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  jfet-n-channel Datasheet PDF File

For jfet-n-channel Found Datasheets File :: 1292    Search Time::1.438ms    
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    APT12045L2VR

ADPOW[Advanced Power Technology]
Part No. APT12045L2VR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. TO-264 Max * TO-264 MAX Package * Faster Switching...
Description Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.

File Size 58.91K  /  2 Page

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    SD210DET SD214DE SD210DE

http://
LINEAR[Linear Integrated Systems]
Part No. SD210DET SD214DE SD210DE
OCR Text JFET SWITCH TYPICAL CHARACTERISTICS Typical Characteristics Linear Integrated Systems * 4042 Clipper Court * Fremont, CA 94538 * Tel: 510 490-9160 * Fax: 510 353-0261 Typical Characteristics (Cont'd) Linear Integrated Systems...
Description N-CHANNEL LATERAL DMOS JFET SWITCH TYPICAL CHARACTERISTICS

File Size 163.45K  /  2 Page

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    SD210DE SST823 SST824 SD5001N SD5401CY SST215

LINEAR[Linear Integrated Systems]
Part No. SD210DE SST823 SST824 SD5001N SD5401CY SST215
OCR Text ...er analog switches (PMOS, CMOS, JFET, BIFET etc.). Still, when the offsets created are unacceptable, charge injection compensation techniques exist that eliminate or minimize them. The solution basically consists of injecting another charge...
Description Voltage Regulator IC; Package/Case:5-SOT-23; Output Current:150mA; Output Voltage:2.9V; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process Compatible:No; Output Current Max:150mA; Output Voltage Max:2.9V RoHS Compliant: No
Voltage Regulator IC; Output Current:150mA; Output Voltage:2.8V; Package/Case:5-SOT-23; Supply Voltage Max:6V; Current Rating:150mA; Leaded Process
HIGH SPEED DMOS FET ANALOG SWITCHES AND SWITCH ARRAYS

File Size 353.61K  /  11 Page

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    SML20J122

Seme LAB
Part No. SML20J122
OCR Text ...is new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise sta...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 22.91K  /  2 Page

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    SML20J175

Seme LAB
Part No. SML20J175
OCR Text ...is new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise sta...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 22.91K  /  2 Page

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    SML20J97

Seme LAB
Part No. SML20J97
OCR Text ...is new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise sta...
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

File Size 22.92K  /  2 Page

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    MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON2098

MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MMBF4391LT1 MMBF4392L MMBF4392LT1 MMBF4393LT1 ON2098
OCR Text JFET Switching Transistors N-Channel 2 SOURCE 3 GATE MMBF4391LT1 MMBF4392LT1 MMBF4393LT1 3 1 1 DRAIN MAXIMUM RATINGS Rating Drain-Source Voltage Drain-Gate Voltage Gate-Source Voltage Forward Gate Current Symbol VDS VDG VGS IG(...
Description From old datasheet system
CASE 3188, STYLE 10 SOT3 (TO?36AB
JFET Switching Transistors

File Size 137.40K  /  6 Page

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    APT5010B2VFR

Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
Part No. APT5010B2VFR
OCR Text ...is new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) also achieves faster switching speeds through optimized gate layout. * Fast Recovery Body Diode * Lower Leakage * Faster...
Description POWER MOS V 500V 47A 0.100 Ohm
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
TERM BLOCK 10MM VERT 3POS PCB 电源MOS V是一个高电压N新一代通道增强型功率MOSFET

File Size 64.50K  /  4 Page

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