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  20mw Datasheet PDF File

For 20mw Found Datasheets File :: 761    Search Time::1.203ms    
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    S-AU68L

Toshiba Semiconductor
Part No. S-AU68L
OCR Text ... T VSWRin HRM -- VGG = 4V, Pi = 20mw ZG = ZL = 50 TEST CONDITION -- VDD = 9.6V VDD = 6.0V MIN. 400 7 2.7 35 -- -- TYP. -- -- -- -- -- -- MAX. 420 -- -- -- 5.0 -25 UNIT MHz W % -- dB -- VDD = 9.6V, Pi = 20mw Po = 7W (VGG = adjust) ZG = ZL...
Description UHF BAND FM POWER AMPLIFIER MODULE

File Size 125.95K  /  4 Page

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    MAX9722BEUE MAX9722B MAX9722A MAX9722AETE MAX9722AEUE MAX9722BETE

MAXIM - Dallas Semiconductor
Maxim Integrated Products
Part No. MAX9722BEUE MAX9722B MAX9722A MAX9722AETE MAX9722AEUE MAX9722BETE
OCR Text ...125mW, f = 1kHz RL = 32, POUT = 20mw, f = 22Hz to 22kHz 22Hz to 22kHz bandwidth, input AC grounded MIN TYP 0.03 0.009 100 6 0.5 200 600 78 8 145 5 800 MAX UNITS % dB VRMS V/s pF kHz dB kV C C MAX9722A/MAX9722B Note 1: Note 2: Note 3: ...
Description 5V, Differential-Input, DirectDrive, 130mW Stereo Headphone Amplifiers with Shutdown
5V, DIFFERENTIAL INPUT, DIRECTDRIVE, 130MW STEREO HEADPHONE AMPLIFIERS WITH SHUTDOWN

File Size 615.23K  /  20 Page

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    S-AU68M

Toshiba Semiconductor
Part No. S-AU68M
OCR Text ...EST CONDITION -- VGG = 4V, Pi = 20mw ZG=ZL=50 VDD = 9.6V, Pi = 20mw Po = 7W (VGG = adjust) ZG = ZL = 50 VDD = 15V, Pi = 20mw Po = 7W (VGG = adjust) VSWR LOAD 20: 1 ALL PHASE VDD = 3.5~15.7V, VGG = 0~4V Po<12W, Pi = 20mw VSWR LOAD 3: 1 ALL P...
Description UHF BAND FM POWER AMPLIFIER MODULE

File Size 126.27K  /  4 Page

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    RA07M2127M06 RA07M2127M-101 RA07M2127M

MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA07M2127M06 RA07M2127M-101 RA07M2127M
OCR Text ...ut>7W @ VDD=7.2V, VGG=3.5V, Pin=20mw * T>45% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=20mw * Broadband Frequency Range: 215-270MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is p...
Description RoHS Compliance ,215-270MHz 7W 7.2V, 2Stage Amp. For PORTABLE RADIO

File Size 90.50K  /  8 Page

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    DL-4038-025

Sanyo Electric Co.,Ltd.
Sanyo Semicon Device
Part No. DL-4038-025
OCR Text ...ating voltage : 635 nm (Typ.) : 20mw CW : Ith = 45 mA (Typ.) : Vop = 2.3 V (Typ.) 1 2 3 Top view 1.00.1 0.450.1 1.50.1 o1.4max. 3- o0.450.1 2.450.15 0.3 LD facet 5.00.3 101.0 Absolute Maximum Ratings at Tc=25C Parame...
Description High Power AlGaInP Laser Diode(大功率AlGaInP激光二极管)
Red Laser Diode High Power AlGaInP Laser Diode

File Size 65.04K  /  3 Page

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    RA08N1317M RA08N1317M-01 RA08N1317M-E01

Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. RA08N1317M RA08N1317M-01 RA08N1317M-E01
OCR Text ...ut>8W @ VDD=9.6V, VGG=3.5V, Pin=20mw * T>50% @ Pout=8W (V GG control), VDD=9.6V, Pin=20mw * Broadband Frequency Range: 135-175MHz * Low-Power Control Current IGG=1mA (typ) at VGG=3.5V * Module Size: 30 x 10 x 5.4 mm * Linear operation is po...
Description Anti-Static Storage Bags; External Height:6"; External Width:4"; Features:Zipper closure, amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
Anti-Static Storage Bags; External Height:10"; External Width:6"; Features:Zipper closure, Amine-free, noncorrosive; Material:Vapor-Coated Alum. Shield Bonded between Polyester Outer & Polyethylene Inner Layers RoHS Compliant: NA
135-175MHz 8W 9.6V PORTABLE RADIO

File Size 61.86K  /  9 Page

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For 20mw Found Datasheets File :: 761    Search Time::1.203ms    
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