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Cree
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| Part No. |
C5D50065D
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| OCR Text |
...erse characteristics 50 75 100 foward current, i f (a) t j = 75 c t j = 175 c t j = 125 c 0 25 0 0.5 1 1.5 2 2.5 3 3.5 4 foward current, i foward voltage, v f (v) t j = -55 c t j = 25 c i f forward current (a) v f forward voltage (v) v r... |
| Description |
Silicon Carbide Schottky Diode
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| File Size |
737.97K /
6 Page |
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Download Datasheet
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| Part No. |
RB051L-40TE25
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| OCR Text |
...ature : ta(c) average rectified foward current : io(a) 75 100 125 0.5 1.0 1.5 2.0 dc d = 0.8 d = 0.5 d = 0.3 d = 0.2 d = 0.1 d = 0.05 sine io-ta rb161l-40 glass-epoxy substrate if io tp t d = tp/t vr = vrm/2 rb051l-40 application general re... |
| Description |
3 A, 40 V, SILICON, RECTIFIER DIODE
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| File Size |
249.15K /
3 Page |
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it Online |
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DIODES[Diodes Incorporated]
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| Part No. |
NMSD200B01 NMSD200B01-7
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| OCR Text |
...ing Voltage RMS Reverse Voltage foward Continuous Current (Page 1: Note 3) Non-Repetitive Peak foward Surge Current @ t<1.0 s
@ TA = 25C unless otherwise specified Symbol VRRM VRWM VR VR(RMS) IFM IFSM Value 40 28 350 1.5 Unit V V mA A
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| Description |
200 mA SYNCHRONOUS RECTIFIER FEATURING N-MOSFET AND SCHOTTKY DIODE
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| File Size |
169.88K /
8 Page |
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it Online |
Download Datasheet |
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