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    Fairchild Semiconductor, Corp.
Part No. irfp244a
OCR Text irfs244a bv dss = 250 v r ds(on) = 0.28 w i d = 10.2 a 250 10.2 6.5 64 30 455 10.2 7.3 4.8 73 0.59 - 55 to +150 300 1.7 40 -- -- avalanche rugged technology rugged gate oxide technology lower input capacitance ...
Description N-Channel Power MOSFET(N沟道增强型功率MOS场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流6A N沟道功率MOSFET（不适用沟道增强型功率马鞍山场效应管（漏源电压为250V，导通电阻为0.28Ω，漏电流6A条）
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