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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30J122A
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| Description |
IGBT, 600 V, 30 A, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30J341
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| Description |
IGBT, 600 V, 33 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30J121
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| Description |
IGBT, 600 V, 30 A, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30J110SRA
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| Description |
IGBT, 1100 V, 60 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30N135SRA
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| Description |
IGBT, 1350 V, 30 A, Built-in Diodes, TO-247
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| Tech specs |
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Official Product Page
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TOSHIBA
|
| Part No. |
GT30J301
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| Description |
Insulated Gate Bipolar Transistor Silicon N Channel IGBT High Power Switching Applications Motor Control Applications
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| File Size |
322.97K /
7 Page |
 View
it Online |
Download Datasheet
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Toshiba Electronic Devices & Storage Corporation |
| Part No. |
GT30J65MRB
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| Description |
IGBT, 650 V, 60 A, Built-in Diodes, TO-3P(N)
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| Tech specs |
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Official Product Page
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Bom2Buy.com
Price and Availability
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JITONG
TECHNOLOGY
(CHINA HK & SZ)
Datasheet.hk's Sponsor |
| Part: GT30J301 |
| Maker: TOSHIBA |
| Pack: TO-3P |
| Stock: Reserved |
| Unit price
for : |
|
50: $2.95 |
|
100: $2.81 |
| 1000:
$2.66 |
|
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