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  80ns--high Datasheet PDF File

For 80ns--high Found Datasheets File :: 706    Search Time::1.703ms    
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    Samsung Electronics
Part No. K8A5615EBA
OCR Text ...A56156ET(B)A-DE7C tAA : 70ns--->80ns tCE : 70ns--->80ns - Support accelerated quad word program operation Revision - Add the operation flow ...High Voltage Gen. 3 Revision 1.0 December, 2004 www.DataSheet4U.com K8A5615ET(B)A ORDE...
Description Flash Memory

File Size 758.68K  /  60 Page

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    MT28F004B3 MT28F400B3SG-8B MT28F400B3SG-8T MT28F004B3SG-8B MT28F004B3SG-8T MT28F400B3WG-8B MT28F004B3VG-8B MT28F004B3VG-

MICRON[Micron Technology]
Part No. MT28F004B3 MT28F400B3SG-8B MT28F400B3SG-8T MT28F004B3SG-8B MT28F004B3SG-8T MT28F400B3WG-8B MT28F004B3VG-8B MT28F004B3VG-8T MT28F004B3WG-8B MT28F004B3WG-8T MT28F400B3 MT28F400B3VG-8B MT28F400B3VG-8T
OCR Text ... process * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Auto...HIGH in addition to executing the normal write or erase sequences. This block may be used to store c...
Description FLASH MEMORY

File Size 398.26K  /  30 Page

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    MT28F004B5-1

MICRON[Micron Technology]
Part No. MT28F004B5-1
OCR Text ...5 device * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Inputs and outputs are fully TTL-compatible * Auto...HIGH in addition to executing the normal write or erase sequences. This block may be used to store c...
Description FLASH MEMORY

File Size 411.66K  /  32 Page

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    Excel Semiconductor
Part No. ES29LV160D
OCR Text ...vcc range ( 2.7v - 3.6v ) - 80ns for regulated vcc range ( 3.0v - 3.6v ) ? program and erase time - program time : 5us/byte, 7us/wor...high-voltage method for prom programmers ? temporary sector un protection ( reset# ) - allows tem...
Description 16Mbit CMOS

File Size 644.38K  /  57 Page

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    MT28F008B5 MT28F800B5

MICRON[Micron Technology]
Part No. MT28F008B5 MT28F800B5
OCR Text ...5 device * Address access time: 80ns * 100,000 ERASE cycles * Industry-standard pinouts * Automated write and erase algorithm * Two-cycle WR...HIGH if VPP = VPPH (5V) and RP# = VIH during a WRITE or ERASE. Does not affect WRITE or ERASE operat...
Description FLASH MEMORY

File Size 326.27K  /  30 Page

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    HMF1M32M2VB-120 HMF1M32F2VB-70 HMF1M32M2VB-90 HMF1M32M2VB-80

Hanbit Electronics Co.,Ltd
Part No. HMF1M32M2VB-120 HMF1M32F2VB-70 HMF1M32M2VB-90 HMF1M32M2VB-80
OCR Text ...1 OPTIONS w Timing 70ns access 80ns access 90ns access 120ns access w Packages 80-pin SMM F -70 -80 -90 -120 MARKING PIN ASSIGNMENT P2 ...High-density 4MByte design w High-reliability, low-power design w Single + 3.0V 0.5V power supply w...
Description Flash-ROM Module 4MByte (1Mx32Bit), 80Pin-SMM, 3.3V Design

File Size 412.42K  /  12 Page

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    IR11682STRPBF IR11682SPBF IR11682S11

International Rectifier
Part No. IR11682STRPBF IR11682SPBF IR11682S11
OCR Text ... 10.7v gate drive clamp 80ns turn-off propagation delay wide vcc operating range direct sensing for both synchronous rectifi...high voltage v gth 8.5 10.7 13.5 v v cc =12v-18v (internally clamped) rise time t r1 ...
Description DUAL SmartRectifier DRIVER IC 200V proprietary IC technology

File Size 377.69K  /  22 Page

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    SMJ44400HR SMJ44400JD

ETC
Part No. SMJ44400HR SMJ44400JD
OCR Text ...76 x 4 options marking ? timing 80ns access -80 100ns access -10 120ns access -12 ? package(s) ceramic dip (400mils) jd no. 113 ceramic flat...high performance, reliability, and low-power operation. the smj44400 features maximum row acces...
Description 1M x 4 DRAM DYNAMIC RANDOM-ACCESS MEMORY

File Size 354.40K  /  21 Page

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