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RFMD
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| Part No. |
RFFM4202
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| OCR Text |
...1 r x v r x g n d g n d 1 2 3 4 5 17 16 15 14 13 24 23 22 21 p d e t v r e g 3 7 8 p d o w n 9 g n d 10 t x i n 11 g n d v b i a s v c c 3 2...5dbm <2.5% dynamic evm ? high impedance power control ? 1 x1 mimo architecture ? integrated 3-stag... |
| Description |
2.4GHz TO 2.5GHz HIGH POWER FRONT END MODULE
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| File Size |
1,338.29K /
15 Page |
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it Online |
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RFMD
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| Part No. |
RFFM4203
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| OCR Text |
...c vcc 3 1 12 2 13 11 10 9 8 7 6 5 4 14 15 16 gnd gnd rffm4203 3.0v to 5.0v, 2.4ghz to 2.5ghz 802.11b/g/n/ac wifi front end module the rffm42...5dbm, 5v <3% dynamic evm ? p out = 19dbm, 3.3v <3% dynamic evm applications ? ieee802.11b/g/n/ac ... |
| Description |
3.0V TO 5.0V / 2.4GHz TO 2.5GHz 802.11b/g/n/ac WiFi FRONT END MODULE
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| File Size |
524.37K /
8 Page |
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it Online |
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Toshiba Corporation
TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM7179-8UL
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| OCR Text |
...N
UNIT MIN. TYP. MAX. dBm 38.5 8.0 -44 39.5 9.0 2.2 35 -47 2.2 2.6 0.6 2.6 80
f = 7.1 - 7.9GHz
add
IM3
dBc A C
VD...5dBm
Frequency (GHz)
Output Power vs. Input Power
42 41 40 39 Po (dBm) 38 37 36 35 34 33 24... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
68.68K /
4 Page |
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it Online |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM6472-45SL
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| OCR Text |
...N. 46.0 7.0 -42 TYP. MAX. 46.5 8.0 9.6 37 -45 10.8 0.8
VDS=10V f = 6.4 to 7.2GHz
Two-Tone Test Po=35.5dbm
(Single Carrier Level)
(VDS X IDS + Pin - P1dB) X Rth(c-c)
Tch
C
100
Recommended Gate Resistance(R... |
| Description |
MICROWAVE POWER GaAs FET
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| File Size |
506.76K /
4 Page |
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it Online |
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TRIQUINT SEMICONDUCTOR INC
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| Part No. |
TQM613017
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| OCR Text |
...s use in mobile phones. the 8 x 5 x 1.52 mm, 22-pin module includes an integrated saw duplexer, power amplifier, transmit filter, rf power ...5dbm the tqm613017 fem meets the strict acpr and altr requirements for products designed to the is... |
| Description |
CDMA PA-Duplexer Module; SE Input w/Coupler, Detector
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| File Size |
403.25K /
17 Page |
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it Online |
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TRIQUINT SEMICONDUCTOR INC
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| Part No. |
TQM613030
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| OCR Text |
... ma quiescent current in lpm 5 ma quiescent current in hpm 80 ma leakage at rx port -32 dbm features ? compact 7.0x4.0x1.1mm...5dbm - - 6.0 s code domain power 5 25oc < t < 60oc 23 - - db
tqm613030 data sheet... |
| Description |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC20
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| File Size |
294.31K /
14 Page |
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it Online |
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RF MICRO DEVICES INC
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| Part No. |
RF7161TR13
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| OCR Text |
...na rx2 rx3 esd protection 78 6 5 4 3 2 122 20 19 18 17 16 15 14 13 12 11 10 9 21 switch amplifier cmos controller rf7161 quad-band gsm850/e...5dbm to 33dbm) maximum output power 33 33.7 dbm nominal conditions. 31 33.7 dbm v batt =3.1v to 4.8v... |
| Description |
TELECOM, CELLULAR, RF AND BASEBAND CIRCUIT, QCC22
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| File Size |
1,214.42K /
20 Page |
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it Online |
Download Datasheet |
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TOSHIBA[Toshiba Semiconductor]
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| Part No. |
TIM5359-45SL
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| OCR Text |
...evel HIGH POWER P1dB=46.5dBm at 5.3GHz to 5.9GHz HIGH GAIN G1dB=9.0dB at 5.3GHz to 5.9GHz BROAD BAND INTERNALLY MATCHED FET HERMETICALLY SEALED PACKAGE
RF PERFORMANCE SPECIFICATIONS
CHARACTERISTICS Output Power at 1dB Gain Compression P... |
| Description |
MICROWAVE SEMICONDUCTOR
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| File Size |
110.62K /
4 Page |
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it Online |
Download Datasheet |
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Price and Availability
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