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HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
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Part No. |
IRF234 IRF235 IRF236 IRF237
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OCR Text |
...2, RL = 1.1 VGS = 10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature 2.9 -
0.32 0.48 4.3 9...8.1 32
UNITS A A
S
Source to Drain Diode Voltage (Note 2) Reverse Recovery Time Reverse Rec... |
Description |
8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ N-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, N-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-204AA
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File Size |
68.51K /
7 Page |
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it Online |
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Intersil, Corp. INTERSIL[Intersil Corporation]
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Part No. |
IRF9540 RF1S9540SM FN2282
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OCR Text |
... RL = 2.3, VGS = -10V, (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -19A, VDS = 0.8 x Rated BVDSS, Ig(REF) = -1.5mA (Figures 14, 19, 20) Gate Charge is Essentially Independent... |
Description |
19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB 19A, 100V, 0.200 Ohm, P-Channel Power MOSFETs 19 A, 100 V, 0.2 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-263AB 19A/ 100V/ 0.200 Ohm/ P-Channel Power MOSFETs From old datasheet system
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File Size |
59.17K /
7 Page |
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it Online |
Download Datasheet |
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INTERSIL[Intersil Corporation]
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Part No. |
IRF9620 FN2283
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OCR Text |
... = 20 for BVDSS = 150V (Figures 17, 18) MOSFET Switching Times are Essentially Independent of Operating Temperature VGS = -10V, ID = -3.5A, VDS = 0.8 x Rated BVDSS, IG(REF) = 1.5mA, (Figures 14, 19, 20) Gate Charge is Essentially Independen... |
Description |
3.5A/ 200V/ 1.500 Ohm/ P-Channel Power MOSFET 3.5A, 200V, 1.500 Ohm, P-Channel Power MOSFET 3.5A 200V 1.500 Ohm P-Channel Power MOSFET From old datasheet system
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File Size |
57.96K /
7 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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