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MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
BA01232
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| OCR Text |
... f Icqt Ict PAE Pin in ACLR 2Sp/3sp RX noise
**NOTE
Parameter Frequency Idle current Total current Power added efficiency Input Power Return loss Adjacent channel leakage power at 5MHz Adjacent channel leakage power at 10MHz 2nd/3rd har... |
| Description |
The BA01232 is GaAs RF amplifier designed for W-CDMA hand-held phone
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| File Size |
15.62K /
1 Page |
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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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| Part No. |
FA01219A
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| OCR Text |
....5V,VD2=3.5V,VG=-2.5V +100k 2SP 3sp RL (dBc) (dBc) (dBc) (dB) -62.6 -37.5 -49.2 -10.7 -64.1 -37.4 -49.7 -9.4 -64.6 -37.2 -50.2 -8.5
PO,ACP vs Pin CHARACTERISTICS
35 -30 f=925MHz VD1=3.5V VD2=3.5V VG=-2.5V 35
PO,IDs vs Pin CHARACTERST... |
| Description |
GaAs FET HYBRID IC From old datasheet system
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| File Size |
22.92K /
4 Page |
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it Online |
Download Datasheet
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