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  ipp Datasheet PDF File

For ipp Found Datasheets File :: 211637    Search Time::3.672ms    
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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ...body. NOTE 3. SURGE CURRENT (i r) Surge current is specified as the maximum allowable peak, non-recurrent square-wave current with a pulse width, PW, of 8.3 ms. The data given in Figure 6 may be used to find the maximum surge current for...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-Z-Diodes (non-planar technology)

File Size 87.83K  /  6 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ...IE = -10 A, IC = 0 VCB = -50 V, I E = 0 VEB = -2 V, IC = 0 VCE = -12 V, IC = -2 mA IC = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA Typ --...P -40 C =0 .4 W -20 200 -20 A -10 IB = 0 0 50 100 150 Ambient Temperature ...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

File Size 40.84K  /  8 Page

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    2SA1193 2SA1193K

HITACHI[Hitachi Semiconductor]
Part No. 2SA1193 2SA1193K
OCR Text ...-1.0 -- -1.5 -2.0 -- -- V V s s I C = -250 mA I B1 = -IB2 = -0.5 mA Unit V A A Test conditions I C = -1 mA, RBE = VCB = -60 V, IE = 0 VEB =...P =1 PW Ta = 25C 0.3 0 50 100 150 Ambient Temperature Ta (C) -10 -30 -100 -300 Collec...
Description Silicon PNP Epitaxial/ Darlington
Silicon PNP Epitaxial, Darlington

File Size 33.83K  /  6 Page

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    2SA1194 2SA1194K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA1194 2SA1194K
OCR Text ...pation Symbol VCBO VCEO VEBO IC I C(peak) PC PC * Junction temperature Storage temperature Note: 1. Value at TC = 25C Tj Tstg 1 Rating -...P c= .0 -0.8 8W -1 .6 TC = 25C -0 4 -0. DC Current Transfer Ratio vs. Collector Current 100,000 DC c...
Description Silicon PNP Epitaxial

File Size 34.49K  /  5 Page

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    2SA2027

Isahaya Electronics Corporation
ETC[ETC]
List of Unclassifed Manufacturers
Part No. 2SA2027
OCR Text I`***--p VSR" PNPGs^LV@OE ST*@--v 2SA2027 Z/Z**Z~OEVSR" PNPGs^LV@OEg "WX^A*A*`IE*YOEv*A*`eAeU**B *@ZbgI*OE^*A*-"xZA`*--pAEA***L-Zg--p1/2 3/4U**B SO*@OE*@*} 'PE :mm 4.6 MAX 1.6 1.5 "A*@'* *E*OESOOEI1/2*AZbgI*OE^*A*-"xZA`*A"\ E C B ...
Description SILICON EPITAXIAL TRANSISTOR

File Size 54.89K  /  4 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...tion voltage VCE(sat) (V) IC / I B = 8 Collector power dissipation PC (W) Collector current IC (A) Ta = 100C 25C -1 Ta = 100C -4 - 0.1 25C -2 -25C -25C - 0.01 - 0.001 - 0.01 - 0.1 -1 -10 Ambient...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...Collector current IC (A) -10 I CP IC -1 t = 1 ms t = 10 ms t=1s - 0.1 - 0.01 -1 -10 -100 -1 000 Collector to emitter voltage VCE (V) 2 SJD00286BED Request for your special attention and precautions in using ...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA673A 2SA673AK 2SA673A_K

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. 2SA673A 2SA673AK 2SA673A_K
OCR Text ...V V V A A V V V Test conditions I C = -10 A, IE = 0 I C = -1 mA, RBE = I E = -10 A, IC = 0 VCB = -20 V, IE = 0 VEB = -3 V, IC = 0 VEB = -3 ...P.G. tr 5 ns PW 5 s duty ratio 2% CRT Switching Time Test Circuit tstg Test Circuit D.U.T. 1.0 21...
Description Silicon PNP Epitaxial

File Size 35.43K  /  8 Page

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    2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K

HITACHI[Hitachi Semiconductor]
Part No. 2SA778 2SA778A 2SA778AK 2SA778K 2SA778_K 2SA778A_K
OCR Text ...urrent Symbol V(BR)CBO V(BR)CER I CBO Min Typ Max -- -- -1.0 -- -1.0 -- -1.0 2SA778A(K) Min Typ Max -- -- -- -1.0 -1.0 200 -1.0 V V pF MHz n...P.G. tr, tf 5ns PW 5s duty ratio = 50% tstg Test Circuit 510 D.U.T 0.1 2.4 k 50 - -3 V 50 ++ 50...
Description Silicon PNP Epitaxial

File Size 41.66K  /  8 Page

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    2SB1050

PANASONIC[Panasonic Semiconductor]
Part No. 2SB1050
OCR Text ...t) -- IC IC/IB=30 240 fT -- I E VCB=-6V Ta=25C Forward current transfer ratio hFE Ta=75C 500 25C Transition frequency fT (MHz) -10 200 400 160 300 -25C 120 Ta=75C 25C -25C 200 - 0.3 - 0.1 - 0.03 ...
Description Silicon PNP epitaxial planer type(For low-frequency amplification)

File Size 36.25K  /  2 Page

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For ipp Found Datasheets File :: 211637    Search Time::3.672ms    
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