1.465-1.513 pdf Datasheet P1 Full Text Search --- IC-ON-LINE


	Part Number	Hot Search : 4A102 472E3 MAXQ1851 HV857DB1 AN1713 TFS300C A25L05P SC114
	Product Description
	Full Text Search

1.465-1.513 Datasheet PDF File

For 1.465-1.513 Found Datasheets File :: 158 Search Time::7.297ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20051
OCR Text	1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20051 is a class AB, NPN, common emitter RF power transistor intended for 26 Vdc operation from 1.465 to 1.513 GHz. Rated at 6 watts minimum output power, it may be used f...
Description	6 Watts, 1.465.513 GHz Cellular Radio RF Power Transistor 6 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
File Size	41.32K / 2 Page	View it Online	Download Datasheet

				Ericsson Microelectronics ERICSSON[Ericsson]
Part No.	PTB20141
OCR Text	1.465-1.513 GHz Cellular Radio RF Power Transistor Description The 20141 is a class AB, NPN, common emitter RF power transistor intended for 23 Vdc operation from 1.465 to 1.513 GHz. Rated at 18 watts minimum output power, it may be used ...
Description	18 Watts, 1.465.513 GHz Cellular Radio RF Power Transistor 18 Watts, 1.465-1.513 GHz Cellular Radio RF Power Transistor
File Size	41.29K / 2 Page	View it Online	Download Datasheet

				VISAY[Vishay Siliconix] Vishay Telefunken
Part No.	BFQ81
OCR Text	... figure D Low cross modulation 1 13 581-2 94 9280 2 3 BFQ81 Marking: RA Plastic case (SOT 23) 1 = Collector, 2 = Base, 3 = Emit...465 0.461 0.455 0.450 0.442 4634 0.414 0.403 S22 ANG deg -8.3 -18.6 -22.0 -23.7 -24.9 -26.6 -30.0 -3...
Description	From old datasheet system Silicon NPN Planar RF Transistor
File Size	149.29K / 10 Page	View it Online	Download Datasheet

				STMICROELECTRONICS[STMicroelectronics]
Part No.	LK115D00 LK115D20 LK115D25 LK115D30 LK115D33 LK115D40 LK115D47 LK115D48 LK115D50 LK115D55
OCR Text	...CK DIAGRAM September 1998 1/10 LK115D00 SERIES ABSOLUTE MAXIMUM RATINGS Symbol Vi Io Pt ot T stg To p DC Input Voltage Output C...465 20 Unit V V V mA mV mV mA mA A dB dB dB V V V V V V F 5/10 eN Vd V Hlc V Llc Output Noise ...
Description	VERY LOW DROP WITH INHIBIT VOLTAGE REGULATORS
File Size	81.74K / 10 Page	View it Online	Download Datasheet

				Agilent (Hewlett-Packard) ETC HP[Agilent(Hewlett-Packard)] Agilent Technologies, Inc.
Part No.	HBFP-0420-BLK HBFP-0420-TR1 HBFP-0420-TR2 HBFP0420
OCR Text	...25 GHz * Typical Performance at 1.8 GHz Associated Gain of 17 dB and Noise Figure of 1.1 dB at 2 V and 5 mA P1dB of 12 dBm at 2 V and 20 mA ...465 0.341 0.292 0.269 0.226 0.196 0.177 0.163 0.152 0.138 0.120 0.100 0.077 0.059 0.060 0.077 0.096 ...
Description	High Performance Isolated Collector Silicon Bipolar Transistor 高性能隔离采集硅双极晶体管
File Size	85.25K / 10 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10053
OCR Text	... large signal applications from 1.0 to 2.0 GHz. It operates at 40% efficiency with 12 dB typical gain. Nitride surface passivation and full ...465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/r...
Description	12 Watts/ 2.0 GHz GOLDMOS Field Effect Transistor 12 Watts, 2.0 GHz GOLDMOS Field Effect Transistor
File Size	79.85K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson] Ericsson Microelectronics
Part No.	PTF10139
OCR Text	...r (Watts) 50 40 30 20 10 0 0 1 2 3 4 A-1 234 561 199 101 e 39 Package 20251 VDD = 28 V IDQ = 500 mA f = 960 MHz 30 20 ...465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/r...
Description	60 Watts, 860-960 MHz GOLDMOS Field Effect Transistor 60瓦，860-960兆赫GOLDMOS场效应晶体管
File Size	114.14K / 6 Page	View it Online	Download Datasheet

				ERICSSON[Ericsson]
Part No.	PTF10195
OCR Text	... 140 120 100 80 60 40 20 0 0 1 2 3 4 5 6 Power Output Efficiency 40 Efficiency (%) 48 VDD = 28 V IDQ = 1.3 A f = 894 MHz 3...465-3667) United States +46 8 757 4700 International e-mail: rfpower@ericsson.com www.ericsson.com/r...
Description	125 Watts 869-894 MHz GOLDMOS Field Effect Transistor 125 Watts, 869-894 MHz GOLDMOS Field Effect Transistor
File Size	327.44K / 6 Page	View it Online	Download Datasheet

				MOTOROLA[Motorola, Inc] MOTOROLA[Motorola Inc]
Part No.	MMBR521LT1 MRF5211LT1
OCR Text	...11LT1) * Low Noise Figure @ f = 1.0 GHz -- NF(matched) = 2.5 dB (Typ) (MMBR521LT1) NF(matched) = 2.8 dB (Typ) (MRF5211LT1) * High Power Gain...465 0.532 0.589 S12 59 39 39 44 50 53 64 69 66 60 52 43 34 24 55 47 53 58 62 63 66 66 62 56 49 4...
Description	HIGH-FREQUENCY TRANSISTOR PNP SILICON
File Size	151.95K / 8 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC
Part No.	THN6301S
OCR Text	...TURES o Low Noise Figure N.F = 1.1dB TYP. @ f=1GHz, VCE=8V, Ic=5mA o High Gain MAG = 16.5dB TYP. @ f=1GHz, VCE=8V, Ic=15mA o High Transitio...465 / -151.502 0.459 / -164.677 0.459 / -174.570 0.461 / 177.870 0.470 / 170.614 0.480 / 164.637 0.4...
Description	NPN Planer RF TRANSISTOR
File Size	97.80K / 10 Page	View it Online	Download Datasheet

For 1.465-1.513 Found Datasheets File :: 158 Search Time::7.297ms
Page :: | <1> | 2 | 3 | 4 | 5 | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |