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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ..., Gate-to-Source Voltage (V) 10000 8 Ciss 6 1000 Coss 4 2 Crss 100 1 10 100 0 0 40 80 120 160 QG , Total Gate Charge (nC) VDS, Drain-to-Source Voltage (V) Fig 5. Typical Capacitance Vs. Drain-to-Source ...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

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    HSMC[Hi-Sincerity Mocroelectronics]
Part No. HA3669
OCR Text ...rrent Gain & Collector Current 10000 1000 Spec. No. : HA200210 Issued Date : 2000.11.01 Revised Date : 2002.04.18 Page No. : 2/3 Saturation Voltage & Collector Current 125 C 1000 o VCE(sat) @ IC=20IB hFE 25 C 75 C o ...
Description NPN EPITAXIAL PLANAR TRANSISTOR

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    Hi-Sincerity Microelectronics
HSMC[Hi-Sincerity Mocroelectronics]
Part No. HA8550
OCR Text ... Gain & Collector Current 1000 10000 Spec. No. : HE6108 Issued Date : 1997.09.05 Revised Date : 2001.08.13 Page No. : 2/3 Saturation Voltage & Collector Current Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB 100 hFE 100 ...
Description PNP EPITAXIAL PLANAR TRANSISTOR

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    HITACHI[Hitachi Semiconductor]
Part No. HAT2052T
OCR Text ...verse Recovery Time trr (ns) 10000 3000 1000 100 50 Capacitance C (pF) 200 Ciss 300 Coss 100 Crss 30 10 20 10 5 0.1 di/dt = 20 A/s V GS = 0, Ta = 25C 0.2 0.5 1 2 Reverse Drain Current 5 I DR (A) 10 0 10 20 30 ...
Description Silicon N Channel Power MOS FET High Speed Power Switching

File Size 54.95K  /  9 Page

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    HAZ6000-SB HAZ10000-SB HAZ12000-SB HAZ14000-SB HAZ4000-SB HAZ4000-SB_07 HAZ20000-SB HAZ4000-SB07

LEM[LEM]
Part No. HAZ6000-SB HAZ10000-SB HAZ12000-SB HAZ14000-SB HAZ4000-SB HAZ4000-SB_07 HAZ20000-SB HAZ4000-SB07
OCR Text ...nt or AC peak IPN (A) 4000 6000 10000 12000 14000 20000 Primary current measuring range IPM (A) 4000 6000 10000 12000 14000 20000 Type RoHS since date code Features HAZ HAZ HAZ HAZ HAZ HAZ 4000-SB 6000-SB 10000-SB 12000-SB 14000-S...
Description Current Transducers

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    LEM[LEM]
Part No. HAZ6000-SRI HAZ10000-SRI HAZ14000-SRI HAZ20000-SRI HAZ4000-SRI
OCR Text ....m.s. current IPN (A) 4000 6000 10000 12000 14000 20000 Primary current measuring range IP (A) 4000 6000 10000 12000 14000 20000 Type HAZ HAZ HAZ HAZ HAZ HAZ 4000-SRI 6000-SRI 10000-SRI 12000-SRI 14000-SRI 20000-SRI Features ...
Description    Current Transducers

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    HSMC[Hi-Sincerity Mocroelectronics]
Part No. HBC848
OCR Text ... Voltage & Collector Current 10000 Current Gain-hFE 100 hFE @ VCE=5V Saturation Voltage (mV) 1000 VBE(sat) @ IC=20IB 10 VCE(sat) @ IC=20IB 100 1 0.1 1 10 100 1000 10 0.1 1 10 100 1000 Collector Current-IC...
Description NPN EPITAXIAL PLANAR TRANSISTOR

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    HSMC[Hi-Sincerity Mocroelectronics]
Part No. HBC858
OCR Text ...on Voltage & Collector Current 10000 1000 Saturation Voltage (mV) VCE=5V hFE VCE(sat) @ IC=20IB 100 100 10 10 0.1 1 10 100 1000 1 0.1 1 10 100 1000 Collector Current (mA) Collector Current (mA) Saturatio...
Description PNP EPITAXIAL PLANAR TRANSISTOR

File Size 29.22K  /  3 Page

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Part No. 2SC5706-TL
OCR Text ...2sa2039 / 2sc5706 no.6912-3/5 --10000 --1000 2 3 5 7 2 3 5 7 --100 2 3 5 7 --10 --0.01 --0.1 23 57 23 57 23 57 --1.0 --10 v ce (sat) -- i c collector current, i c -- a ta=75 c -- 25 c it02976 2sa2039 i c / i b =20 0.01 23 57 0.1 23 57...
Description 5000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR

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    WESTCODE SEMICONDUCTORS LTD
Part No. W5292TC500
OCR Text ...ient thermal impedance 100 1000 10000 00.511.522.5 maximum instantaneous forward voltage - v fm (v) instantaneous forward current - i fm (a) 160c 25c 0.00001 0.0001 0.001 0.01 0.1 0.0001 0.001 0.01 0.1 1 10 100 time (s) thermal impedance ...
Description 5292 A, 5000 V, SILICON, RECTIFIER DIODE

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