGBT for Strobe Flash

File Size 159.94K  /  5 Page

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    NEC Corp.
NEC[NEC]
Part No. NE8500295-8 NE8500295-6 NE8500295-4 NE85002 NE8500200 NE8500200-RG NE8500200-WB NE8500200-WB-A
OCR Text ...00(*) NE8500200-WB(*) NE8500200-RG(*) NE8500295-4 NE8500295-6 NE8500295-8 33.8 min 8.0 min 5.9 0.2 33.8 min 33.8 min 33.5 min 10.5 min 9.5 min 8.0 min 3.5 to 5.5 5.5 to 7.5 7.5 to 8.5 DRAIN 14.0 0.3 18.5 MAX. 2.1 0.15 0...
Description 2 W C-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
C BAND, GaAs, N-CHANNEL, RF POWER, MESFET

File Size 47.52K  /  8 Page

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    Mitsubishi Electric Corporation
Part No. BCR08AS-8
OCR Text ...to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous mea...8 400 2 V/s 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state vol...
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 110.35K  /  5 Page

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    BCR08AS-8

POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR08AS-8
OCR Text ...to case V4 Tj=25C, VD=6V, RL=6, RG=330 Tj=25C, VD=6V, RL=6, RG=330 Test conditions Tj=125C, VDRM applied Tc=25C, ITM=1.2A, Instantaneous mea...8 400 2 V/s 2. Rate of decay of on-state commutating current (di/dt)c=-0.4A/ms 3. Peak off-state vol...
Description LOW POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 90.31K  /  5 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. CT20VS-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 700F VGE = 28V MAXIMUM CONDITION 360V 130A 800F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 27.66K  /  2 Page

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    MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. CT20VSL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description STROBE FLASHER USE

File Size 23.07K  /  2 Page

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    Mitsubishi Electric Corporation
POWEREX[Powerex Power Semiconductors]
Part No. CT20VSL-8
OCR Text ... VCM IGBT GATE VG VOLTAGE RG VCE VG IGBT Xe TUBE CURRENT Ixe RECOMMEND CONDITION VCM = 330V IP = 120A CM = 300F VGE = 12V MAXIMUM CONDITION 350V 130A 400F Notice 1. Gate drive voltage during on-period must be applied to satis...
Description MITSUBISHI INSULATED GATE BIPOLAR TRANSISTOR STROBE FLASHER USE

File Size 25.72K  /  2 Page

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For rg-8 Found Datasheets File :: 36235    Search Time::1.36ms    
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