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					STMicroelectronics N.V. EEPROM 意法半导 STMICROELECTRONICS[STMicroelectronics] ST Microelectronics SGS Thomson Microelectronics
Part No.	M24256-B MM24256-BBN5T MM24256-BBN6T MM24256-BDL5T MM24256-BDL6T MM24256-BEA5T MM24256-BEA6T MM24256-BMN5T MM24256-BMN6T MM24256-BRBN5T MM24256-BRBN6T MM24256-BRDL5T MM24256-BRDL6T MM24256-BREA5T MM24256-BREA6T MM24256-BRMN5T MM24256-BRMN6T MM24256-BWBN5T MM24256-BWBN6T MM24256-BWDL5T MM24256-BWDL6T MM24256-BWEA5T MM24256-BWEA6T MM24256-BWMN5T MM24256-BWMN6T M24128-B MM24128-BBN5T MM24128-BBN6T MM24128-BDL5T MM24128-BDL6T MM24128-BEA5T MM24128-BEA6T MM24128-BMN5T MM24128-BMN6T MM24128-BRBN5T MM24128-BRBN6T MM24128-BRDL5T MM24128-BRDL6T MM24128-BREA5T MM24128-BREA6T MM24128-BRMN5T MM24128-BRMN6T MM24128-BWBN5T MM24128-BWBN6T MM24128-BWDL5T MM24128-BWDL6T MM24128-BWEA5T MM24128-BWEA6T MM24128-BWMN5T MM24128-BWMN6T M24256-BV2BN6T M24256-BWMW16T M24128-BR3BN6T M24128-BR3DL6T M24128-BR3DW6T M24128-BR3MN6T M24128-BR3MW16T M24128-BSBN6T M24128-BSDL6T M24128-BSDW6T M24128-BSMN6T M24128-BSMW16T M24128-BV2BN6T M24128-BV2DL6T M24128-BV2DW6T M24128-BV2MN6T M24128-BV2MW16T M24128-BW4BN6T M24128-BW4DL6T M24128-BW4DW6T M24128-BW4MN6T M24128-BW4MW16T M24128-BWBN6T M24128-BWDL6T M24128-BWDW6T M24128-BWMN6T M24128-BWMW16T M24256-BR3BN6T M24256-BR3DL6T M24256-BR3DW6T M24256-BR3MN6T M24256-BR3MW16T M2
Description	32K X 8 I2C/2-WIRE SERIAL EEPROM, PDSO14 256/128 Kbit Serial I C Bus EEPROM With Three Chip Enable Lines 一百二十八分之二百五十六千位串行总线EEPROM，带有集成电路芯片启用三 hdwr ASSY ROD 2-4 MODULES SER 3 hdwr ASSY ROD 1 MODULES SER 3 hdwr NUT FASTENER SER 3 ROD ASSY TOOL HAND NUT DRIVER FOR SER 3 256/128 Kbit Serial I2C Bus EEPROM With Three Chip Enable Lines 256/128 Kbit Serial I?C Bus EEPROM With Three Chip Enable Lines 256/128 Kbit Serial IC Bus EEPROM Without Chip Enable Lines
File Size	116.18K / 19 Page	View it Online	Download Datasheet

					Sony Corporation
Part No.	CXA3201AN
Description	hdwr,HEAT SINK,21MM SQ. BGA,0.35 From old datasheet system RX Gain Control Amplifier
File Size	153.61K / 10 Page	View it Online	Download Datasheet

					ADVANCED MICRO DEVICES INC Advanced Micro Devices, Inc. http://
Part No.	AM29LV008BB70REIB AM29LV008BT70REIB AM29LV008BB-80EC AM29LV008BB-80ECB AM29LV008BB-120EC AM29LV008BB-70RECB AM29LV008BB-70REE AM29LV008BB-120EEB AM29LV008BB-120EI AM29LV008BB-120FC AM29LV008BB-120FCB AM29LV008BB-120FEB AM29LV008BB-120FI AM29LV008BB-120ECB AM29LV008BB-120EIB AM29LV008BB-120FIB AM29LV008BB-70REI AM29LV008BB-70RFC AM29LV008BB70RFEB AM29LV008BT70RFEB AM29LV008BT70RECB AM29LV008BB70RECB AM29LV008BT70RFIB AM29LV008BB70RFIB AM29LV008BT-80EC AM29LV008BT-80EE AM29LV008BT-80EIB AM29LV008BB-80EIB AM29LV008BT-80ECB AM29LV008BB-80EE AM29LV008BB-80EEB AM29LV008BB-70RFEB AM29LV008BT-70REC AM29LV008BT-70REI AM29LV008BB-70RFIB AM29LV008BT70REE
Description	8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位1米8位）的CMOS 3.0伏，只引导扇区闪 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 8兆位米8位）的CMOS 3.0伏，只引导扇区闪 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory 1M X 8 FLASH 3V PROM, 70 ns, PDSO40 hdwr ENDCAP RIGHT FOR SER 3U BLK 8 Megabit (1 M x 8-Bit) CMOS 3.0 Volt-only Boot Sector Flash Memory
File Size	251.82K / 38 Page	View it Online	Download Datasheet

					Alliance Semiconductor, Corp. 时钟及定 ALSC[Alliance Semiconductor Corporation] http:// Alliance Semiconductor ...
Part No.	ASM3P623S00FG-16-TT ASM3I623S00AF-08-SR ASM3I623S00AF-08-ST ASM3I623S00AF-08-TR ASM3I623S00AF-08-TT ASM3I623S00AG-08-SR ASM3I623S00AG-08-ST ASM3I623S00AG-08-TR ASM3I623S00AG-08-TT ASM3I623S00BF-08-SR ASM3I623S00BF-08-ST ASM3I623S00BF-08-TR ASM3I623S00BF-08-TT ASM3I623S00BG-08-SR ASM3I623S00BG-08-ST ASM3I623S00BG-08-TR ASM3I623S00BG-08-TT ASM3I623S00CF-08-SR ASM3I623S00CF-08-ST ASM3I623S00CF-08-TR ASM3I623S00CF-08-TT ASM3I623S00CG-08-SR ASM3I623S00CG-08-ST ASM3I623S00CG-08-TR ASM3I623S00CG-08-TT ASM3I623S00DF-16-SR ASM3I623S00DF-16-ST ASM3I623S00DF-16-TR ASM3I623S00DF-16-TT ASM3I623S00DG-16-SR ASM3I623S00DG-16-ST ASM3I623S00DG-16-TR ASM3I623S00DG-16-TT ASM3I623S00EF-16-SR ASM3I623S00EF-16-ST ASM3I623S00EF-16-TR ASM3I623S00EF-16-TT ASM3I623S00EG-16-SR ASM3I623S00EG-16-ST ASM3I623S00EG-16-TR ASM3I623S00EG-16-TT ASM3I623S00FF-16-SR ASM3I623S00FF-16-ST ASM3I623S00FF-16-TR ASM3I623S00FF-16-TT ASM3I623S00FG-16-SR ASM3I623S00FG-16-ST ASM3I623S00FG-16-TR ASM3I623S00FG-16-TT ASM3P623S00A ASM3P623S00AF-08-SR ASM3P623S00AF-08-ST ASM3P623S00AF-08-TR ASM3P623S00AF-08-TT ASM3P623S00AG-08-ST ASM3P623S00AG-08-TR ASM3P623S00AG-08-TT ASM3P623S00BF-08-SR ASM3P623S00BF-08-ST ASM3P623S00BF-08-TR ASM3P62
Description	Zero Cycle Slip Peak EMI reduction IC hdwr,HEATSINK FOR D2-PAK/TO-263, SMD Zero Cycle Slip Peak EMI reduction IC 3P SERIES, PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 Zero Cycle Slip Peak EMI reduction IC 3I SERIES, PLL BASED CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 Zero Cycle Slip Peak EMI reduction IC 3I SERIES, PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 Zero Cycle Slip Peak EMI reduction IC 3P SERIES, PLL BASED CLOCK DRIVER, 1 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO8 PS EXT MED 10.2W 12V @ 0.85A 3I SERIES, PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 PS EXT MED 10.2W 12V @ 0.85A 3P SERIES, PLL BASED CLOCK DRIVER, 8 TRUE OUTPUT(S), 0 INVERTED OUTPUT(S), PDSO16 Flat / Ribbon Cable; Number of Conductors:10; Pitch Spacing:0.05"; Conductor Size AWG:28; No. Strands x Strand Size:7 x 36; Approval Bodies:UL RoHS Compliant: Yes TOOL POSITIONER FOR 616336 TOOL INSERT PLIER MILITARY PT Dust Cover; For Use With:Anderson Power SB175 Series Connectors; Color:Red Dust Cover; For Use With:Anderson Power SB50 Series Connectors; Color:Red TOOL EXTRACTION #4 CONTACT PLAST PWR SPLY EXT MED 10W 9V @ 1.1A SHIELDED RIBBON CABLE, TWIST N FLAT, 1.27MM TWISTED PAIR, 28AWG, PVC PWR SPLY EXT MED 10W 5V @ 2A
File Size	296.94K / 16 Page	View it Online	Download Datasheet

					意法半导 EEPROM STMicroelectronics N.V.
Part No.	M24C08-W M24C08-R M24C08-WMN6 M24C08-WMN6TP M24C04WMN1T M24C04WMN3T M24C04WMN6T M24C02-WMN3_S M24C02-WMN3G_S M24C02-WMN3P M24C02-WMN3P_S M24C02-WMN3T_S M24C02-WMN3TG_S M24C02-WMN6_W M24C04-WMN6 M24C04-LBN6T M24C04-LBN3T M24C02 M24C01 M24C08 M24C04-LMN3T M24C04-LMN6T M24C08-RBN6 M24C08-RBN3/W M24C08-RBN6/W M24C08-RBN6T M24C08-RBN3P M24C08-RBN3T M24C08-RBN6G M24C08-RBN6/S M24C08-RBN3/S M24C08-RBN3G M24C08-RBN6P M24C16-DW6T M24C16-DW3T M24C16-SDW6T M24C16-SDW3T M24C16-SDS3T M24C16-SDS6T M24C04-WBN6TP/W M24C08-MN6T M24C08-MN3T M24C02-WBN6T/W M24C04-RMN3T/W M24C04-RBN6TP/W M24C04-WBN6TP/S M24C08-WDS3 M24C08-WDS3G M24C08-WDS6 M24C08-WMN6TP/W M24C08-WDW6P M24C04-RMN6TP/S M24C08-WDS6G M24C08-WDS6P M24C08-WDW6G M24C08-WDW3 M24C08-RBN6T/W M24C08-WDW3P M24C08-WDS3/W M24C04-RMN3TP/S M24C08-WDW3G M24C08-WDS3/S M24C01-RBN6TP/W M24C08-WDS3P M24C01-WMN3TP/S M24C01-WDW6TP/S M24C01-WMN6TP/S M24C01-RBN3TP/S M24C04-RBN6T/W M24C04-RDS3G M24C04-WBN6T/W M24C04-RDS6P M24C04-RDW3 M24C04-RDW6 M24C04-WMN6TP/W M24C04-RDS6T M24C04-RDS3T M24C04-RDS6G M24C02-WMN3/S M24C02-WMN6/W M24C08-WBN3G/S M24C16-WBN3G/S M24C16-RBN3G/S M24C01-RBN3G/S M24C01-WBN3G/S M24C02-RBN3G/S M24C02-WBN3G/S M24C04-RBN3G/S M24C04-WBN3G/S
Description	16Kbit, 8Kbit, 4Kbit, 2Kbit and 1Kbit Serial I2C Bus EEPROM Microprocessor Crystal; Frequency:22.1184MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Microprocessor Crystal; Frequency:48MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes CRYSTAL 9.84375MHZ 10PF SMD UHF power transistor NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; G_UM: 7 dB; G_UM @ f1: 7 dB; I_C: 250 mA; P_tot: 250 mW; Polarity: NPN ; VCEO max: 8 V CRYSTALS 20/0.035 -40 85 12.5P 32.768KHZ 3.2X1.5X0.8MM 2 PAD MMIC variable gain amplifier AB 3C 3#12 SKT RECP Microprocessor Crystal; Frequency:8.192MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:8MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:35ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz, with voltage regulator Schottky barrier double diodes - C_d max.: 100@VR=4V pF; Configuration: dual c.a. ; I_F: 1 A; I_FSM max: 10 A; I_R max: 1@VR=25V mA; V_Fmax: 450@IF=1A mV; V_R: 25 V XTL, OSC, 50.000 MHZ, 100PPM Microprocessor Crystal; Frequency:27MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes Schottky barrier diode - C_d max.: 10@VR=1V pF; Configuration: single ; I_F max: 200 mA; I_FSM max: 300 A; I_R max: 2.3@VR=25VA; V_Fmax: 400@IF=10mA mV; V_R max: 30 V CONNECTOR ACCESSORY PNP/PNP matched double transistors IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,SIP AB 17C 17#16 PIN RECP 45 V, 100 mA NPN general-purpose transistors NPN/PNP general purpose transistor - Description: Matched Pair IC,Normally-Open PC-Mount Solid-State Relay,1-CHANNEL,M:ML043MW015 CRYSTAL 4.897MHZ 20PF SMD Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 650 V Thyristors - I_GT: 32 mA; I_T (R_MS): 20 A; V_DRM: 800 V POT 200 OHM 3/4 RECT CERM MT Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 500 V Thyristors logic level for RCD/GFI/LCCB applications - I_GT: 0.2 (min 0.02) mA; I_T (R_MS): 0.8 A; V_DRM: 600 V Microprocessor Crystal; Frequency:50MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:25ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:6MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:40ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes Microprocessor Crystal; Frequency:5MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:50ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; No. of Pins:2 RoHS Compliant: Yes PowerMOS transistor Logic level TOPFET - @ V_IS: 5 V; I_D: 15 A; Number of pins: 3 ; R_DS(on): 0.125 mOhm; V_DSmax: 50 V Solder Masking Agent; Dispensing Method:Jar; Features:For Lead-Free Applications; Used w/Tin/Lead Solders; Provides Short-Term High-Temp. Protection; Leaded Process Compatible:Yes; Volume:1gallon (US) RoHS Compliant: Yes CRYSTAL 6.7458MHZ 20PF SMD Microprocessor Crystal; Frequency:3.579545MHz; Frequency Tolerance:20ppm; Load Capacitance:18pF; Crystal Terminals:Radial Leaded; ESR:180ohm; Leaded Process Compatible:Yes; Mounting Type:Through Hole; Oscillator Type:TCXO RoHS Compliant: Yes RES ARRAY 24 OHM 8TRM 4RES SMD SO8, 1MBIT/S HI SPEED DUAL CHANNEL TRANSISTOR - 15kV/us; Package: SOIC-W; No of Pins: 8; Container: Box NPN 5 GHz wideband transistor - @ f: 1000 MHz; @ f1: 1000 ; @ f2: 2000 ; @ IC: 14 mA; fT: 5 GHz; Frequency: 3 MHz; GUM @ f1: 14 dB; GUM @ f2: 8 dB; Gain @ 900 Mhz: 14 dB; IC: 25 mA; Noise figure: 3@f22.1@f1 dB; Ptot: 300 High-speed switching diodes - Cd max.: 1.5 pF; Configuration: quad c.c./c.c. ; IF max: 250 mA; IFSM max: 4 A; IR max: 500@VR=80V nA; IFRM: 450 mA; trr max: 4 ns; VFmax: 1@IF=50mA mV; VR max: 100 V Thyristors logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 0.8 A; VDRM: 500 V Low-leakage diode - Cd max.: 2 pF; Configuration: single ; IF max: 200 mA; IFSM max: 4 A; IR max: 5@VR=75V nA; IFRM: 500 mA; trr max: 3000 ns; VFmax: 1@IF=10mA mV; VR max: 75 V Low-leakage diode - Cd max.: 4 pF; Configuration: single ; IF max: 250 mA; IFSM max: 4 A; IR max: 1@VR=125V nA; IFRM: 625 mA; trr max: 1500 ns; VFmax: 1@IF=100mA mV; VR max: 125 V NPN 7GHz wideband transistor - @ f: 500 MHz; @ f1: 500 ; @ f2: 800 ; @ IC: 100 mA; fT: 7 GHz; GUM: 16 dB; GUM @ f1: 16 dB; GUM @ f2: 12 dB; IC: 150 mA; Ptot: 1000 mW; Polarity: NPN ; VCE: 10 V; VThyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 650 V NPN 2 GHz RF power transistor - @ f: 1900 MHz; @ f1: 1900 ; GUM: 7 dB; GUM @ f1: 7 dB; IC: 250 mA; Ptot: 250 mW; Polarity: NPN ; VCEO max: 8 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual series ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 10@VR=1V pF; Configuration: single ; IF max: 200 mA; IFSM max: 300 A; IR max: 2.3@VR=25VA; VFmax: 400@IF=10mA mV; VR max: 30 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 8 A; VDRM: 500 V Thyristors - IGT: 32 mA; IT (RMS): 20 A; VDRM: 800 V Schottky barrier double diodes - Cd max.: 100@VR=4V pF; Configuration: dual c.a. ; IF: 1 A; IFSM max: 10 A; IR max: 1@VR=25V mA; VFmax: 450@IF=1A mV; VR: 25 V Schottky barrier diode - Cd max.: 90@VR=0V pF; Configuration: single ; IF: 0.5 A; IFSM max: 2 A; IR max: 0.1@VR=35V mA; VFmax: 550@IF=0.5A mV; VR: 40 V AB 4C 4#12 PIN PLUG Single 12 bits ADC, up to 40 MHz, 55 MHz or 70 MHz Silicon PIN diode NPN 14 GHz wideband transistor PowerMOS transistor Logic level TOPFET - @ VIS: 5 V; ID: 15 A; Number of pins: 3 ; RDS(on): 0.125 mOhm; VDSmax: 50 V hdwr PLATE SER 3 FRNT MNT BLK OSCILLATORS 50PPM 0 70 3.3V 4 33.000MHZ TS 5X7MM 4PAD SMD Thyristors; logic level for RCD/GFI/LCCB applications - IGT: 0.2 (min 0.02) mA; IT (RMS): 1.0 A; VDRM: 600 V Thyristor logic level - IGT: 0.05 mA; IT (RMS): 0.8 A; VDRM: 400 V; VRRM: 400 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 200 V Thyristors logic level - IGT: 0.2 mA; IT (RMS): 0.8 A; VDRM: 400 V 16KbitKbitKbitKbit1Kbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一2 KB的EEPROM的国256位每字举办的串行CMOS Single 10 bits ADC, up to 30 MHz, 40 MHz or 50 MHz 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM 8-Pin SOIC High Speed - 10 MBit/s Logic Gate Output Optocoupler 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国568位每字举办的串行CMOS The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each 该CAT24FC02是一 KB的EEPROM的国256位每字举办的串行CMOS hdwr SPACER REAR MNT SER 3 BLK 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each CAT24FC02是一 KB的EEPROM的国56位每字举办的串行CMOS AB 7C 7#12 PIN PLUG 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM RECTIFIER SBR DUAL 40A 40V 280A-ifsm 530mV-vf 0.5mA-ir ITO-220AB 50/TUBE 16KbitKbitKbitKbitKbit串行I2C总线的EEPROM
File Size	144.80K / 25 Page	View it Online	Download Datasheet

For hdwr Found Datasheets File :: 5+ Page :: | <1> |

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