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  K4E16704112D Datasheet PDF File

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.
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