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  256m-p Datasheet PDF File

For 256m-p Found Datasheets File :: 367    Search Time::1.953ms    
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    K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608D0C K9F5608D0C-D K9F5608D0C-H K9F5608D0C-P K9F5608D0C-Y K9F5616U0C-Y K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-H K9F5608U0C K9F5608U0C-D K9F5608U0C-F K9F5608U0C-H K9F5608U0C-P K9F5608U0C-V K9F5608U0C-Y K9F5616D0C K9F5616D0C-D K9F5616D0C-H K9F5616D0C-P K9F5616D0C-Y K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-H K9F5616U0C K9F5616U0C-D K9F5616U0C-H K9F5616U0C-P K9F5616Q0C-HCB0 K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-HIB0
OCR Text ...or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V, 2.65V, 3.3V Vcc. Its NAND cell provides ...P,V,F or K9F5608D0C_Y,P During Read(Busy) on the devices except On K9F5608U0C_Y,P,V,F or K9F5608D0C...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 679.73K  /  42 Page

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    K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FC

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0B-DCB0 K9F5608Q0B-DIB0 K9F5608Q0B-HCB0 K9F5608Q0B-HIB0 K9F5608U0B K9F5608U0B-DCB0 K9F5608U0B-DIB0 K9F5608U0B-FCB0 K9F5608U0B-FIB0 K9F5608U0B-HCB0 K9F5608U0B-HIB0 K9F5608U0B-PCB0 K9F5608U0B-PIB0 K9F5608U0B-VCB0 K9F5608U0B-VIB0 K9F5608U0B-YCB0 K9F5608U0B-YIB0 K9F5616U0B-DCB0 K9F5616U0B-DIB0 K9F5616U0B-HCB0 K9F5616U0B-HIB0 K9F5616U0B-PCB0 K9F5616U0B-PIB0 K9F5616U0B-YCB0 K9F5616U0B-YIB0 K9F5616Q0B-DCB0 K9F5616Q0B-DIB0 K9F5616Q0B-HCB0 K9F5616Q0B-HIB0
OCR Text ...or 16Mx16bit, the K9F56XXX0B is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the m...P or K9F5608U0B_V,F During Read(Busy) on the devices except K9F5608U0B_Y,P and K9F5608U0B_V,F During...
Description 32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
32M x 8 Bit , 16M x 16 Bit NAND Flash Memory

File Size 601.33K  /  34 Page

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    K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9F5608Q0C K9F5608Q0C-D K9F5608Q0C-DCB0 K9F5608Q0C-DIB0 K9F5608Q0C-H K9F5608Q0C-HCB0 K9F5608Q0C-HIB0 K9F5608U0C K9F5608U0C-D K9F5608U0C-DCB0 K9F5608U0C-DIB0 K9F5608U0C-F K9F5608U0C-FCB0 K9F5608U0C-FIB0 K9F5608U0C-H K9F5608U0C-HCB0 K9F5608U0C-HIB0 K9F5608U0C-P K9F5608U0C-PCB0 K9F5608U0C-PIB0 K9F5608U0C-V K9F5608U0C-VCB0 K9F5608U0C-VIB0 K9F5608U0C-Y K9F5608U0C-YCB0 K9F5608U0C-YIB0 K9F1208Q0A K9F5616U0C K9F5616U0C-D K9F5616U0C-DCB0 K9F5616U0C-DIB0 K9F5616U0C-H K9F5616U0C-HCB0 K9F5616U0C-HIB0 K9F5616U0C-P K9F5616U0C-PCB0 K9F5616U0C-PIB0 K9F5616U0C-Y K9F5616U0C-YCB0 K9F5616U0C-YIB0 K9F5616Q0C K9F5616Q0C-D K9F5616Q0C-DCB0 K9F5616Q0C-DIB0 K9F5616Q0C-H K9F5616Q0C-HCB0 K9F5616Q0C-HIB0 K9F1208Q0A-XXB0 K9F5608D0C-H K9F5608D0C-D K9F5608D0C-Y K9F5608D0C-P K9F5608U0M
OCR Text ...or 16Mx16bit, the K9F56XXX0C is 256M bit with spare 8M bit capacity. The device is offered in 1.8V or 3.3V Vcc. Its NAND cell provides the m...P or K9F5608U0C_V,F During Read(Busy) on the devices except K9F5608U0C_Y,P and K9F5608U0C_V,F During...
Description 32M x 8 Bit NAND Flash Memory
32M x 8 Bit / 16M x 16 Bit NAND Flash Memory
512Mb/256Mb 1.8V NAND Flash Errata

File Size 653.97K  /  39 Page

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    EDS2504ACTA EDS2504ACTA-75 EDS2504ACTA-7A EDS2504APTA-75 EDS2504APTA-75L EDS2504APTA-7A EDS2504APTA-7AL EDS2508ACTA EDS2

ELPIDA[Elpida Memory]
Part No. EDS2504ACTA EDS2504ACTA-75 EDS2504ACTA-7A EDS2504APTA-75 EDS2504APTA-75L EDS2504APTA-7A EDS2504APTA-7AL EDS2508ACTA EDS2508ACTA-75 EDS2508ACTA-7A EDS2508APTA EDS2508APTA-75 EDS2508APTA-75L EDS2508APTA-7A EDS2508APTA-7AL EDS2516ACTA EDS2516ACTA-75 EDS2516ACTA-7A EDS2516APTA EDS2516APTA-75 EDS2516APTA-75L EDS2516APTA-7A EDS2516APTA-7AL
OCR Text 256M bits SDRAM EDS2504ACTA, EDS2504APTA (64M words x 4 bits) EDS2508ACTA, EDS2508APTA (32M words x 8 bits) EDS2516ACTA, EDS2516APTA (16M w...P 64M x 4 32M x 8 16M x 16 P 64M x 4 32M x 8 16M x 16 4 133 Internal Banks 4 Clock frequency MHz (ma...
Description 256M bits SDRAM

File Size 544.49K  /  51 Page

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    EDS2504APTA EDS2504APTA-75TI EDS2504APTA-7ATI EDS2504APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2508APTA-TI EDS2516APT

ELPIDA[Elpida Memory]
Part No. EDS2504APTA EDS2504APTA-75TI EDS2504APTA-7ATI EDS2504APTA-TI EDS2508APTA-75TI EDS2508APTA-7ATI EDS2508APTA-TI EDS2516APTA-75TI EDS2516APTA-7ATI EDS2516APTA-TI
OCR Text 256M bits SDRAM WTR (Wide Temperature Range) EDS2504APTA-TI (64M words x 4 bits) EDS2508APTA-TI (32M words x 8 bits) EDS2516APTA-TI (16M wo...P Organization (words x bits) 64M x 4 32M x 8 16M x 16 Internal Banks 4 Clock frequency MHz (max.) 1...
Description 256M bits SDRAM WTR (Wide Temperature Range)

File Size 529.59K  /  51 Page

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    EDS2508APSA EDS2508APSA-75 EDS2508APSA-75L EDS2508APSA-7A EDS2508APSA-7AL EDS2516APSA EDS2516APSA-75 EDS2516APSA-75L EDS

ELPIDA[Elpida Memory]
Part No. EDS2508APSA EDS2508APSA-75 EDS2508APSA-75L EDS2508APSA-7A EDS2508APSA-7AL EDS2516APSA EDS2516APSA-75 EDS2516APSA-75L EDS2516APSA-7A EDS2516APSA-7AL
OCR Text 256M bits SDRAM EDS2508APSA (32M words x 8 bits) EDS2516APSA (16M words x 16 bits) Description The EDS2508AP is a 256M bits SDRAM organiz...P A6 A5 A2 A1 R VSS A4 A3 VDD (Top view) Note: ( )* marked pins are for EDS2508APSA. A0 t...
Description 256M bits SDRAM

File Size 539.53K  /  51 Page

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    HM5225325F-B60 HM5225645F HM5225645F-B60

http://
HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5225325F-B60 HM5225645F HM5225645F-B60
OCR Text 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM ADE-203-1014C (Z) Rev. 1.0 Oct. 1,...P R T U DQ MB0 DQ6 CLK VCC DQ MB2 DQ8 DQ9 VSS DQ22 DQ23 DQ24 CAS DQ MB1 DQ7 DQ MB3 D...
Description 256M LVTTL interface SDRAM 100 MHz 1-Mword x 64-bit x 4-bank/2-Mword x 32-bit x 4-bank PC/100 SDRAM

File Size 76.58K  /  16 Page

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    TH58NVG1S3AFT TH58NVG1S3AFT05

TOSHIBA[Toshiba Semiconductor]
Part No. TH58NVG1S3AFT TH58NVG1S3AFT05
OCR Text 256M DESCRIPTION 8BITS) CMOS NAND E2PROM The TH58NVG1S3A is a single 3.3-V 2G-bit (2,214,592,512 bits) NAND Electrically Erasable and ...P-1220-0.50 (Weight : 0.53 g typ.) PIN ASSIGNMENT (TOP VIEW) NC NC NC NC NC GND RY/BY RE CE NC N...
Description Flash - NAND
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS

File Size 364.12K  /  32 Page

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    K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4C560838C-TCD3 K4C561638C-TCD3 K4C561638C-TCD4000 K4C561638C-TCDA K4C560838C-TCD4 K4C560838C-TCDA K4C561638C-TCD4
OCR Text ...-DRAM 4. Density & Refresh 56 : 256M 8K/64ms 5. Organization 08 : x8 16 : x16 8. Version C : 4th Generation 9. Package T : TSOP II (400mil x...P-400-0.65) -4- REV. 0.7 Aug. 2003 K4C5608/1638C Pin Names Pin A0 to A14 BA0, BA1 DQ0 to ...
Description 256Mb Network-DRAM

File Size 877.29K  /  42 Page

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    K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K9W4G08U1M K9K2G16U0M K9W4G16U1M K9K2G08Q0M K9K2G08U0M K9K2G16Q0M K9K2G08Q0M-P
OCR Text 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory Revision History Revision No 0.0 0.1 History 1. Initial issue 1. IOL(R/B) of 1.8V devic...P K9K2G16Q0M-Y,P K9XXG08UXM-Y,P,K,E K9XXG16UXM-Y,P,K,E K9K2G08U0M-V,F 2.7 ~ 3.6V Vcc Range 1.7 ~ 1.9...
Description 256M x 8 Bit / 128M x 16 Bit NAND Flash Memory

File Size 637.45K  /  40 Page

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