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  rf power ldmos transistors hig Datasheet PDF File

For rf power ldmos transistors hig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

    INFINEON[Infineon Technologies AG]
Part No. PTF080601F PTF080601E PTF080601A PTF080601
Description ldmos rf power Field Effect Transistor 60 W, 860-960 MHz ldmos射频功率场效应晶体管60瓦,860-960兆赫
ldmos rf power Field Effect Transistor 60 W 860-960 MHz
ldmos rf power Field Effect Transistor 60 W/ 860-960 MHz

File Size 293.07K  /  6 Page

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    BLC6G22-100 BLC6G22LS-100 BLC6G22-130

NXP Semiconductors N.V.
Part No. BLC6G22-100 BLC6G22LS-100 BLC6G22-130
Description UHF power ldmos transistor S BAND, Si, N-CHANNEL, rf power, MOSFET

File Size 44.14K  /  9 Page

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    2SA2118

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2118
Description power Device - power transistors - General-Purpose power amplification
power transistors Silicon PNP epitaxial planar type

File Size 65.26K  /  3 Page

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    2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468STPS 2SD1865TV2Q 2SD1865TV2R

ROHM
Part No. 2SD1468S 2SD1834 2SD1834T100W 2SD1468STPR 2SD1468STPS 2SD1865TV2Q 2SD1865TV2R
Description 1000 mA, 15 V, NPN, Si, SMALL SIGNAL TRANSISTOR
transistors > Small Signal Bipolar transistors(up to 0.6W)
transistors > Medium power Bipolar transistors(0.5W-1.0W)
BJT
Low-power, Single/Dual-Level Battery Monitors with Hysteresis 晶体

File Size 36.73K  /  1 Page

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    NE55410GR07

California Eastern Labs
Part No. NE55410GR07
Description N-CHANNEL SILICON power ldmos FET FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER

File Size 529.90K  /  14 Page

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    NE55410GR NE55410GR-T3-AZ 55410

CEL[California Eastern Labs]
Part No. NE55410GR NE55410GR-T3-AZ 55410
Description N-CHANNEL SILICON power ldmos FET FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER

File Size 314.27K  /  13 Page

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    California Eastern Laboratories
Part No. 55410 NE55410GR-T3-AZ
Description N-CHANNEL SILICON power ldmos FET FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER

File Size 316.24K  /  13 Page

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    NE55410GR NE55410GR-T3-AZ

NEC
Part No. NE55410GR NE55410GR-T3-AZ
Description N-CHANNEL SILICON power ldmos FET FOR 2 W 10 W VHF to L-BAND SINGLE-END power AMPLIFIER

File Size 177.04K  /  13 Page

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    2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R

Rohm Co., Ltd.
Rohm CO.,LTD.
ROHM[Rohm]
Part No. 2SB1132 2SB1237 2SA1515S A5800347 2SB1132P 2SB1132R
Description Medium power Transistor 中等功率晶体
TRANSISTOR | BJT | PNP | 32V V(BR)CEO | 1A I(C) | SC-62
From old datasheet system
Medium power Transistor (-32A,-1A)
transistors > Small Signal Bipolar transistors(up to 0.6W)
transistors > Medium power Bipolar transistors(0.5W-1.0W)

File Size 121.30K  /  4 Page

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    MOTOROLA[Motorola, Inc]
Motorola, Inc.
Part No. MHVIC915R2_D MHVIC915 MHVIC915R2 MHVIC915R2/D
Description MHVIC915R2 CDMA, GSM/GSM EDGE, 946-960 MHz, 15 W, 27 V rf ldmos Wideband Integrated Amplifier
746-960 MHz rf ldmos Wideband Integrated power Amplifier

File Size 648.85K  /  12 Page

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For rf power ldmos transistors hig Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | <10> | 11 | 12 | 13 | 14 | 15 |   

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