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EFY3864X 60J10 PT200S8 26100 74LVX32 AI421530 1M110Z EPB5160G
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    BXMP1008

API Technologies Corp
Spectrum Microwave, Inc.
Part No. BXMP1008
OCR Text ...) characteristic typical min/max ta= 25 oc ta = 0 oc to +60 oc frequency (mhz) 50 - 250 mhz 50 - 250 mhz gain (db) 17 16 min. power @ 1 db comp. (dbm) 33.5 33 min. reverse isolation (db) -20 -19 max. vswr in 1.8:1 2:0...
Description RF AMPLIFIER

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    TOSHIBA
Part No. TPN8R903NL
OCR Text ...= 6 a v gs = 10 v, i d = 10 a min 30 15 1.3 typ. 10.2 7.6 max 0.1 10 2.3 12.7 8.9 unit a v m ? 6.2. 6.2. 6.2. 6.2. dynamic characteristics (t dynamic characteristics (t dynamic characteristics (t dynamic characteristics (...
Description Power MOSFET (N-ch single VDSS≤30V)

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    Semikron
Part No. SKIIP83ANB08
OCR Text ...ol diode & igbt thyristor ac, 1 min. C 40 ... + 150 C 40 ... + 125 C 40 ... + 125 2500 c c c v characteristics symbol conditions 1) min. typ. max. units diode - rectifier v f v to r t r thjh i f = 75 a t j = 125 c t j = 125 c t j = 125...
Description 3-phase bridge rectifier IGBT braking chopper

File Size 361.13K  /  7 Page

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    Ruilongyuan Electronics Co.,Ltd
Ruilongyuan Electronics...
Part No. RLST143A053LV
OCR Text ...mensions dim inches millimeters min nom max min nom max a 0.031 - 0.048 0.80 - 1.22 a 0.000 - 0.006 0.013 - 0.15 a2 0.029 0.035 0.042 0.75 0.90 1.07 b 0.011 - 0.020 0.30 - 0.51 b1 0.029 - 0.037 0.76 - 0.94 c 0.003 - 0.008 0.08 - 0.20 d 0.11...
Description TVS/ESD Arrays

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    PHB153NQ08LT

NXP SEMICONDUCTORS
Part No. PHB153NQ08LT
OCR Text ...4). symbol parameter conditions min max unit v ds drain-source voltage (dc) 25 c t j 175 c - 75 v v dgr drain-gate voltage (dc) 25 c t j 175 c; r gs =20k w -75v v gs gate-source voltage (dc) - 15 v i d drain current (dc) t mb =25 ...
Description 75 A, 75 V, 0.0066 ohm, N-CHANNEL, Si, POWER, MOSFET

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    2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K

HITACHI[Hitachi Semiconductor]
Part No. 2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text ... Symbol V(BR)CBO V(BR)CER I CBO min Typ Max -- -- -1.0 -- -1.0 -- -1.0 2SA778A(K) min Typ Max -- -- -- -1.0 -1.0 200 -1.0 V V pF MHz ns s s Unit V V A A A Test conditions I C = -50 A, IE = 0 I C = -50 A, RBE = 30 k VCB = -100 V, IE = 0 VCB ...
Description Silicon PNP Epitaxial

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    Toshiba
Part No. LTM10C313U
OCR Text ...e absolute maximum ratings item min. max. unit ( v dd ) -0.3 4.0 v supply voltage ( v fl ) 0 2.0 kv( rms) fl driving frequency ( f fl ) - 100 khz input signal voltage ( v in ) -0.3 v dd +0.3 v operating temperature 0 50 c storage tempera...
Description LCD Module

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    Socay Electornics Co., Ltd.
Part No. ESDP020604V12B4
OCR Text ...sembly pre heat -temperature min (t s(min) ) +150 c -temperature max (t s(max) ) +200 c -time (min to max) (t s ) 60 -180 seconds average ramp up rate ( liquidus temp t l ) to peak 3 c/second max t s(max) to t l - ramp-up r...
Description ESD Array

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