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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT40WR21
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| Description |
IGBT, 1800 V, 40 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT40QR21
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| Description |
IGBT, 1200 V, 40 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT40RR21
|
| Description |
IGBT, 1350 V, 40 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT40J322
|
| Description |
IGBT, 600 V, 40 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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TOSHIBA[Toshiba Semiconductor]
|
| Part No. |
GT40G121
|
| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT The 4th Generation Current Resonance Inverter Switching Applications
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
|
| File Size |
139.45K /
5 Page |
 View
it Online |
Download Datasheet
|
|
Bom2Buy.com
Price and Availability
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|
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(CHINA HK & SZ)
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| Part: GT40Q321 |
| Maker: TOSHIBA(东芝) |
| Pack: TO-3P |
| Stock: 198 |
| Unit price
for : |
|
50: $2.51 |
|
100: $2.39 |
| 1000:
$2.26 |
|
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