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Electronic Theatre Controls, Inc.
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| Part No. |
AN-937
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| OCR Text |
...ve vs base drive Enhancement vs depletion N vs P-Channel Max gate voltage Zener diodes on gate? The most important factor in gate drive: the impedance of the gate drive circuit Switching 101 or Understanding the waveforms What happens if ga... |
| Description |
Gate Drive Characteristics and Requirements for HEXFET
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| File Size |
365.72K /
21 Page |
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it Online |
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Vishay Intertechnology,Inc.
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| Part No. |
AN701
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| OCR Text |
...ltage feed-forward compensation depletion mode MOSFET. The 9.2-V threshold has a hysteresis of 300 mV to prevent oscillations when the transition voltage is not clearly defined or when high-line supply impedance is encountered. For applicat... |
| Description |
Designing High-Frequency DC-to-DC Converters With the Si9114A Switchmode Controller
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| File Size |
1,108.56K /
19 Page |
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it Online |
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Clare
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| Part No. |
CPC5603C
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| OCR Text |
depletion Mode FET
www.DataSheet4U.com
Features * Low on resistance 8 ohms * Breakdown voltage 415V minimum * High input impedance * Low input and output leakage * Small package size SOT-223 * PC Card (PCMCIA) Compatible * PCB Space and... |
| Description |
N-Channel depletion Mode FET
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| File Size |
254.29K /
3 Page |
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it Online |
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Dialog Semiconductor
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| Part No. |
IW1697 IW1697-03
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| OCR Text |
...o-load power consumption. using depletion mode nfet as active start-up device) 2.0 description the iw1697 is a high performance ac/dc power supply controller which uses digital control technology to build peak current m... |
| Description |
Low-Power Off-Line Digital Green-Mode PWM Controller
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| File Size |
913.34K /
12 Page |
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it Online |
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Dialog Semiconductor
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| Part No. |
IW1677-01
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| OCR Text |
...with an external active device (depletion mode nfet or npn bjt) provides a fast start-up without compromising no-load power loss. the device directly drives a power bjt and operates in quasi-resonant mode to provide high effciency along w... |
| Description |
Low-Power Off-Line Digital Green-Mode PWM Controller
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| File Size |
752.34K /
16 Page |
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it Online |
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SGS Thomson Microelectronics
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| Part No. |
AN473
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| OCR Text |
... layer and substrate due to the depletion modulation of body-drain junction by the drain-source voltage and not accounted for in the ideal MOSFET model; b) the high non-linearity of the gate-drain capacitance is typical of a MOS structure s... |
| Description |
A NEW APPROACH TO PARAMETER EXTRACTION FOR THE SPICE POWER MOSFET MODEL
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| File Size |
42.97K /
7 Page |
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it Online |
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Price and Availability
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