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HYNIX SEMICONDUCTOR INC
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Part No. |
HY5DU283222Q-55
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OCR Text |
...m 3clks to 4clks at 200/183mhz jun. 2001 0.5 1) removed 166mhz part from speed bin 2) defined idd specification 3) defined ac parameters of 250mhz part 4) changed pin capacitance a) input clock capacitance : changed from 2/3pf ... |
Description |
4M X 32 DDR DRAM, 0.9 ns, PQFP100
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File Size |
333.51K /
27 Page |
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TE Connectivity, Ltd.
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Part No. |
HY5DU283222Q-45
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OCR Text |
...ed from 0.75ns to 0.45ns at 200/183mhz b) tDS/tDH : Changed from 0.5ns to 0.45ns
3. Revision 0.6 (Oct. 01)
1) Changed VIH/VIL from Vref +/- 0.35V to Vref +/- 0.45V 2) Change tCK_max from 5.5ns to 6ns at 250/222Mhz and from 10ns to 7ns a... |
Description |
DDR Synchronous DRAM DDR同步DRAM
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File Size |
271.91K /
27 Page |
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it Online |
Download Datasheet |
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Infineon SIEMENS AG
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Part No. |
HYB39S64160AT HYB39S64160BT HYB39S64160BT-7
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OCR Text |
...4160at-5.5 p-tsopii-54 (400mil) 183mhz 4b x 1mb x 16 sdram a1-die hyb 39s64160at-6 p-tsopii-54 (400mil) 166mhz 4b x 1mb x 16 sdram a1-die hyb 39s64160at-7 p-tsopii-54 (400mil) 143mhz 4b x 1mb x 16 sdram a1-die hyb 39s64160bt-5.5 p-tsopii-5... |
Description |
64M SDRAM Component 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4× 1M× 16)同步动态RAM(用于高速图形场合)) 4M x 16 MBit Synchronous DRAM for High Speed Graphics Applications(64M4M x 16)同步动态RAM(用于高速图形场合))
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File Size |
119.50K /
18 Page |
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it Online |
Download Datasheet |
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Price and Availability
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