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Motorola
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| Part No. |
MRF21180
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| OCR Text |
... mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.1 db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 850 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 19 22 % third order intermodul... |
| Description |
MRF21180, MRF21180S 2170 MHz, 170 W, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
372.35K /
12 Page |
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NXP Semiconductors N.V.
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| Part No. |
BLF6G22LS-40P BLF6G22L-40P
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| OCR Text |
... mhz; f 3 = 2162.5 mhz; f 4 = 2167.5 mhz; rf performance at v ds = 28 v; i dq = 410 ma; t case = 25 ? c; in a class-ab production test circuit. symbol parameter conditions min typ max unit g p power gain p l(av) = 13.5 w [1] 17.8 19... |
| Description |
Power LDMOS transistor BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;BLF6G22LS-40P<SOT1121B (CDFM4)|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
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| File Size |
151.37K /
16 Page |
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it Online |
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Motorola
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| Part No. |
MRF5S21150
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| OCR Text |
...5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 11 12.5 ? db drain efficiency (v dd = 28 vdc, p out = 33 w avg., i dq = 1300 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25 ? % third order intermodulat... |
| Description |
MRF5S21150, MRF5S21150R3, MRF5S21150S, MRF5S21150SR3 2170 MHz, 33 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
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| File Size |
397.08K /
12 Page |
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it Online |
Download Datasheet |
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Motorola Mobility Holdings, Inc.
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| Part No. |
MRF5P21180 MRF5P21180R6
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| OCR Text |
... mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order interm... |
| Description |
MRF5P21180 2170 MHz, 38 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFET
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| File Size |
401.00K /
8 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
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| Part No. |
MRF5P21180R6
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| OCR Text |
... mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) g ps 12.5 14 ? db drain efficiency (v dd = 28 vdc, p out = 38 w avg., i dq = 2 x 800 ma, f1 = 2112.5 mhz, f2 = 2122.5 mhz and f1 = 2157.5 mhz, f2 = 2167.5 mhz) 23 25.5 ? % third order interm... |
| Description |
2170 MHz, 38 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
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| File Size |
538.64K /
8 Page |
View
it Online |
Download Datasheet |
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