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  2100v Datasheet PDF File

For 2100v Found Datasheets File :: 47    Search Time::1.062ms    
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    DCR4330M45 DCR4330M50 DCR4330M52

Dynex Semiconductor
Part No. DCR4330M45 DCR4330M50 DCR4330M52
OCR Text ... - 1A/s, C, VRpeak ~3100V, VR ~ 2100v 4030 5420 C IRR Reverse recovery current 49 59 A IL Latching current Tj = 25 VD = 5V C, - 3 A IH Holding current Tj = 25 RG-K = , ITM = 500A, IT = 5A C...
Description Phase Control Thyristor

File Size 241.48K  /  10 Page

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    NTE2593

NTE Electronics
Part No. NTE2593
OCR Text 2100v Min D Low Output Capacitance D Wide ASO Range D Isolated TO220 Type Package Absolute Maximum Ratings: (TC = +25C unless otherwise specified) Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ...
Description Silicon NPN Transistor High Voltage Amp/Switch

File Size 20.55K  /  2 Page

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    DCR3990A45 DCR3990A50 DCR3990A52

Dynex Semiconductor
Part No. DCR3990A45 DCR3990A50 DCR3990A52
OCR Text ... - 1A/s, C, VRpeak ~3100V, VR ~ 2100v 4030 5420 C IRR Reverse recovery current 49 59 A IL Latching current Tj = 25 VD = 5V C, - 3 A IH Holding current Tj = 25 RG-K = , ITM = 500A, IT = 5A C...
Description Phase Control Thyristor

File Size 235.60K  /  10 Page

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    2SC4710LS 0929

Sanyo Semicon Device
Part No. 2SC4710LS 0929
OCR Text 2100v / 10mA High-Voltage Amplifier, High-Voltage Switching Applications Features * * * * * Package Dimensions unit : mm 2079D [2SC4710LS] 10.0 3.2 4.5 2.8 High breakdown voltage(VCEO min=2100v). Small Cob(typical Cob=1.3pF). Wid...
Description NPN Triple Diffused Planar Silicon Transistor 2100v / 10mA High-Voltage Amplifier, High-Voltage Switching Applications
From old datasheet system
2100v/10mA High-Voltage Amplifier,High-Voltage Switching Applications

File Size 29.37K  /  3 Page

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    DCR1950C48 DCR1950C50 DCR1950C52

Dynex Semiconductor
Part No. DCR1950C48 DCR1950C50 DCR1950C52
OCR Text ...5 o c, v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) reverse recovery charge, i rr - (a) i rrmax ...
Description Phase Control Thyristor

File Size 193.36K  /  10 Page

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    2SC4709

Sanyo Semicon Device
Toshiba Semiconductor
Part No. 2SC4709
OCR Text ...igh breakdown voltage (VCEO min=2100v). * Small Cob (Cob typ=1.3pF). * Wide ASO. * High reliability (Adoption of HVP process). Package Dimensions unit:mm 2010C [2SC4709] 10.2 3.6 5.1 2.7 6.3 4.5 1.3 18.0 5.6 1.2 14.0 15...
Description NPN Triple Diffused Planar Silicon Transistor High-Voltage Amplifier, High-Voltage Switching Applications
High-Voltage Amplifier/ High-Voltage Switching Applications

File Size 98.35K  /  3 Page

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    DCR1850L50 DCR1850L48 DCR1850L52

Dynex Semiconductor
Part No. DCR1850L50 DCR1850L48 DCR1850L52
OCR Text ...5 o c, v rpeak ~ 3100v v rm ~ 2100v snubber as appropriate to control reverse volts 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 rate of decay of on-state current, di/dt - (a/us) reverse recovery charge, i rr - (a) i rrmax ...
Description Phase Control Thyristor

File Size 192.00K  /  10 Page

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