K4H560838E-GLA2 pdf Datasheet P1 Part Num --- IC-ON-LINE


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K4H560838E-GLA2 Datasheet PDF File

For K4H560838E-GLA2 Found Datasheets File :: 23+ Page :: | <1> | 2 | 3 |

					SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GLB3 K4H560438E-GC K4H560438E-GC_LA2 K4H560438E-GC_LB0 K4H560438E-GC_LB3 K4H560438E-GCA2 K4H560438E-GCB0 K4H560438E-GCB3 K4H560438E-GLA2 K4H560438E-GLB0 K4H560438E-GLB3 K4H560838E-GC_LA2 K4H560838E-GC_LB0 K4H560838E-GC_LB3 K4H560838E-GCA2 K4H560838E-GCB0 K4H560838E-GCB3 K4H560838E-GLA2 K4H560838E-GLB0
Description	256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	241.25K / 24 Page	View it Online	Download Datasheet

HUA FENG CIRCUIT

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. http://
Part No.	K4H560838E-GC/LA2 K4H560838E-GC/LB0 K4H560838E-GC/LB3 K4H560438E-GC/LA2 K4H560438E-GC/LB0 K4H560438E-GC/LB3 K4H560438E-GLB0 K4H560438E-GLB3 K4H560438E-GCB3 K4H560438E-GCA2 K4H560838E-GCA2 K4H560438E-GCB0 K4H560838E-GCB0 K4H560838E-GLB0 K4H560838E-GLB3 K4H560838E-GLA2
Description	DIODE ZENER TRIPLE ISOLATED 200mW 39.13Vz 5mA-Izt 0.02518 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 36.28Vz 5mA-Izt 0.02522 0.05uA-Ir 30 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 22.08Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 22.1Vz 5mA-Izt 0.02514 0.05uA-Ir 17 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 13.79Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 14Vz 10mA-Izt 0.02503 0.05uA-Ir 11 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12.9Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 11.1Vz 10mA-Izt 0.02523 0.1uA-Ir 8.4 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER TRIPLE ISOLATED 200mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-363 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 12Vz 10mA-Izt 0.02532 0.1uA-Ir 9.1 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 19.7Vz 10mA-Izt 0.0251 0.05uA-Ir 15 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 23.7Vz 5mA-Izt 0.02509 0.05uA-Ir 19 SOT-23 3K/REEL DIODE ZENER TRIPLE ISOLATED 200mW 12.88Vz 10mA-Izt 0.02562 0.1uA-Ir 10 SOT-363 3K/REEL 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8) 256Mb E-die DDR SDRAM Specification 60Ball FBGA (x4/x8)
File Size	245.98K / 24 Page	View it Online	Download Datasheet


Part No.	K4H560838E-NLB3
Description	32M X 8 DDR DRAM, 0.7 ns, PDSO54
File Size	213.06K / 24 Page	View it Online	Download Datasheet

					Samsung semiconductor
Part No.	K4H560838E-GCCC K4H560838E-GCC4
Description	256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	198.99K / 18 Page	View it Online	Download Datasheet

					SPRAGUE-GOODMAN ELECTRONICS INC
Part No.	GLA22110 GLA22010 GLA15110
Description	1 ELEMENT, 220 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 22 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD 1 ELEMENT, 150 uH, FERRITE-CORE, GENERAL PURPOSE INDUCTOR, SMD
File Size	46.77K / 1 Page	View it Online	Download Datasheet


Part No.	K4H560838E-VCB00
Description	32M X 8 DDR DRAM, 0.75 ns, PDSO54
File Size	356.95K / 24 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-GCCC K4H560438E-GCC4 K4H560438E-GCCC K4H560838E-GCC4
Description	DIODE ZENER SINGLE 300mW 27Vz 5mA-Izt 0.02503 0.05uA-Ir 21 SOT-23 3K/REEL 256Mb的电子芯片的DDR 400内存规格60Ball FBGA封装（x4/x8 DIODE ZENER SINGLE 300mW 29.8Vz 5mA-Izt 0.02503 0.05uA-Ir 23 SOT-23 3K/REEL 256Mb E-die DDR 400 SDRAM Specification 60Ball FBGA (x4/x8)
File Size	195.42K / 18 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd.
Part No.	K4H560438E-ZLB30 K4H560838E-ZLB30
Description	64M X 4 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60 32M X 8 DDR DRAM, 0.7 ns, PBGA60 ROHS COMPLIANT, FBGA-60
File Size	385.02K / 24 Page	View it Online	Download Datasheet

					Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD.
Part No.	K4H560438E-NC/LA2 K4H560838E-NC/LA2 K4H560438E-NC/LB0 K4H560838E-NC/LB0 K4H560438E-NC/LB3 K4H560838E-NC/LB3 K4H560438E-NCA2 K4H560438E-NCB0 K4H560838E-NCA2 K4H560438E-NCB3 K4H560838E-NCB0 K4H560838E-NCB3 K4H560838E-NLB0 K4H560438E-NLB3 K4H560438E-NLB0 K4H560838E-NLB3 K4H560838E-NLA2
Description	256Mb E-die DDR SDRAM Specification 54pin sTSOP(II) 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二 DIODE ZENER SINGLE 300mW 43Vz 5mA-Izt 0.02 0.05uA-Ir 33 SOT-23 3K/REEL 256Mb的电子芯片DDR SDRAM内存规格54pin sTSOP（二 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 20-HTSSOP 0 to 70 Quad Wide Bandwidth High Output Drive Single Supply Op Amp 16-SOIC -40 to 125 10-Bit, 32 kSPS ADC Serial Out, uProcessor Periph./Standalone, 11 Ch. 20-SOIC 256Mb E-die DDR SDRAM Specification 54pin sTSOP(II)
File Size	216.89K / 24 Page	View it Online	Download Datasheet

					SAMSUNG[Samsung semiconductor]
Part No.	K4H560838E-ZLB3 K4H560438E-ZC K4H560438E-ZC_LA2 K4H560438E-ZC_LB0 K4H560438E-ZC_LB3 K4H560438E-ZCA2 K4H560438E-ZCB0 K4H560438E-ZCB3 K4H560438E-ZLA2 K4H560438E-ZLB0 K4H560438E-ZLB3 K4H560838E-ZC_LA2 K4H560838E-ZC_LB0 K4H560838E-ZC_LB3 K4H560838E-ZCA2 K4H560838E-ZCB0 K4H560838E-ZCB3 K4H560838E-ZLA2 K4H560838E-ZLB0
Description	256Mb E-die DDR SDRAM Specification 60 FBGA with Pb-Free (RoHS compliant)
File Size	355.74K / 23 Page	View it Online	Download Datasheet

For K4H560838E-GLA2 Found Datasheets File :: 23+ Page :: | <1> | 2 | 3 |

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