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  80ns--high Datasheet PDF File

For 80ns--high Found Datasheets File :: 706    Search Time::2.703ms    
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    K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K1208D0C

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K9F8008W0M- K9F8008W0M-TCB0 K9F8008W0M-TIB0 K9K1208D0C
OCR Text ...0s(Max.) - Serial Page Access : 80ns(Min.) * System Performance Enhancement - Ready/ Busy Status Output * Command/Address/Data Multiplexed I...High Voltage Generator Global Buffers CLE ALE WP Figure 2. ARRAY ORGANIZATION 1 Block(=16 ...
Description 64M x 8 Bit / 32M x 16 Bit NAND Flash Memory
1M x 8 bit NAND Flash Memory

File Size 442.73K  /  25 Page

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    K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F1608W0A- K9F1608W0A-TCB0 K9F1608W0A-TIB0 K9F1G08D0M
OCR Text ...0s(Max.) - Serial Page Access : 80ns(Min.) * Fast Write Cycle Time - Program time : 250s(typ.) - Block Erase time : 2ms (typ.) * Command/Add...High Voltage Generator CLE ALE WP Figure 2. ARRAY ORGANIZATION 1 Block(=16 Row) (4K + 128)B...
Description -2M x 8 Bit NAND Flash Memory
128M x 8 Bit / 64M x 16 Bit NAND Flash Memory

File Size 440.97K  /  25 Page

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    OKI
Part No. MS52C1162A MS52C1161A
OCR Text ...ess time : 100nS MAX (Vcc=2.7V) 80nS MAX (Vcc=3.0V) * Common address inputs and data inputs / outputs for SRAM and OTP * Input / Output LVTT...High-Z High-Z DOUT DIN High-Z DOUT DIN High-Z DOUT 2.7V to 3.6V 4.0V Note : 1. * = Don't Ca...
Description 65,536-Word X 16-Bit or 131,072-Word X 8-Bit STATIC RAM 1,048,576-Word X 16-Bit or 2,097,152-Word X 8-Bit One Time PROM
131,072-Word X 8-Bit STATIC RAM 2,097,152-Word X 8-Bit One Time PROM
From old datasheet system

File Size 123.84K  /  18 Page

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    MT28F004B5 MT28F400B5

MICRON[Micron Technology]
Part No. MT28F004B5 MT28F400B5
OCR Text ...g * Address access times: 60ns, 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Auto...HIGH in addition to executing the normal write or erase sequences. This block may be used to store c...
Description FLASH MEMORY

File Size 354.81K  /  32 Page

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    MT28F002B5 MT28F200B5

MICRON[Micron Technology]
Part No. MT28F002B5 MT28F200B5
OCR Text ...g * Address access times: 60ns, 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Auto...HIGH in addition to executing the normal write or erase sequences. This block may be used to store c...
Description FLASH MEMORY

File Size 556.50K  /  31 Page

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    Microsemi, Corp.
Part No. PUMA2E4001MB-12E PUMA2E4001I-12E
OCR Text ...ble access time t oe 0 600 70 0 80ns cs or oe to output float (2) t df 0 600 70 0 80ns output hold from address change t oh 0-0-0 -ns notes:...high (whichever occurs first) to the time when the outputs are no longer driven. t hz and t ohz ar...
Description 128K X 32 EEPROM 5V MODULE, 120 ns, CPGA66 CERAMIC, PGA-66

File Size 363.69K  /  15 Page

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    Electronic Theatre Controls, Inc.
Part No. ES29BDS400D ES29F320D
OCR Text ...vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 9us/ byte, 11us/w...high voltage (12v) ? sector protection / unpr otection ( reset# , a9 ) - hardware method of loc...
Description 32Mbit(4M x 8/2M x 16) CMOS 3.0 Volt-only, Boot Sector Flash Memory 32兆(4米8/2M × 16),3.0伏的CMOS只,引导扇区闪存

File Size 660.31K  /  58 Page

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    http://
Part No. MT28F004B5-1
OCR Text ...5 device  address access time: 80ns  100,000 erase cycles  industry-standard pinouts  inputs and outputs are fully ttl-compatible  auto...high in addition to executing the normal write or erase sequences. this block may be used to store c...
Description FLASH MEMORY

File Size 417.99K  /  32 Page

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    MA4SW610B-1

M/A-COM Technology Solutions, Inc.
Part No. MA4SW610B-1
OCR Text ...tl controlled pin diode driver, 80ns switching speeds are achieved. absolute maximum ratings 1 @ t amb = +25c ( unless otherwise specified ) ma4sw610b-1 layout nominal chip dimensions chip dimensions (mm) x y chip 3370 3120 p...
Description SP6T PIN Diode Switch with Integrated Bias Network 2 - 18GHz

File Size 106.92K  /  6 Page

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    GM71V16163C

Hynix Semiconductor
Part No. GM71V16163C
OCR Text ...)16163cj/clj -8 50 ns 60ns 70ns 80ns 400 mil 42 pin plastic soj 50 ns 60ns 70ns 80ns 400 mil 44(50) pin plastic tsop ii (normal type) gm7...high voltage input low voltage v v v max 3.6 v cc + 0.3 0.8 typ 3.3 - - min 3.0 2.0 -0.3 c c gm71vs...
Description (GM71VS16163CL / GM71V16163C) 1M x 16-Bit CMOS DRAM

File Size 155.00K  /  13 Page

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