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  350-400v Datasheet PDF File

For 350-400v Found Datasheets File :: 3059    Search Time::1.578ms    
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    LQR2V821MSEC LQR2V222MSEF LQR2V182MSEF LQR2V102MSEC LQR2V332MSEF LQR2G332MSEF LQR2V332MSEG LQR2G332MSEG LQR2W332MSEG LQR

Nichicon corporation
Part No. LQR2V821MSEC LQR2V222MSEF LQR2V182MSEF LQR2V102MSEC LQR2V332MSEF LQR2G332MSEF LQR2V332MSEG LQR2G332MSEG LQR2W332MSEG LQR2W332MSEH LQR2V123MSEH LQR2G123MSEJ LQR2W123MSEJ LQR2W821MSEC LQR2G822MSEH LQR2G822MSEJ LQR2G222MSEF LQR2W122MSEF LQR2W222MSEF LQR2V822MSEG LQR2W222MSEG LQR2W681MSEC LQR2W682MSEH LQR2W392MSEG LQR2W392MSEH LQR2W392MSEJ LQR2G153MSEJ LQR2G392MSEG LQR2G182MSEF LQR2V103MSEH LQR2G562MSEG LQR2G681MSEC LQR2V153MSEJ LQR2V272MSEG LQR2G103MSEJ LQR2G152MSEF LQR2G272MSEG LQR2G392MSEH LQR2G472MSEH LQR2V103MSEJ LQR2G682MSEH LQR2G821MSEC LQR2G562MSEH LQR2V272MSEF LQR2G472MSEG LQR2V562MSEG LQR2W562MSEG LQR2V562MSEH LQR2W562MSEJ LQR2W152MSEF LQR2W103MSEJ
OCR Text ...Leakage Current - 25 ~ +85C 350 ~ 450V 680 ~ 15000F 20% at 120Hz, 20C After 5 minutes' application of rated voltage, leakage current...400V 1800F) 1 2 3 4 5 6 7 8 9 10 11 12 13 14 Mounting bracket 5 A 2 B 3-leg brackets for ...
Description ALUMINUM ELECTROLYTIC CAPACITORS

File Size 101.46K  /  2 Page

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    Alpha & Omega Semiconductor
Part No. AOK50B60D1
OCR Text ...c =50a 0 50 100 150 200 250 300 350 25 50 75 100 125 150 power disspation (w) t case (c) fig 10 : power disspation as a function of c...400v,r g =6 ? ) td(off) tf td(on) tr 1 10 100 1000 10000 0 20 40 60 80 switching time (ns) r g ( ...
Description IGBT with Anti-Parallel Diode IGBTs

File Size 722.19K  /  9 Page

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    STTH806DTI05 STTH806DTI

STMICROELECTRONICS[STMicroelectronics]
Part No. STTH806DTI05 STTH806DTI
OCR Text .../s) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 60 VR=400V Tj=125C Fig. 6: Reverse recovery charges versus dIF/dt (typical values). Qrr(nC) 140 VR=400V Tj=125...
Description Tandem 600V HYPERFAST BOOST DIODE

File Size 62.88K  /  6 Page

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    STTH806DTI

STMicroelectronics
Part No. STTH806DTI
OCR Text .../s) 0 0 50 100 150 200 250 300 350 400 450 500 Fig. 5: Reverse recovery time versus dIF/dt (typical values). trr(ns) 60 VR=400V Tj=125C Fig. 6: Reverse charges versus dIF/dt (typical values). Qrr(nC) 140 VR=400V Tj=125C 50 ...
Description Tandem 600V HYPERFAST BOOST DIODE

File Size 38.13K  /  5 Page

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    Fairchild Semiconductor Corporation
FAIRCHILD[Fairchild Semiconductor]
Part No. 4N40 4N39
OCR Text ...e Dimensions (Surface Mount) 0.350 (8.89) 0.330 (8.38) 0.270 (6.86) 0.240 (6.10) 3 2 1 PIN 1 ID. 0.270 (6.86) 0.240 (6.10) SEATING PLANE 0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14) 4 5 6 0.070 (1.78) 0.045 (1.1...
Description PHOTO SCR OPTOCOUPLERS

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    APT200GT60JRDL

Microsemi Corporation
Part No. APT200GT60JRDL
OCR Text ...LE V GE APT200GT60JRDL 400 350 13/15V 12V 11V = 15V TJ= 125C TJ= 25C TJ= 150C IC, COLLECTOR CURRENT (A) 300 250 200 150 ...400V RG = 2.2 L = 100H VGE =15V,TJ=125C VGE =15V,TJ=25C 80 60 40 VCE = 400V TJ = 25C, or 1...
Description Resonant Mode Combi IGBT

File Size 263.71K  /  9 Page

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    ST Microelectronics
Part No. STTH16L06CTY
OCR Text ... 16 18 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i f f(av) i=i f f(av) i =0.5 x i f f(av) v =400v t =125c r j 0 50 100 150 200 250 300 350 400 0 50 100 150 200 250 300 350 400 450 500 t (ns) rr di /dt(a/s) f i=i...
Description Automotive Turbo 2 ultrafast high voltage rectifier

File Size 167.47K  /  9 Page

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    ST Microelectronics
Part No. STTH2R06S
OCR Text ... 7 8 9 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i f f(av) i=i f f(av) i =0.5 x i f f(av) v =400v t =125c r j characteristics stth2r06 4/10 doc id 10757 rev 4 figure 5. reverse re...
Description TURBO 2 Ultrafast High Voltage Rectifier

File Size 103.54K  /  10 Page

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    ST Microelectronics
Part No. STTH2R06A STTH2R06U STTH2R06RL
OCR Text ... 7 8 9 0 50 100 150 200 250 300 350 400 450 500 i (a) rm di /dt(a/s) f i =2 x i ff(av) i=i ff(av) i =0.5 x i ff(av) v =400v t =125c r j stth2r06 4/8 figure 7: reverse recovery time versus di f /dt (typical values) figure 8: reverse reco...
Description HIGH EFFICIENCY ULTRAFAST DIODE

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    MICROSEMI[Microsemi Corporation]
Part No. APT100GF60JU2
OCR Text ...utput characteristics (VGE=15V) 350 300 Output Characteristics (VGE=10V) Ic, Collector Current (A) 300 250 200 150 100 50 0 0 Ic, C...400V RG = 5 25 50 75 100 125 150 200 VGE=15V, TJ=125C 150 VGE=15V, TJ=25C 20 100 V...
Description Boost chopper NPT IGBT

File Size 427.54K  /  9 Page

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For 350-400v Found Datasheets File :: 3059    Search Time::1.578ms    
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