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  irfp250 Datasheet PDF File

For irfp250 Found Datasheets File :: 653    Search Time::0.891ms    
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    IRFP250

STMicroelectronics
Part No. irfp250
OCR Text irfp250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMeshTMII MOSFET TYPE irfp250 s s s s s VDSS 200V RDS(on) < 0.085 ID 33 A TYPICAL RDS(on) = 0.073 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMAR...
Description N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET

File Size 169.98K  /  8 Page

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    Intersil
Part No. irfp250 FN2330
OCR Text irfp250 Data Sheet July 1999 File Number 2330.3 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to wi...
Description 33A, 200V, 0.085 Ohm, N-Channel Power MOSFET
From old datasheet system

File Size 55.16K  /  7 Page

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意法半导
ST Microelectronics
Part No. irfp250
OCR Text irfp250 N-CHANNEL 200V - 0.073 - 33A TO-247 PowerMeshTMII MOSFET TYPE irfp250 s s s s s VDSS 200V RDS(on) < 0.085 ID 33 A TYPICAL RDS(on) = 0.073 EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED NEW HIGH VOLTAGE BENCHMAR...
Description N-CHANNEL MOSFET0
N-CHANNEL 200V - 0.073ohm - 33A TO-247 PowerMesh II MOSFET
N-CHANNEL 200V 0.073 OHM 33A TO-247 POWERMESH II MOSFET

File Size 254.72K  /  8 Page

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    IRFP250 SIHFP250 SIHFP250-E3 IRFP250PBF

Vishay Siliconix
Part No. irfp250 SIHFP250 SIHFP250-E3 irfp250PBF
OCR Text irfp250, SiHFP250 Vishay Siliconix Power MOSFET PRODUCT SUMMARY VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration VGS = 10 V 140 28 74 Single D FEATURES 200 0.085 * * * * * * * Dynamic dV/dt Rating Repetitiv...
Description Power MOSFET

File Size 1,860.64K  /  8 Page

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    IRFP250 TO-247AD

IXYS[IXYS Corporation]
Part No. irfp250 TO-247AD
OCR Text Standard Power MOSFET IRFP 250 VDSS = 200 V ID (cont) = 30 A RDS(on) = 85 m N-Channel Enhancement Mode Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR dv/dt PD TJ TJM T stg Md Weight Test Conditions TJ = 25C to 150C TJ = 25C to 1...
Description From old datasheet system
Standard Power MOSFET

File Size 46.14K  /  2 Page

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    IRFP250 IRFP250B IRFP250BFP001

FAIRCHILD[Fairchild Semiconductor]
Part No. irfp250 irfp250B irfp250BFP001
OCR Text irfp250B November 2001 irfp250B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar, DMOS technology. This advanced technology...
Description 200V N-Channel B-FET / Substitute of irfp250 & irfp250A
200V N-Channel MOSFET

File Size 667.05K  /  8 Page

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    HFA08TB120 HFB08TB120

IRF[International Rectifier]
Part No. HFA08TB120 HFB08TB120
OCR Text ... di F /dt dif/dt ADJUST D G irfp250 S Fig. 9- Reverse Recovery Parameter Test Circuit 3 IF 0 t rr ta tb 4 2 Q rr I RRM 0.5 I RRM di(rec)M/dt 0.75 I RRM 5 1 di F /dt di f 1. diF/dt - Rate of change of curr...
Description 1200V 8A HEXFRED Discrete Diode in a TO-220AC package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode

File Size 129.16K  /  7 Page

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    HFA16TA60C

IRF[International Rectifier]
Part No. HFA16TA60C
OCR Text ... = 70H D.U.T. dif/dt ADJUST D G irfp250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change...
Description 600V 16A HEXFRED Common Cathode Diode in a TO-220AB package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode

File Size 179.28K  /  6 Page

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    HFA16TB120

IRF[International Rectifier]
Part No. HFA16TB120
OCR Text ... = 70H D.U.T. dif/dt ADJUST D G irfp250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change...
Description Ultrafast/ Soft Recovery Diode
Ultrafast, Soft Recovery Diode

File Size 130.09K  /  6 Page

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    HFA30TA60C

IRF[International Rectifier]
Part No. HFA30TA60C
OCR Text ... = 70H D.U.T. dif/dt ADJUST D G irfp250 S 1 0.75 I RRM di f /dt 4. Qrr - Area under curve defined by trr and IRRM trr X IRRM Qrr = 2 5. di(rec)M/dt - Peak rate of change of current during tb portion of trr 1. dif/dt - Rate of change...
Description 600V 30A HEXFRED Common Cathode Diode in a TO-220AB package
Ultrafast, Soft Recovery Diode
Ultrafast/ Soft Recovery Diode

File Size 185.47K  /  6 Page

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