350-400v pdf Datasheet P8 Full Text Search --- IC-ON-LINE


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350-400v Datasheet PDF File

For 350-400v Found Datasheets File :: 2512 Search Time::1.687ms
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				International Rectifier
Part No.	IRHNJ7430SE
OCR Text	...=-20V 43 375 375 375 375 375 39 350 350 350 325 300 400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 Cu Br Fig a. Single Event Effect, Safe ...400V VDS = 250V VDS = 100V 600 Ciss 12 8 300 C oss C rss 4 0 1 10 100 0 ...
Description	500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-0.5 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
File Size	119.21K / 8 Page	View it Online	Download Datasheet

				UTC[Unisonic Technologies]
Part No.	MMBTA45-AE3-R MMBTA45L-AE3-R MMBTA44 MMBTA44-AE3-R MMBTA44L-AE3-R MMBTA45
OCR Text	... TJ TSTG RATINGS 500 400 400 350 6 300 350 1.5 +150 -40 ~ +150 UNIT V V V mA mW W C C ELECTRICAL CHARACTERISTICS (Tj =25C, unless o...400V, IE =0 VCB=320V, IE =0 VCE =400V, IB=0 VCE =320V, IB=0 VEB=4V, Ic=0 VCE =10V, Ic=1mA VCE =10V, ...
Description	HIGH VOLTAGE TRANSISTOR NPN EPITAXIAL SILICON TRANSISTOR
File Size	74.62K / 5 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGSL4B60K IRGB4B60K IRGS4B60K
OCR Text	...irf.com 5 IRGB/S/SL4B60K 350 300 Swiching Time (ns) 1000 250 Energy (J) EON 100 td OFF tF tdON 10 200 150 100 50 0 1...400V, RG= 100; VGE= 15V Fig. 13 - Typ. Switching Time vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 10...
Description	600V Low VCEon Copack IGBT in a TO-262 package 600V Low VCEon Copack IGBT in a D2Pak package 600V Low VCEon Copack IGBT in a TO-220 package INSULATED GATE BIPOLAR TRANSISTOR
File Size	292.61K / 13 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGSL4B60KD1 IRGS4B60KD1 IRGB4B60KD1
OCR Text	...f.com 5 IRGB/S/SL4B60KD1 350 300 Swiching Time (ns) 1000 250 Energy (J) EON 100 td OFF tF tdON 10 200 150 100 50 0 1...400V, RG= 100; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 10...
Description	600V Low-Vceon Non Punch Through Copack IGBT in a TO-262 package 600V Low-Vceon Non Punch Through Copack IGBT in a D2-Pak package 600V Low-Vceon Non Punch Through Copack IGBT in a TO-220 FullPak package INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	373.85K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHF7430SE JANSR2N7464T2
OCR Text	...-5V @VGS=-10V 43 375 375 375 39 350 350 350 @VGS=-15V 375 325 @VGS=-20V 375 300 400 300 VDS 200 100 0 0 -5 -10 VGS -15 -20 Cu Br Fig a...400V VDS = 250V VDS = 100V C, Capacitance (pF) 750 Ciss 12 500 Coss Crss 8 2...
Description	RADIATION HARDENED POWER MOSFET THRU-HOLE (TO-39)
File Size	186.39K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRGB4B60KD1PBF IRGSL4B60KD1 IRGS4B60KD1
OCR Text	...GB4B60KD1PbF, IRGS/SL4B60KD1 350 300 Swiching Time (ns) 1000 250 Energy (J) EON td OFF 100 tF tdON 200 150 100 50 0 ...400V, RG= 100; VGE= 15V Fig. 14 - Typ. Switching Time vs. IC TJ = 150C; L=2.5mH; VCE= 400V RG= 10...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	431.57K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRHNB7460SE
OCR Text	... @V/5=0V @V/5=-5V 43 375 375 39 350 350 42 375 V,5 (V) @V/5=-10V @V/5=-15V @V/5=-20V 375 375 375 350 325 300 400 300 VDS 200 100 0 0 ...400V VDS = 250V VDS = 100V 16 C, Capacitance (pF) 6000 Ciss 4000 12 Coss Crss ...
Description	500V 100kRad Hi-Rel Single N-Channel SEE Hardened MOSFET in a SMD-3 package RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-3)
File Size	240.33K / 8 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGB4060DPBF
OCR Text	...00 Swiching Time (ns) 1000 350 Energy (J) 100 tdOFF tF tdON 300 250 200 150 100 50 0 0 EOFF EON 10 tR 1 5 1...400V, RG = 47; VGE = 15V. 350 300 250 1000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L=1mH...
Description	INSULATED GATE BIPOLAR TRANSISTOR
File Size	320.64K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRGB4060DPBF
OCR Text	...00 Swiching Time (ns) 1000 350 Energy (J) 100 tdOFF tF tdON 300 250 200 150 100 50 0 0 EOFF EON 10 tR 1 5 1...400V, RG = 47; VGE = 15V. 350 300 250 1000 Fig. 14 - Typ. Switching Time vs. IC TJ = 175C; L=1mH...
Description	INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
File Size	287.68K / 10 Page	View it Online	Download Datasheet

				Vishay Siliconix
Part No.	SD300C04C12
OCR Text	...180 0 50 10 0 15 0 200 25 0 300 350 40 0 4 50 30 60 90 120 180 average forward current (a) maximum allow able heatsink temperature (c) co...400v to 20 00v ) 20 40 60 80 100 120 140 160 180 0 10 0 20 0 3 00 40 0 50 0 600 70 0 30 60 90 180 d...
Description	Standard Recovery Diodes (Hockey PUK Version), 650 A
File Size	147.47K / 7 Page	View it Online	Download Datasheet

For 350-400v Found Datasheets File :: 2512 Search Time::1.687ms
Page :: | 1 | 2 | 3 | 4 | 5 | 6 | 7 | <8> | 9 | 10 | 11 | 12 | 13 | 14 | 15 |