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  -55 Datasheet PDF File

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    BUK7606-55 BUK7606-55A

Philips Semiconductors
3M Company
Part No. BUK7606-55 BUK7606-55A
OCR Text ...elope v ds drain-source voltage 55 v suitable for surface mounting. using i d drain current (dc) 75 a ' trench ' technology the device p tot total power dissipation 230 w features very low on-state t j junction temperature 175 ?c resistance...
Description TrenchMOS(TM)transistor Standard level FET(TrenchMOS(TM)晶体管标准电平FET)
Aluminum Snap-In Capacitor; Capacitance: 2200uF; Voltage: 50V; Case Size: 22x25 mm; Packaging: Bulk
TrenchMOSTM)transistor Standard level FET(TrenchMOSTM)晶体管标准电平FET) TrenchMOS(商标)一级标准场效应晶体管(TrenchMOS(商标)晶体管标准电平场效应管)

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    BUK9606-55 BUK9606-55A

Philips Semiconductors
NXP Semiconductors N.V.
Part No. BUK9606-55 BUK9606-55A
OCR Text ...rface v ds drain-source voltage 55 v mounting. using ' trench ' technology i d drain current (dc) 75 a the device features very low on-state p tot total power dissipation 230 w resistance. it is intended for use in t j junction temperature ...
Description TrenchMOS(TM)transistor Logic level FET(TrenchMOS(TM)晶体管逻辑电平FET)
TrenchMOS transistor Logic level FET
TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)

File Size 70.16K  /  7 Page

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    BUK9635-55 BUK9635-56

NXP Semiconductors N.V.
PHILIPS[Philips Semiconductors]
Part No. BUK9635-55 BUK9635-56
OCR Text ...tching applications. BUK9635-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 34 8...
Description TrenchMOSTM)transistor Logic level FET(TrenchMOSTM)晶体管逻辑电平FET)
TrenchMOS transistor Logic level FET

File Size 68.83K  /  8 Page

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    BUK9614-55

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. BUK9614-55
OCR Text ...tching applications. BUK9614-55 QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance VGS = 5 V MAX. 55 68 1...
Description TrenchMOS transistor Logic level FET

File Size 51.52K  /  8 Page

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    Winbond Electronics Corp
Part No. W49F201T-55 W49F201T-45 W49F201T-55B W49F201T-45B W49F201S-45B W49F201S-55 W49F201S-55B
OCR Text ...yp.) fast read access time: 45/55 ns endurance: 1k/10k cycles (typ.) ten-year data retention hardware data protection sector configuration - one 8k words boot block with lockout protection - two 8k words parameter blocks - one 10...
Description 128K X 16 CMOS FLASH MEMORY
5015 RR 5#16S SKT RECP
5015 RR 5#12 PIN RECP

File Size 268.69K  /  23 Page

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    Winbond Electronics
Part No. W49F201S-55 W49F201S-55B W49F201T-45 W49F201T-45B W49F201T-55 W49F201T-55B W49F201S-45 W49F201S-45B
OCR Text ...yp.) fast read access time: 45/55 ns endurance: 1k/10k cycles (typ.) ten-year data retention hardware data protection sector configuration - one 8k words boot block with lockout protection - two 8k words parameter blocks - one 10...
Description 128K X 16 CMOS FLASH MEMORY

File Size 258.67K  /  23 Page

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    AM29F200BT-55 AM29F200BB-45 AM29F200BB-120 AM29F200BB-50 AM29F200BT-50 AM29F200BT-45 AM29F200BT-120 AM29F200BB-90 AM29F2

http://
AMD
Advanced Micro Devices, Inc.
Part No. AM29F200BT-55 AM29F200BB-45 AM29F200BB-120 AM29F200BB-50 AM29F200BT-50 AM29F200BT-45 AM29F200BT-120 AM29F200BB-90 AM29F200BB-70 AM29F200BT-90
OCR Text ... offers access times of 45, 50, 55, 70, 90, and 120 ns, allowing operation of high-speed microprocessors without wait states. to eliminate bus contention the device has separate chip enable (ce#), write enable (we#) and output enable (oe#) ...
Description 2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only/ Boot Sector Flash Memory
2 Megabit (256 K x 8-Bit/128 K x 16-Bit) CMOS 5.0 Volt-only, Boot Sector Flash Memory

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    Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY57V643220DLT-55 HY57V643220DTP-45 HY57V643220DT-45 HY57V643220DTP-7 HY57V643220DT-5 HY57V643220DTP-5 HY57V643220DT-6 HY57V643220DT-7 HY57V643220DTP-6 HY57V643220DSTP-45 HY57V643220DLTP-45 HY57V643220DLTP-55 HY57V643220DSTP-55 HY57V643220DLT-45
OCR Text ...-5 200mhz hy57v643220d(l/s)t(p)-55 183mhz hy57v643220d(l/s)t(p)-6 166mhz hy57v643220d(l/s)t(p)-7 143mhz ? voltage : vdd, vddq 3.3v supply voltage ? all device pins are compatible with lvttl interface ? jedec standard 400mil 86pin tsop-ii w...
Description 4Banks x 512K x 32bits Synchronous DRAM 2M X 32 SYNCHRONOUS DRAM, 4.5 ns, PDSO86

File Size 217.69K  /  13 Page

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    Fujitsu Microelectronics
Part No. MBM29LV001BC-55 MBM29LV001BC-55PD MBM29LV001BC-55PFTN MBM29LV001BC-55PFTR MBM29LV001TC-70PD MBM29LV001TC-70PFTR MBM29LV001TC-55 MBM29LV001TC-55PFTN MBM29LV001TC-55PFTR MBM29LV001TC-70PFTN MBM29LV001TC-55PD MBM29LV001BC-70 MBM29LV001BC-70PD MBM29LV001BC-70PFTN MBM29LV001BC-70PFTR
OCR Text 55/-70 /mbm29lv001bc -55/-70 n features ? single 3.0 v read, program, and erase minimizes system level power requirements ? compatible with jedec-standard commands uses same software commands as e 2 proms ? compatible with jedec-standard wo...
Description FLASH MEMORY 1M (128K x 8) BIT

File Size 269.33K  /  49 Page

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    STC62WV1024BSTC-55 STC62WV1024BSTC-70

ETC
Part No. STC62WV1024BSTC-55 STC62WV1024BSTC-70
OCR Text ...ent * High speed access time : -55 55ns -70 70ns * Automatic power down when chip is deselected * Easy expansion with CE2, CE1, and OE options * Three state outputs and TTL compatible * Fully static operation * Data retention supply volt...
Description VERY LOW POWER VOLTAGE CMOS SRAM

File Size 325.68K  /  9 Page

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