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  non-programmable Datasheet PDF File

For non-programmable Found Datasheets File :: 21906    Search Time::1.766ms    
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    Mitsubishi Electric Corporation
Part No. MH8S72PHC-10 MH8S72PHC-7 MH8S72PHC-8
OCR Text ... 80 11 dimm configuration type (non-parity,parity,ecc) ecc 02 12 refresh rate/type self refresh(15.625us) 80 13 sdram width,primary dram x16 10 14 error checking sdram data width x16 10 15 minimum clock delay,back to back random column addr...
Description 603979776-BIT (8388608 - WORD BY 72-BIT)SynchronousDRAM

File Size 616.85K  /  55 Page

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    NOIP1SN2000A NOIP1SN5000A

ON Semiconductor
Part No. NOIP1SN2000A NOIP1SN5000A
OCR Text ...mes per second @ 5 mp (zero rot/non ? zero rot) ? 230/180 frames per second @ 2 mp (zero rot/non ? zero rot) ? 250/200 frames per second @ f...programmable region of interest (roi) readout ? pipelined and triggered global shutter ? lvds channe...
Description MegaPixels Global Shutter CMOS Image Sensors

File Size 848.89K  /  80 Page

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    ST Microelectronics
Part No. ST10F276Z5 ST10F276Z5Q3 ST10F276Z5T3
OCR Text ... . . . . . . . . 38 4.5.2 flash non volatile write protection x register low . . . . . . . . . . . . . . . . . . 38 4.5.3 flash non volatile...programmable output clock divi der . . . . . . . . . . . . . . . . . . . . . . . . . . 137 22 reg...
Description 16-BIT MICROCONTROLLER WITH MAC UNIT, UP TO 832 KBYTES FLASH MEMORY AND UP TO 68 KBYTES RAM

File Size 2,030.07K  /  239 Page

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    Mitsubishi Electric Corporation
Part No. MH8S64PHC-10 MH8S64PHC-7 MH8S64PHC-8
OCR Text ... 80 11 dimm configuration type (non-parity,parity,ecc) non-parity 00 12 refresh rate/type self refresh(15.625us) 80 13 sdram width,primary dram x16 10 14 error checking sdram data width n/a 00 15 minimum clock delay,back to back random colu...
Description 536870912-BIT (8388608 - WORD BY 64-BIT)SynchronousDRAM

File Size 615.86K  /  55 Page

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
Part No. M381L6523CUM-CLCC M381L2923CUM-CCC M368L2923CUN-CLCC M368L3324CUS-CLCC M368L6523CUS-CCC
OCR Text ...512mb c-die with 64/72-bit ecc/non ecc 66 tsop-ii with pb-free revision 1.0 february. 2005 (rohs compliant) ddr sdram 256mb, 512mb, 1g...programmable read latency : ddr 333(2.5 clock), ddr400(3 clock) ? programmable burst length (2, 4, ...
Description DDR SDRAM Unbuffered Module DDR SDRAM的缓冲模

File Size 445.54K  /  25 Page

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    http://
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L6523DUS-LB3 M381L6523DUM-LCC M381L6523DUM-LB3 M368L2923DUN-LB3 M368L2923DUN-LCC M368L3324DUS-CCC M381L2923DUM-LB3 M381L2923DUM-CCC M368L6523DUS-CCC M368L2923DUN-CB3 M381L6523DUM-CB3 M381L6523DUM-CCC M368L2923DUN-CCC
OCR Text ... on 512mb d-die with 64/72-bit non ecc/ecc ddr sdram 256mb, 512mb, 1gb unbuffered dimm rev. 0.1 june 2005 table of contents 1.0 orderi...programmable read latency : ddr333(2.5 clock), ddr400(3 clock) ? programmable burst length (2, 4, 8...
Description DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb D-die with 64/72-bit Non ECC/ECC 66 TSOP-II with Pb-Free (RoHS compliant) DDR SDRAM的缓冲模84pin缓冲模块的发展为本的512Mb芯片4/72-bit非ECC /有铅ECC6 TSOP-II免费(符合RoHS

File Size 454.07K  /  25 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L6523BUM-LCC M381L6523BUM-LB3 M368L6523BTM-LCC M368L6523BUN-LB3 M381L6523BUM-LCC M381L6523BTM-LB3 M381L6523BTM-LCC M368L2923BTN-CB3 M381L2923BTM-LB3 M368L3324BTM-CB3 M368L2923BTN-LB3 M381L6523BTM-CB3 M368L3324BUM-CB3 M368L3324BTM-LB3 M368L6523BTN-CB3 M381L2923BTM-CB3 M381L2923BUM-CB3 M381L2923BUM-LB3 M381L6523BUM-CB3 M368L2923BUM-CCC M368L2923BUM-LCC M368L2923BTM-CCC M381L2923BTM-LCC M368L2923BTM-LCC M368L2923BUN-CB3 M368L6523BUN-CB3 M368L6523BUM-CCC M381L2923BUM-CCC M381L6523BTM-CCC
OCR Text ... on 512mb b-die with 64/72-bit non ecc/ecc ddr sdram 256mb, 512mb, 1gb unbuffered dimm rev. 1.1 june 2005 table of contents 1.0 orderi...programmable read latency : ddr333(2.5 clock), ddr400(3 clock) ? programmable burst length (2, 4, 8...
Description 64M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 64 DDR DRAM MODULE, 0.65 ns, DMA184
128M X 72 DDR DRAM MODULE, 0.7 ns, DMA184
DDR SDRAM Unbuffered Module 184pin Unbuffered Module based on 512Mb B-die with 64/72-bit Non ECC/ECC 66 TSOP-II DDR SDRAM的缓冲模84pin缓冲模块基于512Mb乙芯片与64/72-bit非ECC / ECC6 TSOP-II
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-TSOP; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:70ns; Series:S29AL
Flash Memory IC; Memory Size:4Mbit; Supply Voltage Max:3V; Package/Case:48-FBGA; Leaded Process Compatible:Yes; Peak Reflow Compatible (260 C):Yes; Access Time, Tacc:90ns; Series:S29AL
Single-Supply Voltage Translator 6-SOT-23 -40 to 85

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    SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. M368L6423ETN-AA M368L3223ETN-AA M381L3223ETM-AA M381L6423ETM-AA M381L6423ETM-A2 M381L3223ETM-CB3 M381L3223ETM-CLB3 M381L6423ETM-CLB3 M381L6423ETM-CB3 M381L3223ETM-A2 M381L3223ETM-B0 M368L3223ETN-CB3 M368L3223ETN-A2 M368L6423ETN-CB3 M368L6423ETN-B0 M368L6423ETN-A2 M368L3223ETN-B0 M368L3223ETN-CLB3 M368L6423ETN-CLB3
OCR Text ...256mb e-die with 64/72-bit ecc/non ecc revision 1.1 august. 2003 ddr sdram 256mb, 512mb unbuffered dimm rev. 1.1 august. 2003 revision...programmable read latency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable bur...
Description DDR SDRAM Unbuffered Module

File Size 379.33K  /  22 Page

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    Sanken Electric Co.,Ltd.
Sanken Electric Co., Ltd.
Part No. M368L3223FTN-CB3LAA M368L1624FTM-CB3AA M381L6423FTM-CLB3B0 M381L3223FTM-CLB3A2 M368L6423FTN-CB3B0
OCR Text ... on 256mb f-die with 64/72-bit non-ecc / ecc revision 1.2 may. 2004 ddr sdram 256mb, 512mb unbuffered dimm rev. 1.2 may, 2004 revision...programmable read lat ency 2, 2.5 (clock) ? programmable burst length (2, 4, 8) ? programmable bu...
Description 184pin Unbuffered Module based on 256Mb F-die with 64/72-bit Non-ECC / ECC 184pin缓冲模块,基56Mb的F -死去64/72-bit非ECC / ECC

File Size 447.53K  /  25 Page

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    ATTINY48-MUR ATTINY48-MMHR ATTINY48-CCU ATTINY48-AUR ATTINY48-CCUR

ATMEL Corporation
Part No. ATTINY48-MUR ATTINY48-MMHR ATTINY48-CCU ATTINY48-AUR ATTINY48-CCUR
OCR Text ...Static Operation High Endurance Non-volatile Memory Segments - 4K/8K Bytes of In-System Self-Programmable Flash Program Memory - 64/64 Bytes EEPROM - 256/512 Bytes Internal SRAM - Write/Erase Cycles: 10,000 Flash/100,000 EEPROM - Data Reten...
Description 8-bit Microcontroller with 4/8K Bytes In-System Programmable Flash

File Size 549.80K  /  26 Page

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