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For foward Found Datasheets File :: 1163    Search Time::1.344ms    
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    DFM600BXS17-A000

Dynex Semiconductor
Part No. DFM600BXS17-A000
OCR Text ... 100 1400 Diode 1200 foward current, F - (A) I Tj = 25 uC Transient thermal impedance,th (j-c) - ( Z C/kW ) 1000 Tj = 125 uC 10 800 600 1 400 200 Diode Ri (uC/KW) i (ms) 1 1.14 0.10 2 6.32 3...
Description Fast Recovery Diode Module

File Size 219.41K  /  7 Page

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    SI5856DC-T1 SI5856DC-T1-E3 SI5856DC08

Vishay Siliconix
Part No. SI5856DC-T1 SI5856DC-T1-E3 SI5856DC08
OCR Text ...SFET Diode Conduction)a Average foward Current (Schottky) Pulsed foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations ...
Description N-Channel 1.8-V (G-S) MOSFET With Schottky Diode

File Size 107.73K  /  7 Page

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    SI3812DV SI3812DV-T1 SI3812DV08

Vishay Siliconix
Part No. SI3812DV SI3812DV-T1 SI3812DV08
OCR Text ...SFET Diode Conduction)a Average foward Current (Schottky) Pulsed foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Notes a. Surface Mounted o...
Description    N-Channel 20-V (D-S) MOSFET With Schottky Diode

File Size 108.31K  /  7 Page

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    RB160M-30

Rohm CO.,LTD.
Part No. RB160M-30
OCR Text ...cteristics AVERAGE RECTIFIED foward CURRENT : IO (A) 2.0 1.8 1.6 1.4 1.2 1.0 Sin (=180) D=1 / 2 DC 0A 0V t T AVERAGE RECTIFIED foward CURRENT : IO (A) 2.0 1.8 1.6 1.4 DC 100 Ta=25C IO VR D=t / T VR=15V Tj=125C 8.3m...
Description DIODE

File Size 98.27K  /  3 Page

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    RB160M-40

Rohm CO.,LTD.
ROHM[Rohm]
Part No. RB160M-40
OCR Text ...cteristics AVERAGE RECTIFIED foward CURRENT : IO (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0A 0V t T AVERAGE RECTIFIED foward CURRENT : IO (A) 2.0 10 9 DC C=200pF / R=0 DC D=1 / 2 Sin (=180) 8 7 1.5 D=...
Description Schottky barrier diode

File Size 45.05K  /  3 Page

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    RB160M-60

Rohm CO.,LTD.
ROHM[Rohm]
Part No. RB160M-60
OCR Text ...cteristics AVERAGE RECTIFIED foward CURRENT : IO (A) 4.0 0A IO VR t T AVERAGE RECTIFIED foward CURRENT : IO (A) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0A 0V t T 3.5 3.0 2.5 2.0 D=1 / 2 DC 0V DC D=t / T VR...
Description Shottky barrier diode

File Size 28.87K  /  3 Page

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    SI4832DY SI4832DY-T1

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Vishay Siliconix
Part No. SI4832DY SI4832DY-T1
OCR Text ...T Diode Conduction)a, b Average foward Current (Schottky) Pulsed foward Current (Schottky) Maximum Power Dissipation (MOSFET)a b Maximum Power Dissipation (Schottky)a, b Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C T...
Description N-Channel 30-V (D-S) MOSFET with Schottky Diode

File Size 44.73K  /  5 Page

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    2SD1259 2SD1259A

PANASONIC[Panasonic Semiconductor]
Part No. 2SD1259 2SD1259A
OCR Text ....1 s Features q q q High foward current transfer ratio hFE Satisfactory linearity of foward current transfer ratio hFE N type package enabling direct soldering of the radiating fin to the printed circuit board, etc. of small electron...
Description Silicon NPN triple diffusion planar type

File Size 47.16K  /  2 Page

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    SI5855DC04

Vishay Siliconix
Part No. SI5855DC04
OCR Text ...SFET Diode Conduction)a Average foward Current (Schottky) Pulsed foward Current (Schottky) Maximum Power Dissipation (MOSFET)a Maximum Power Dissipation (Schottky)a Operating Junction and Storage Temperature Range Soldering Recommendations ...
Description P-Channel 1.8-V (G-S) MOSFET With Schottky Diode

File Size 97.67K  /  7 Page

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