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  2banks Datasheet PDF File

For 2banks Found Datasheets File :: 170    Search Time::3.078ms    
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    K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE

Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Part No. K4M56323LE-MS80 K4M56323LE K4M56323LE-EC1H K4M56323LE-EC1L K4M56323LE-EC80 K4M56323LE-EE1H K4M56323LE-EE1L K4M56323LE-EE80 K4M56323LE-EL1H K4M56323LE-EL1L K4M56323LE-EL80 K4M56323LE-EN1H K4M56323LE-EN1L K4M56323LE-EN80 K4M56323LE-ER1H K4M56323LE-ER1L K4M56323LE-ER80 K4M56323LE-ES1H K4M56323LE-ES1L K4M56323LE-ES80 K4M56323LE-MC1H K4M56323LE-MC1L K4M56323LE-MC80 K4M56323LE-ME1H K4M56323LE-ME1L K4M56323LE-ME80 K4M56323LE-ML1H K4M56323LE-ML1L K4M56323LE-MN1H K4M56323LE-MN1L K4M56323LE-MN80 K4M56323LE-MR1H K4M56323LE-MR1L K4M56323LE-MR80 K4M56323LE-MS1H K4M56323LE-MS1L K4M56323LE-ML80
OCR Text ...2V -S/R Internal TCSR 4Banks 2banks 1Bank 3 6 NOTES: 1. Measured with outputs open. 2. Refresh period is 64ms. 3. Internal TCSR can be supported. In commercial Temp : Max 40C/Max 70C, In extended Temp : Max 40C/Max 85C 4. K4M563...
Description 2M x 32Bit x 4 Banks Mobile SDRAM in 90FBGA 2米x 32Bit的4银行0FBGA移动SDRAM
RES 180K 5% 0603
Surface Mount Resistors Thick Film Chip Resistors

File Size 139.56K  /  12 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
SAMSUNG SEMICONDUCTOR CO. LTD.
Part No. KMM366S403CTL-G0 KMM366S403CTL
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V 3 2 CAS Latency PC66 SDRAM MODULE Version -0 800 16 16 240 Unit Note Operating current (One bank active) Precharge standby current in power...
Description PC66 SDRAM MODULE

File Size 161.87K  /  11 Page

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    Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. PC100 KMM366S1623CT-G8 KMM366S1623CT-GH KMM366S1623CT-GL
OCR Text ...re stable IOL = 0 mA Page burst 2banks activated tCCD = 2CLKs tRC tRC(min) CKE 0.2V 3 2 920 760 mA 96 32 32 320 160 760 760 2,000 16 760 mA 720 mA mA 2 1 mA mA mA Active standby current in non power-down mode (One bank active) ...
Description PC100 SDRAM MODULE Preliminary 初步PC100的内存模

File Size 151.42K  /  10 Page

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    Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. S8S3122X16-TCR2 S8S3122X16 S8S3122X16-TCR1 DSS8S3122X16
OCR Text ...are stable Io = 0 mA Page Burst 2banks Activated tCCD = 2CLKs Active Standby Current in non power-down mode (One Bank Active) Operating Current (Burst Mode) ICC4 2 Refresh Current Self Refresh Current ICC5 ICC6 tRCtRC(m...
Description 256K x 16 SDRAM

File Size 1,160.65K  /  44 Page

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    TMT[Taiwan Memory Technology]
Part No. T431616B-20S T431616B T431616B-10C T431616B-10S T431616B-20C
OCR Text ... 1M x 16 SDRAM 512K x 16bit x 2banks Synchronous DRAM GRNERAL DESCRIPTION The T431616B is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technol...
Description 1M x 16 SDRAM 512K x 16bit x 2banks Synchronous DRAM

File Size 564.16K  /  31 Page

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    TMT[Taiwan Memory Technology]
Part No. T431616C-7SG T431616C T431616C-6S T431616C-6SG T431616C-7S
OCR Text ... 1M x 16 SDRAM 512K x 16bit x 2banks Synchronous DRAM GRNERAL DESCRIPTION The T431616C is 16,777,216 bits synchronous high data rate Dynamic RAM organized as 2 x 524,288 words by 16 bits , fabricated with high performance CMOS technol...
Description 1M x 16 SDRAM 512K x 16bit x 2banks Synchronous DRAM

File Size 714.58K  /  30 Page

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    TTS3816B4E-7 TTS3816B4E TTS3816B4E-6 TTS3816B4E-6A TTS3816B4E-6B TTS3816B4E-6C TTS3816B4E-6D TTS3816B4E-6E

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. TTS3816B4E-7 TTS3816B4E TTS3816B4E-6 TTS3816B4E-6A TTS3816B4E-6B TTS3816B4E-6C TTS3816B4E-6D TTS3816B4E-6E
OCR Text ... are stable IOL=0 mA Page burst 2banks activated tCCD = 2CLKS tRCtRC(min) CL = 3 CL = 2 5 Active standby current in non power-down mode (One bank active) ICC3N 40 mA 20 150 mA 140 mA 2 1 ICC3NS Operating current (Burst mod...
Description 2M x 16Bit x 4 Banks synchronous DRAM

File Size 264.19K  /  8 Page

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    VS133-R512

Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
Part No. VS133-R512
OCR Text ...8Bytes 256Bytes SDR SDRAM 13 10 2banks 72bits LVTTL 7.5ns (CL=3) 5.4ns (CL =3) ECC 7.8s x8bit x8bit 1CLK Burst Lengths (1,2,4,8,FULL) 4Banks CAS Latency =2,3 CS Latency =0 WE Latency =0 Registered with PLL Supports Write1/Read Burst Support...
Description Memory Module

File Size 121.80K  /  7 Page

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    KMM374S403CT

Samsung semiconductor
Part No. KMM374S403CT
OCR Text ...e stable I OL = 0 mA Page Burst 2banks Activated t CCD = 2CLKs tRCtRC(min) CKE0.2V mA Active Standby Current in non power-down mode (One Bank Active) Operating Current (Burst Mode) Refresh Current Self Refresh Current ICC4 IC...
Description PC100 SDRAM MODULE

File Size 148.77K  /  11 Page

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    M52D32321A-10BG M52D32321A-7.5BG

Elite Semiconductor Memory Technology Inc.
Part No. M52D32321A-10BG M52D32321A-7.5BG
OCR Text ...9 ESMT SDRAM 512K x 32Bit x 2banks M52D32321A Synchronous DRAM FEATURES 1.8V power supply LVCMOS compatible with multiplexed address Dual banks operation MRS cycle with address key programs CAS Latency (1, 2 & 3 ) Burst Length (...
Description 512K x 32Bit x 2banks Synchronous DRAM

File Size 688.18K  /  29 Page

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