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For -m0 Found Datasheets File :: 3331 Search Time::0.796ms
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				Renesas
Part No.	RJL5032DPP-m0
OCR Text	m0 silicon n channel mos fet high speed power switching features ? low on-state resistance r ds(on) = 2.2 typ. (at i d = 1.5 a, v gs = 10 v, ta = 25 c) ? high speed switching ? built in fast recovery diode outline re...
Description	N-Channel Power MOSFET
File Size	152.04K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP63K2DPP-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.9 v typ ? high speed switching: t r = 60 ns typ...
Description	Silicon N Channel IGBT High Speed Power Switching
File Size	139.90K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP63K2DPP-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.9 v typ ? high speed switching: t r = 60 ns typ...
Description	N-Channel IGBT
File Size	200.65K / 7 Page	View it Online	Download Datasheet

				Renesas
Part No.	RJP63K2DPK-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.9 v typ ? high speed switching: t r = 60 ns typ...
Description	N-Channel IGBT
File Size	210.57K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJU60C6SDPK-m0
OCR Text	m0 single diode fast recovery diode features ? fast reverse recovery time: t rr = 100 ns typ. (at i f = 30 a, di/dt = ? 100 a/ s) ? low forward voltage: v f = 1.4 v typ. (at i f = 50 a) ? low reverse current: i r = 1 a...
Description	Single Diode Fast Recovery Diode
File Size	74.21K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJU6054SDPK-m0
OCR Text	m0 single diode ultra fast recovery diode features ? ultra fast reverse recovery time: t rr = 25 ns typ. (at i f = 30 a, di/dt = 100 a/ s) ? low forward voltage: v f = 2.5 v typ. (at i f = 30 a) ? low reverse current: i r ...
Description	Single Diode Ultra Fast Recovery Diode
File Size	74.45K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJU36B2WDPK-m0
OCR Text	m0 dual diode ultra fast recovery diode features ? ultra fast reverse recovery time: t rr = 40 ns typ. (at i f = 20 a, di/dt = 100 a/ ? s) ? low forward voltage: v f = 1.1 v typ. (at i f = 20 a) ? low reverse current: i r =...
Description	Dual Diode Ultra Fast Recovery Diode
File Size	50.37K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJU36B1WDPK-m0
OCR Text	m0 dual diode ultra fast recovery diode features ? ultra fast reverse recovery time: t rr = 40 ns typ. (at i f = 10 a, di/dt = 100 a/ ? s) ? low forward voltage: v f = 1.1 v typ. (at i f = 10 a) ? low reverse current: i r =...
Description	Dual Diode Ultra Fast Recovery Diode
File Size	50.61K / 4 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJP63K2DPK-m0
OCR Text	m0 silicon n channel igbt high speed power switching features ? trench gate and thin wafer technology (g6h-ii series) ? low collector to emitter saturation voltage: v ce(sat) = 1.9 v typ ? high speed switching: t r = 60 ns typ...
Description	Silicon N Channel IGBT High speed power switching
File Size	149.82K / 7 Page	View it Online	Download Datasheet

				Renesas Electronics Corporation
Part No.	RJK60S8DPK-m0 RJK60S8DPK-m0-T0
OCR Text	m0 600v - 110a - sj mos fet high speed power switching features ? superjunction mosfet ? low on-resistance r ds(on) = 0.045 ? typ. (at i d = 27.5 a, v gs = 10 v, ta = 25 ? c) ? high speed switching tf = 42 ns typ. (at ...
Description	600V - 110A - SJ MOS FET High Speed Power Switching
File Size	73.23K / 7 Page	View it Online	Download Datasheet

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