80.6-ohm pdf Datasheet P1 Full Text Search --- IC-ON-LINE


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80.6-ohm Datasheet PDF File

For 80.6-ohm Found Datasheets File :: 16971 Search Time::2.141ms
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				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	C67070-A2701-A67 050B17N2 BSM50GB170DN2
OCR Text	... 20 A 72 50 TC = 25 C TC = 80 C Pulsed collector current, tp = 1 ms ICpuls 144 100 TC = 25 C TC = 80 C Power dissipation per I...6 0.4 1.6 6.2 3.9 5.3 V VGE = VCE, IC = 4 mA Collector-emitter saturation voltage VCE(sat)...
Description	IGBT Power Module (Half-bridge Including fast free-wheeling diodes Package with insulated metal base plate) IGBT功率模块（半桥包括快速续流二极管的绝缘金属基片包 From old datasheet system
File Size	111.79K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	CPV364M4K
OCR Text	... Current --- Typ. --- 0.63 1.80 1.80 1.56 --- -13 18 --- --- 1.3 1.2 --- Max. Units Conditions --- V VGE = 0V, IC = 250A --- V/C VGE =...6.0 VCE = VGE , IC = 250A --- mV/C VCE = VGE , IC = 250A --- S VCE = 100V, IC = 10A 250 A VGE = 0V, ...
Description	IGBT SIP MODULE
File Size	269.79K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FDS6680S
OCR Text	...s Trailer Tape 640mm minimum or 80 empty pockets Leader Tape 1680mm minimum or 210 empty pockets July 1999, Rev. B SO-8 Tape and Reel ...6.50 +/-0.10 B0 5.30 +/-0.10 W 12.0 +/-0.3 D0 1.55 +/-0.05 D1 1.60 +/-0.10 E1 1....
Description	30V N-Channel PowerTrench SyncFET⑩
File Size	220.76K / 9 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA100TS120U
OCR Text	... 3 GA100TS120U 120 4.0 80 VCE , Collector-to-Emitter Voltage(V) VGE = 15V 80 us PULSE WIDTH Maximum DC Collector Current(A...6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA100TS12...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	268.82K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA125TS120U
OCR Text	...= 120 W S q u a re w a v e : 80 60 60 % of ra ted vo ltag e I 40 20 Id e a l d io d e s 0 0.1 1 10 100 f, ...6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE , Gate-to-Emitter Voltage (V) Fig. 2...
Description	1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package HALF-BRIDGE IGBT INT-A-PAK
File Size	220.37K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA50TS120U
OCR Text	...-Emitter Voltage(V) V = 15V 80 us PULSE WIDTH GE Maximum DC Collector Current(A) 40 3.0 IC = 100 A IC = 50 A 30 20 ...6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 www.irf.com GA50TS120...
Description	HALF-BRIDGE IGBT INT-A-PAK 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package
File Size	208.85K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	GA75TS120U GA75TS120UPBF
OCR Text	...2 www.irf.com GA75TS120U 80 F o r b o th : 70 60 50 40 30 20 Id e a l d io d e s 10 0 0.1 1 10 LOAD CURRENT (A) D u ty c y ...6.0 7.0 8.0 VCE , Collector-to-Emitter Voltage (V) VGE, Gate-to-Emitter Voltage (V) Fig. 2 ...
Description	Ultra-FastTM Speed IGBT 1200V UltraFast 10-30 kHz Half-Bridge IGBT in a INT-A-Pak package 75 A, 1200 V, N-CHANNEL IGBT
File Size	255.15K / 10 Page	View it Online	Download Datasheet

				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	... -20 0 20 40 60 80 100 120 140 160 TJ, JUNCTION TEMPERATURE (oC) FIGURE 8. DRAIN TO SOURCE ON RESISTANCE vs GATE VO...6 TJ = 25oC TJ = 150oC 10 4 TJ = 150oC 1 TJ = 25oC 2 0 0.1 0 3 6 9 ID, DRAIN...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	...67 53 49 39 0.28 0.34 24 100 80 74 59 S ns ns ns ns nC - 6.6 20 - nC nC 5-2 IRF244, IRF245, IRF246, IRF247 Electrical Specifications PARAMETER Input Capacitance Output Capacitance Reverse-Transfer Capacitance Int...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, N-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ N-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				Samsung semiconductor International Rectifier Intersil Corporation
Part No.	IRF9150
OCR Text	...RENT (A) ID, DRAIN CURRENT (A) -80 VGS = 14V VGS = 12V PULSE DURATION = 80s VGS = 10V 10s -60 VGS = 9V VGS = 8V VGS = 7V 100s...6 -8 -10 VGS, GATE TO SOURCE VOLTAGE (V) -10 0 VDS, DRAIN TO SOURCE VOLTAGE (V) FIGURE 6...
Description	-25A, -100V, 0.150 Ohm, P-Channel Power MOSFET
File Size	56.86K / 7 Page	View it Online	Download Datasheet

For 80.6-ohm Found Datasheets File :: 16971 Search Time::2.141ms
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