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  1.465-1.513 Datasheet PDF File

For 1.465-1.513 Found Datasheets File :: 145    Search Time::2.766ms    
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    SANYO
Part No. SBFP420D
OCR Text ...ions * * * Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2215 : fT=25GHz typ (VCE=3V)...465 2.054 2.094 1.917 1.933 1.770 1.685 1.648 1.543 1.543 1.461 1.409 1.374 1.309 1.281 1.236 1.191 ...
Description UHF to C Band Low Noise Amplifier, Oscillation Applications

File Size 51.73K  /  13 Page

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    SBFP420D ENN7435

Sanyo Semicon Device
Part No. SBFP420D ENN7435
OCR Text ...ions * * * Low noise : NF=1.1dB typ (f=1.8GHz). unit : mm High cut-off frequency : fT=20GHz typ (VCE=1V). 2215 : fT=25GHz typ (VCE=3V)...465 2.054 2.094 1.917 1.933 1.770 1.685 1.648 1.543 1.543 1.461 1.409 1.374 1.309 1.281 1.236 1.191 ...
Description Ultrahigh-Frequency Transistors
UHF to C Band Low Noise Amplifier, Oscillation Applications

File Size 45.20K  /  12 Page

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    EB1500DFN-AJ FPD1500DFN1

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Filtronic Compound Semiconductors
Part No. EB1500DFN-AJ FPD1500DFN1
OCR Text ...) 18 dB Small-Signal Gain (SSG) 1.2 dB Noise Figure 42 dBm Output IP3 45% Power-Added Efficiency Datasheet v3.0 PACKAGE: RoHS FPD1...465 750 400 1 0.7 12 12 0.9 16 16 15 1.3 550 dBm Saturated Drain-Source Current Maximum Drain-...
Description LOW NOISE HIGH LINEARITY PACKAGED PHEMT

File Size 323.07K  /  10 Page

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    MRF7S19210HR3 MRF7S19210HSR3

Freescale Semiconductor, Inc
Part No. MRF7S19210HR3 MRF7S19210HSR3
OCR Text ...Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on...465 - 06, STYLE 1 NI - 780 MRF7S19210HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S19210HSR3 Tabl...
Description RF Power Field Effect Transistors

File Size 499.80K  /  16 Page

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    UTC[Unisonic Technologies]
Part No. UTCUT10XX UT10XX UT10XX-B UT10XX-C UTCUT1018 UTCUT1020 UTCUT1025 UTCUT1027 UTCUT1028 UTCUT1030 UTCUT1033 UTCUT1036 UTCUT1044 UTCUT1050 UTCUT1070
OCR Text ...ed output voltages ranging from 1.5V~7.0V. The advantage of CMOS technology is low voltage dropout and low quiescent current. Although desig...465 100 6.0 UNIT V mA mV mV A %/V VIN=5.5V VIN=5.5V,1mAIOUT30mA IOUT=1mA VIN=5.5V,No load 4.5...
Description CMOS

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    NEC, Corp.
Part No. 2SC4185 2SC4185U22
OCR Text ... applications. 2.0 0.2 0.3 +0.1 -0 0.65 0.65 2 PACKAGE DIMENSIONS in millimeters 2.1 0.1 1.25 0.1 FEATURES * Low Noise * High ...465 0.485 0.504 0.513 0.529 S11 ANG -77.8 -116.4 -138.7 -153.1 -163.7 -173.0 178.8 173.6 169.6 165.3...
Description TRANSISTOR | BJT | NPN | 14V V(BR)CEO | 50MA I(C) | SOT-323 晶体管|晶体管|叩| 14V的五(巴西)总裁| 50mA的一(c)|的SOT - 323
UHF OSCILLATOR AND VHF MIXER NPN SILICON EPITAXIAL TRANSISTOR SUPER MINI MOLD

File Size 43.38K  /  6 Page

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    FSU02LG

Eudyna Devices Inc
Part No. FSU02LG
OCR Text ...p.)@2GHz * Low Noise Figure: NF=1.5dB (Typ.)@f=2GHz * Low Bias Conditions: VDS=3V, 20mA * Cost Effective Hermetic Microstrip Package * Tape ...465 .453 .452 .448 .443 .438 .433 ANG -9.4 -14.4 -19.2 -23.6 -27.8 -31.7 -36.5 -39.3 -42.9 -46.3...
Description GENERAL PURPOSE GAAS FET

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    15GN03NA

Sanyo Semicon Device
Part No. 15GN03NA
OCR Text ...* High cutoff frequency : fT=1.5GHz typ. High gain : S21e2=11.5dB typ (f=0.4GHz). Specifications Absolute Maximum Ratings at Ta=25C ...465 S11 --98.93 --145.70 --176.64 160.88 143.46 129.85 118.38 108.55 100.12 92.70 S21 12.653 7.004 4...
Description VHF High-frequency Amplifier Applications

File Size 47.50K  /  6 Page

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    MRF7S21210HR3 MRF7S21210HSR3

Freescale Semiconductor, Inc
Part No. MRF7S21210HR3 MRF7S21210HSR3
OCR Text 1, 1/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station application...465 - 06, STYLE 1 NI - 780 MRF7S21210HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S21210HSR3 Tabl...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

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    MRF7S21150HR3 MRF7S21150HR309 MRF7S21150HSR3

Freescale Semiconductor, Inc
Part No. MRF7S21150HR3 MRF7S21150HR309 MRF7S21150HSR3
OCR Text 1, 4/2009 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs Designed for CDMA base station application...465- 06, STYLE 1 NI - 780 MRF7S21150HR3 CASE 465A - 06, STYLE 1 NI - 780S MRF7S21150HSR3 Table...
Description RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

File Size 436.34K  /  13 Page

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