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    1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B

Microsemi, Corp.
Motorola Mobility Holdings, Inc.
Motorola Inc
Motorola, Inc.
MOTOROLA[Motorola Inc]
ON Semi
MOTOROLA[Motorola, Inc]
Diotec Elektronische
Part No. 1N5356B 1N5364B 1N5347B 1N5349B 1N5339B 1N5371B 1N5338B 1N5352B 1N5366B 1N5374B 1N5372B 1N5375B 1N5333B 1N5378B 1N5344B 1N5355B 1N5353B 1N5342B 1N5388B 1N5359B 1N5345B 1N5381B 1N5363B 1N5383B 1N5336B ON0008 1N5341B 1N5361B 1N5334B 1N5335B 1N5337B 1N5340B 1N5343B 1N5346B 1N5348 1N5348B 1N5350B 1N5351B 1N5357B 1N5358B 1N5360B 1N5362B 1N5365B 1N5367B 1N5368B 1N5369B 1N5370B 1N5373B 1N5376B 1N5377B 1N5379B 1N5380B 1N5382B 1N5384B 1N5385B 1N5386 1N5386B 1N5387B 1N5333BTHRU1N5388B 1N5354B
OCR Text ... 2 2 2.5 2.5 2.5 2.5 2.5 400 500 500 500 450 400 400 300 200 200 200 200 200 150 125 125 125 100 75 75 300 150 50 10 5 1 1 1 1 10 10...800 1000 1150 1250 1500 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 0.5 35.8 38.8...
Description    5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 16 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 47 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 12 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 3.3 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.3-200 VOLTS 6 V, 5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE
5 WATT ZENER REGULATOR DIODES 3.300 VOLTS 5瓦稳压稳压二极管3.30
MOSFET P-CH 250V 200MA SOT-89
500 mW DO-35 Glass Zener Voltage Regulator Diodes
From old datasheet system
Silicon-Power-Z-Diodes (non-planar technology)

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    22SC5405 2SC5405

PANASONIC[Panasonic Semiconductor]
PanasonicSemiconductor
Panasonic Corporation
Part No. 22SC5405 2SC5405
OCR Text ...0 100 100 Unit A A A V 50 500 0.5 1500 0.7 VCE(sat) VBE(sat) fT ton tstg tf V V 75 0.3 3.5 0.9 MHz s s s *h FE Rank classification P Q Rank hFE 800 to 1500 500 to 1000 1 Power Transistors IC -- VCE ...
Description    Silicon NPN triple diffusion planar type
SiliconNPNtriplediffusionplanartype

File Size 35.55K  /  2 Page

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    2SA1018 2SC1473

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1018 2SC1473
OCR Text ....6mA - 0.5mA - 0.4mA 700 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Collector current IC (mA) 800 -80 -25C -60 -40 -20 0 0 -2 -4 -6 -8 -10 -12 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 Ambient temperature Ta (C...
Description Silicon PNP epitaxial planer type

File Size 35.59K  /  2 Page

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    2SA1034 2SA1035 2SC2406 2SC2405

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1034 2SA1035 2SC2406 2SC2405
OCR Text ... Base current IB (A) -600 -500 -400 -300 -200 -100 0 0 - 0.2 - 0.4 - 0.6 - 0.8 -1.0 Collector current IC (mA) -60 -40 - 0.3 25C - 0.1 Ta=75C -20 -25C - 0.03 - 0.01 -0.1 -0.3 0 0 - 0.4 - 0.8 -1.2 -1.6 -2.0 ...
Description Silicon PNP epitaxial planer type

File Size 50.24K  /  3 Page

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    2SA1083 2SA1084 2SA1085

HITACHI[Hitachi Semiconductor]
Part No. 2SA1083 2SA1084 2SA1085
OCR Text ...follows. E 400 to 800 250 to 500 3 2SA1083, 2SA1084, 2SA1085 Maximum Collector Dissipation Curve Collector power dissipation PC (mW) 600 Collector current IC (mA) -50 -1 Typical Output Characteristics (1) 40 -1 -40 2...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    2SA1122

HITACHI[Hitachi Semiconductor]
Part No. 2SA1122
OCR Text ...hFE B CC 160 to 320 C CD 250 to 500 V(BR)EBO I CBO I EBO hFE* 160 -- -- D CE VCE(sat) VBE V V I C = -10 mA, IB = -1 mA VCE = -12...800 See characteristic curves of 2SA836. 2 2SA1122 Maximum Collector Dissipation Curve Col...
Description Silicon PNP Transistor
Silicon PNP Epitaxial

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    2SA1128

PANASONIC[Panasonic Semiconductor]
Part No. 2SA1128
OCR Text ...a 800 -1.2 Ta=25C 700 -1.0 600 500 400 300 200 100 0 0 20 40 60 80 100 120 140 160 0 0 -1 -2 -3 -4 -5 -6 IB=-10A 2SA1128 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) -100 -30 -10 -3 -1 VCE(sat) -- IC IC/IB=10 ...
Description Silicon PNP epitaxial planer type

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    2SA1171

HITACHI[Hitachi Semiconductor]
Part No. 2SA1171
OCR Text ...ote: Grade Mark hFE D PD 250 to 500 E PE 400 to 800 I CBO hFE* VBE VCE(sat) fT Cob 250 -- -- -- -- V V MHz pF VCE = -12 V, IC = -2 mA I C = -10 mA, IB = -1 mA VCE = -12 V, IC = -2 mA VCB = -25 V, IE = 0, f = 1 MHz 1. The 2SA1171...
Description Silicon PNP Epitaxial

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    2SA1188 2SA1189 2SA1189E 2SA1189D

ZETTLER electronics GmbH
HITACHI[Hitachi Semiconductor]
Part No. 2SA1188 2SA1189 2SA1189E 2SA1189D
OCR Text ...follows. 2. Pulse test D 250 to 500 E 400 to 800 See characteristic curves of 2SA1190 and 2SA1191. 2 2SA1188, 2SA1189 Maximum Collector Dissipation Curve Collector power dissipation Pc (mW) 600 400 200 0 50 100 150 Amb...
Description 5-Pin &#181;P Supervisory Circuits with Watchdog and Manual Reset 5个引amp;#181;带看门狗和手动复位的P监控电路
TRANSISTOR | BJT | PNP | 120V V(BR)CEO | 100MA I(C) | TO-92
Silicon PNP Epitaxial

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